The invention relates to a method for producing a sample on an object using a material processing device. The invention further relates to a computer program product and a material processing device for carrying out the method. The method comprises guiding a light beam over a surface of the object in a first direction along a first line, with material of the object being ablated when the light beam is guided over the surface of the object, changing the first direction into a second direction, guiding the light beam over the surface of the object in the second direction along a second line, with material of the object being ablated when the light beam is guided over the surface of the object along the second line, wherein the light beam is provided in pulsed fashion and is guided onto the surface of the object in such a way that the light beam ablates material from the object in a first operational state of the light beam device and that the light beam is not guided onto the object in a second operational state, and wherein the sample is produced in the first operational state by ablating material from the object.

A computer-implemented method of generating scan instructions for forming a product using additive layer manufacture as a series of layers is provided. The method comprises determining a beam acceleration voltage to be used when forming the product; for each hatch area of layers of the product, determining a respective beam current to be used when forming the hatch area and providing a respective beam current value to the hatch area description in the scan pattern instruction file; and for each line of each hatch area, determining a respective beam spot size to be used when scanning the beam along the line and providing a respective beam spot size value to the line description in the scan pattern instruction file, and determining a respective series of beam step sizes and beam step dwell times to be used when scanning the beam along the line, and providing a respective series of beam position values and beam step dwell times to the line description in the scan pattern instruction file thereby defining how the beam is to be scanned along the line. Also provided are a file of scan instructions, an additive layer manufacture apparatus, and a method of forming a product using the additive layer manufacturing apparatus.

A system and method for manufacturing a lattice structure of ionized particles on a substrate, wherein the process may be improved by controlling the number of ionized particles that are ejected from an ionizer and directed to a substrate, and wherein the ionized particles are disposed on the substrate, thereby enabling the creation of a lattice structure that may be as thin as a single layer of ionized particles.

A gas feed device is operated, including displaying a functional parameter of the gas feed device. A gas feed device may carry out the operation, and a particle beam apparatus may include the gas feed device. A method may include predetermining and/or measuring a current temperature of a precursor reservoir of the gas feed device using a temperature measuring unit, where the precursor reservoir contains a precursor to be fed onto an object, loading a flow rate of the precursor through an outlet of the precursor reservoir from a database into a control unit, said flow rate being associated with the current temperature of the precursor reservoir, and (i) displaying the flow rate on the display unit and/or (ii) determining the functional parameter of the precursor reservoir depending on the flow rate using the control unit and informing a user of the gas feed device about the determined functional parameter.

Methods include directing a group of ions through a separation region of an ion manipulation apparatus, separating the group of ions in the separation region based on ion mobility, selecting a subset of the group of ions based on a dependence between ion mobility and ion arrival time of the separated ions at a deposition switch of the ion manipulation apparatus, and depositing the selected subset of ions on a substrate. Related systems and ion manipulation apparatus are disclosed. Also disclosed are methods and system that provide concurrent ion accumulation and ion separation in coupled and switchable electrode regions using traveling wave electric fields.

A metal pattern inspection method which applies a pulsed voltage to a metallic pattern, sets a cycle of the pulsed voltage to be shorter than a scanning cycle in which a focused ion beam is swept, indicating only a region of a secondary charged particle image corresponding to a portion of the metallic pattern which is isolated by a wire breakage and to which the pulsed voltage is applied in the form of a first pattern created as a function of surface electrical potentials changing in level with time, detecting, as a disconnection, a boundary between the first pattern and a second pattern created as a function of surface electrical potentials not changing in level with time, and determining whether there is a breaking of or a short circuit in the metallic pattern based on the presence or absence of the disconnection.

The present invention pertains to methods, apparatuses and computer programs for processing an object for lithography. A method for processing an object for lithography comprises: (a) providing a first gas; (b) providing a second gas, the second gas including second molecules capable of performing an inversion oscillation; (c) providing a particle beam in a working region of the object for production of a deposition material in the working region based at least partly on the first gas and the second gas. The second gas is provided with a gas flow rate of less than 5 sccm, preferably less than 2 sccm, more preferably less than 0.5 sccm.

A structure for performing analysis includes a first opening formed on a back side of a substrate and passing through the substrate, a second opening connected with a bottom of the first opening and penetrating into a first dielectric layer formed on a front side of the substrate, a first conductive layer formed on a sidewall of the second opening and a contact element in the first dielectric layer, and a second conductive layer formed on a second dielectric layer. The first conductive layer contacts the second conductive layer electrically.

A method for preparing a sample for transmission electron microscopy (TEM) comprises providing a substrate having a patterned area on its surface that is defined by a particular topography. A conformal layer of contrasting material is deposited on the topography by depositing a layer of the contrasting material on a local target area of the substrate, spaced apart from the patterned area via Electron Beam Induced Deposition (EBID). The deposition parameters, the thickness of the layer deposited in the target area, and the distance of the target area to the patterned area are selected so that a conformal layer of the contrasting material is formed on the topography of the patterned area. A protective layer is subsequently deposited. The protective layer does not damage the topography in the patterned area because the patterned area is protected by the conformal layer.

Methods and systems for direct lithographic pattern definition based upon electron beam induced alteration of the surface chemistry of a substrate are described. The methods involve an initial chemical treatment for global definition of a specified surface chemistry (SC). Electron beam induced surface reactions between a gaseous precursor and the surface are then used to locally alter the SC. High resolution patterning of stable, specified surface chemistries upon a substrate can thus be achieved. The defined patterns can then be utilized for selective material deposition via methods which exploit the specificity of certain SC combinations or by differences in surface energy. It is possible to perform all steps in-situ without breaking vacuum.