The present invention relates to a method for the evaporation of a cathode by means of cathodic arc evaporation, wherein the focal spot of the arc is forced to a predetermined track on the cathode surface by means of temporally and spatially controllable magnetic fields, wherein a predetermined removal of material of the cathode surface is produced. The invention also relates to a device for carrying out the method according to the invention.

Aspects of the present disclosure involve a plasma system for practicing various methods of synthesizing solid-state electrolyte materials and precursors for solid-state electrolyte materials.

Embodiments of the present disclosure provide a mask structure and a filtered cathodic vacuum arc (FCVA) apparatus. The mask structure is configured to prepare protrusions on a carrying surface of an electrostatic chuck and includes a main mask plate and a side mask plate that are made of a conductive metal. The main mask plate is configured to form a patterned film layer corresponding to the protrusions on the carrying surface of the electrostatic chuck. The side mask is configured to cover a side surface of the electrostatic chuck to avoid forming a film layer on the side surface. The mask structure can be electrically conductive. The mask structure may prevent the side surface of the electrostatic chuck from being coated when the protrusions are prepared on the carrying surface of the electrostatic chuck. Thus, the mask structure may be applied to an FCVA process.

A cathode arc source comprises: a cathode target; a first magnetic field source located above the target; a second magnetic field source located below the target; and a third magnetic field source located between the first and second magnetic field sources and having an opposite polarity to the first magnetic field source; wherein the resultant magnetic field from the first, second and third magnetic field sources has zero field strength in a direction substantially normal to the target at a position above the target. The invention also provides methods of striking a cathode target and methods of depositing coatings which can be carried out using the cathode arc source described herein.

A method and system for fluorine ion implantation is described, where a fluorine compound capable of forming multiple fluorine ionic species is introduced into an ion implanter at a predetermined flow rate. Fluorine ionic species are generated at a predetermined arc power and source magnetic field, providing an optimized beam current for the desired fluorine ionic specie. The desired fluorine ionic specie, such as one having multiple fluorine atoms, is implanted into the substrate under the selected operating conditions.

The present invention discloses a magnetic filter tube, and relates to the technical field of magnetic filters. The magnetic filter tube includes a first rectangular tube and a second rectangular tube, where one end of the first rectangular tube is fixedly connected to one end of the second rectangular tube; the other end of the first rectangular tube forms an inlet of the magnetic filter tube; the inlet of the magnetic filter tube is connected with a cathode target flange; the other end of the second rectangular tube forms an outlet of the magnetic filter tube; the outlet of the magnetic filter tube is connected with a vacuum chamber; an inner wall of the first rectangular tube and an inner wall of the second rectangular tube are each provided with a protrusion and a groove; the protrusion is filled with cold water.

A coating device that can control a coating thickness distribution along the circumferential direction of a work is provided. The coating device includes a work turning device that holds a plurality of works to rotate and revolve the works, a target having an emission face from which particles come out as a material of a coating formed on an outer circumferential face of each of the works, a power source that supplies an arc current to the target to cause the particles to come out of the target, and a controller that controls the power source to set the arc current in a particular period to be higher than a reference output, the particular period being at least a portion of a period in which a particular portion of the rotating work faces the emission face.

The invention relates to an arrangement for coating substrate surfaces by means of electric arc discharge in a vacuum chamber, wherein electric arc discharges between a target (1) which is electrically connected as a cathode and is formed from a metal material are used. Arranged at a distance from the target (1) is an anode (2), with which the electric arc discharges are ignited to form a plasma formed with metal material of the target (1). The target (1) is connected to a first electric power source (3) and the anode (2) to a second electric power source (4), wherein the absolute values of the electric voltages connected to the target (1) and to the anode (2) different from one another.

An ARC evaporator comprising: —a cathode assembly, —an electrode arranged for enabling that an arc between an electrode and a front surface of the target can be established, and—a magnetic guidance system placed in front of a back surface of the target characterized in that: the magnetic guidance system comprises means placed in a central region for generating at least one magnetic field and means in a peripherical region for generating at least one further magnetic field, wherein the magnetic fields generated in this manner result in a total magnetic field for guiding the arc and controlling the cathode spot path at the front surface of the target, wherein the means placed in the central region comprises one electromagnetic coil for generating a magnetic field and the means placed in the peripherical region comprises two electromagnetic coils for generating two further magnetic fields.

A device and method for sputtering and depositing metal on the surface of magnetic powder materials utilizes a vacuum chamber, a vacuum pump set, a magnetron sputtering target, a cathode ion source, a water-cooled anode, and a sample holding component arranged in the vacuum chamber. The sample holding component is a sample roller, an axis of the sample roller is arranged in a horizontal direction, the sample roller can rotate around the axis thereof. Two ends of the sample roller are open, and the sample roller further comprises a power device capable of driving the sample roller to rotate. The cathode ion source and the magnetron sputtering target extend inwards into the sample roller from the opening in the same end of the sample roller. The water-cooled anode extends inwards into the sample roller from the opening in the other end of the sample roller.