A method of producing an induced pluripotent stem cell includes introducing into a somatic cell one or more non-viral expression vectors. The vectors include one or more of an Oct family gene, a Klf family gene, a Sox family gene, a Myc family gene, a Lin family gene, and Nanog gene. The somatic cell is then cultured in a medium that supports pluripotent stem cells. At least a portion of the one or more introduced non-viral expression vectors is not substantially integrated in the chromosome.

Improved deposition of optoelectronically active perovskite materials is provided with a two step process. In the first step, precursors are deposited on a substrate. In the second step, the deposited precursors are exposed to an atmospheric pressure plasma which efficiently cures the precursors to provide the desired perovskite thin film. The resulting films can have excellent optical properties combined with superior mechanical properties.

A deposition apparatus includes a chamber, a stage which is disposed within the chamber and on which a target substrate is seated, a deposition source disposed within the chamber and including a deposition material, a plurality of nozzles connected to the deposition source within the chamber to inject the deposition material in a direction of the stage, and an ionizer disposed between the nozzles and the stage to charge the deposition material injected from the nozzles. A first electric field is generated in each of the ionizer and the nozzles, and a second electric field having an intensity less than the first electric field is generated between the stage and the ionizer. Each of the nozzles includes a plurality of protrusion tips disposed on an inner surface of each of the nozzles to charge the deposition material.

Described herein are plasma generation devices and methods of use of the devices. The devices can be used for the cleaning of various surfaces and/or for inhibiting or preventing the accumulation of particulates, such as dust, or moisture on various surfaces. The devices can be used to remove dust and other particulate contaminants from solar panels and windows, or to avoid or minimize condensation on various surfaces. In an embodiment a plasma generation device is provided. The plasma generation device can comprise: a pair of electrodes positioned in association with a surface of a dielectric substrate. The pair of electrodes can comprise a first electrode and a second electrode. The first electrode and second electrode can be of different sizes, one of the electrodes being smaller than the other of the electrodes. The first electrode and second electrode can be separated by a distance and electrically connected to a voltage source.

The present invention relates to corona charge deposition systems that use High Voltage (HV) amplifiers for precisely controlling corona charge deposition. Some implementations, provide a corona charge deposition system that uses multiple voltage sources to maintain specified voltages applied on several electrodes to precisely control the corona current required to deposit a desired amount of charge on a sample. The HV amplifiers are able to source and sink currents to maintain stable voltages applied on control electrodes in the presence of a higher voltage applied on a needle electrode. The proposed apparatus and method of monitoring multiple signals, controlling multiple voltages, and predicting charge profile deposited on a sample can precisely control charge deposition processes.

The method of the present invention is capable of polishing a high hardness work at high polishing efficiency. The method comprises the steps of: pressing a surface of the work onto a polishing part of a rotating polishing plate; and supplying slurry while performing the pressing step. The method is characterized in that an activated gas, which has been activated by gas discharge, is turned into bubbles and mixed into the slurry.

The invention relates to a method for reducing an end face stickiness a roll (21) of adhesive tape, by supplying a precursor (4) comprising organic polyfunctional silanes to a plasma stream, directing the plasma stream enriched with the precursor (4) at the roll end face (20), and coating the roll end face (20) with an SiOx coating.

The adhesiveness of a treatment target made of a fluorine-based hard-to-adhere material is improved. A process gas containing any one or two or more among carbon monoxide, carbon dioxide, hydrogen, water vapor, ethanol, propanol, hexanol, ethylene glycol, and ammonia is supplied from a process gas supply unit 10 to a plasma generation unit 20. In the plasma generation unit 20, the process gas is activated by plasma and is brought into contact with a treatment target 9, and through a reaction caused by the contact, the residual ratio of fluorine atoms on a surface of the treatment target 9 is adjusted to 60% or less of that before the contact, and any one among a carbon atom, a hydrogen atom, and an oxygen atom, or a molecule containing one or more of these atoms is provided to the surface of the treatment target.

A passivation equipment and a passivation method for a semiconductor device are provided in the present invention. The passivation equipment for the semiconductor device includes a chamber housing and a splitter disposed in the chamber housing. The splitter divides the chamber housing to a first chamber and a second chamber. The passivation equipment further includes a first intake tube connected to the first chamber, a plasma producing unit disposed in the first chamber and a pressure detecting unit connected to the first chamber. By using the passivation equipment of the present invention, high-pressure plasma is used to increase a passivation efficiency of the semiconductor device and decrease a temperature of a passivation reaction.

A plasma generator includes an outer electrode that encloses a first inner electrode and a second inner electrode. The first inner electrodes includes a plurality of protrusions that extend towards the outer electrode. A voltage signal can be applied across the outer electrode and the first inner electrode to excite gas injected into gaps between the protrusions and the outer electrode. Plasma is generated surrounding the protrusions. The second inner electrode is at a downstream location of the excited gas relative to the first inner electrode. The second inner electrode forms a second gap with the outer electrode. A voltage signal can be applied across the second inner electrode and the outer electrode, further exciting the gas to generate second plasma at the second gap. The second plasma is spread evenly across the second inner electrode and the outer electrode.