The present invention provides a system that includes a glow discharge cell and a plasma arc torch. A first valve is connected to a wastewater source. An eductor has a first inlet, a second inlet and an outlet, wherein the first inlet is connected to the outlet of the electrically conductive cylindrical vessel, the second inlet is connected to the first valve, and the outlet is connected to the tangential inlet of the plasma arc torch. A second valve is connected between the tangential outlet of the plasma arc torch and the inlet of the glow discharge cell, such that the plasma arc torch provides the electrically conductive fluid to the glow discharge cell and the glow discharge cell provides a treated water via the outlet centered in the closed second end.

Embodiments of the present technology may include a method of processing a semiconductor substrate. The method may include providing the semiconductor substrate in a processing region. Additionally, the method may include flowing gas through a cavity defined by a powered electrode. The method may further include applying a negative voltage to the powered electrode. Also, the method may include striking a hollow cathode discharge in the cavity to form hollow cathode discharge effluents from the gas. The hollow cathode discharge effluents may then be flowed to the processing region through a plurality of apertures defined by electrically grounded electrode. The method may then include reacting the hollow cathode discharge effluents with the semiconductor substrate in the processing region.

The present invention provides a glow discharge assembly that includes an electrically conductive cylindrical screen, a flange assembly, an electrode, an insulator and a non-conductive granular material. The electrically conductive cylindrical screen has an open end and a closed end. The flange assembly is attached to and electrically connected to the open end of the electrically conductive cylindrical screen. The flange assembly has a hole with a first diameter aligned with a longitudinal axis of the electrically conductive cylindrical screen. The electrode is aligned with the longitudinal axis of the electrically conductive cylindrical screen and extends through the hole of the flange assembly into the electrically conductive cylindrical screen. The insulator seals the hole of the flange assembly around the electrode and maintains a substantially equidistant gap between the electrically conductive cylindrical screen and the electrode. The non-conductive granular material is disposed within the substantially equidistant gap.

A magnetic resonance apparatus comprising: a magnetic system configured to provide a magnetic field throughout at least a portion of a cavity, the magnetic field based on magnetic-system-control-data; a transmitter antenna disposed at least partly within the cavity and configured to transmit radio-frequency-transmitted-signalling based on transmitter-control-data; and a receiver antenna disposed at least partly within the cavity and configured to receive radio-frequency-received-signalling representative of magnetic resonance interactions of at least one object, disposed within the portion of the cavity, with the magnetic field and the radio-frequency-transmitted-signalling; wherein, at least one of the transmitter antenna, the receiver antenna and the magnetic system comprises a plasma antenna, and the magnetic resonance imaging apparatus is configured to provide received-data representative of the radio-frequency-received-signalling, the received-data in combination with the magnetic-system-control-data and the transmitter-control-data suitable for providing magnetic resonance imaging and/or magnetic resonance spectroscopy of the at least one object.

Provided is a method for nitriding a grain-oriented electrical steel sheet which is very useful in obtaining excellent magnetic properties with no variation, that enables generating glow discharge between positive electrodes and negative electrodes disposed in a nitriding zone and irradiating the generated plasma to a strip to perform appropriate nitriding.

A material deposition system comprises a precursor source and a chemical vapor deposition apparatus in selective fluid communication with the precursor source. The precursor source configured to contain at least one metal-containing precursor material in one or more of a liquid state and a solid state. The chemical vapor deposition apparatus comprises a housing structure, a distribution manifold, and a substrate holder. The housing structure is configured and positioned to receive at least one feed fluid stream comprising the at least one metal-containing precursor material. The distribution manifold is within the housing structure and is in electrical communication with a signal generator. The substrate holder is within the housing structure, is spaced apart from the distribution assembly, and is in electrical communication with an additional signal generator. A microelectronic device and methods of forming a microelectronic device also described.

An apparatus may include a main chamber, a substrate holder, disposed in a lower region of the main chamber, and defining a substrate region, as well as an RF applicator, disposed adjacent an upper region of the main chamber, to generate an upper plasma within the upper region. The apparatus may further include a central chamber structure, disposed in a central portion of the main chamber, where the central chamber structure is disposed to shield at least a portion of the substrate position from the upper plasma. The apparatus may include a bias source, electrically coupled between the central chamber structure and the substrate holder, to generate a glow discharge plasma in the central portion of the main chamber, wherein the substrate region faces the glow discharge region.

The present disclosure describes methods and systems for radical-activated etching of a metal oxide. The system includes a chamber, a wafer holder configured to hold a wafer with a metal oxide disposed thereon, a first gas line fluidly connected to the chamber and configured to deliver a gas to the chamber, a plasma generator configured to generate a plasma from the gas, a grid system between the plasma generator and the wafer holder and configured to increase a kinetic energy of ions from the plasma, a neutralizer between the grid system and the wafer holder and configured to generate electrons and neutralize the ions to generate radicals, and a second gas line fluidly connected to the chamber and configured to deliver a precursor across the wafer. The radicals facilitate etching of the metal oxide by the precursor.

Apparatus include an atmospheric pressure glow discharge (APGD) analyte electrode defining an analyte discharge axis into an APGD volume, and a plurality of APGD counter electrodes having respective electrical discharge ends directed to the APGD volume, wherein the APGD analyte electrode and the APGD counter electrodes are configured to produce an APGD plasma in the APGD volume with a voltage difference between the APGD analyte electrode and one or more of the AGPD counter electrodes. An electrode can be integrated into an ion inlet. Apparatus can be configured to perform auto-ignition and/or provide multi-modal operation through selectively powering electrodes. Electrode holder devices are disclosed. Related methods are disclosed.

Surface modification device forms a discharge area E1 between a discharge electrode 6 and a counter electrode 4, supplies substitution gas to the discharge area E1, and modifies the surface of the base material to be processed. The surface modification device comprises; a slit-shaped substitution gas passage; and cover members 7, 8 that form curtain passages 22, 23 in spaces facing the discharge electrode. While the substitution gas is being supplied to the discharge area E1, gas injected from the curtain passages 22, 23 prevent the inflow of an entrained flow a and the outflows b1, b2 of the substitution gas, thereby maintaining the concentration of substitution gas inside the discharge area E1.