One object of the present disclosure is to provide a production method of magnesium hydride that is free of carbon dioxide and has high production efficiency, a power generation system that does not emit carbon dioxide or radiation using magnesium hydride, and an apparatus for producing magnesium hydride; therefore, the method for producing magnesium hydride of the present disclosure comprises a procedure for irradiating a magnesium compound different from magnesium hydride with hydrogen plasma, and a procedure for depositing a magnesium product containing magnesium hydride on a depositor for depositing magnesium hydride disposed within the range in which hydrogen plasma is present, wherein the surface temperature of the depositor is kept no more than a predetermined temperature at which magnesium hydride precipitates.

A microwave treatment device comprises a treatment chamber, in which an object to be treated can be arranged, and a microwave emission device, by which microwave radiation can be radiated into the treatment chamber or emitted therein. The microwave emission device comprises at least one array antenna with a plurality of individual emitters and a microwave control device which can be used to specify an emission characteristic for each individual emitter of the at least one array antenna. A phase and/or amplitude of the microwave emission can be specified for each individual emitter by the microwave control device. A phase and/or an amplitude of the microwave emission can be specified for each individual emitter by the microwave control device. Furthermore, a frequency of the microwave emission can be specified within a frequency range for each individual emitter by the microwave device.

A system for producing carbonaceous materials is disclosed that includes an energy source configured to emit microwave energy and a plasma reactor coupled to receive the microwave energy and configured to produce plasma in response to exposure of one or more process gases to the microwave energy. In some instances, the plasma reactor includes a first chamber having a rectangular cross-section and configured to receive the microwave energy from the energy source as sinusoidal waveform, a second chamber having a cylindrical cross-section and configured to receive microwave energy from the first chamber as a radial waveform having an energy maxima at a radial center of the cylindrical cross-section, the second chamber including an opening to receive one or more process gases and configured to ignite a plasma plume, and a gas-solid separator configured to separate solid materials from the plasma plume.

Provided is a plasma film-firming apparatus including: a chamber configured to accommodate a substrate therein; a substrate pedestal configured to disposed the substrate thereon within the chamber; a gas supply mechanism configured to supply a gas including a film-forming gas into the chamber; an exhaust mechanism configured to exhaust an inside of the chamber; and a plasma generating unit configured to generate plasma in the chamber. The substrate pedestal includes a pedestal body having a smaller diameter than that of the substrate and including a placement surface, and an annular adjustment member disposed outside the pedestal body. The adjustment member is replaceably installed. A plurality of adjustment members having various steps are provided at a position outside the substrate as the adjustment member, and among the plurality of adjustment members, an adjustment member is selected and used according to a processing condition of a plasma processing.

The present disclosure relates to methodologies, systems and apparatus for generating lithium ion battery materials. Starting materials are combined to form a homogeneous precursor solution including lithium, and a droplet maker is used to generate droplets of the precursor solution having controlled size. These droplets are introduced into a microwave generated plasma, where micron or sub-micron scale lithium-containing particles are formed. These lithium-containing particles are collected and formed into a slurry to form lithium ion battery materials.

Disclosed is a method of treating a substrate by using a substrate treating apparatus generating plasma in a treatment space by applying microwaves, the method including: a plasma treatment operation of treating a substrate with the plasma; a replacement operation in which the plasma treatment operation is performed a preset number of times and a component included in the substrate treating apparatus is replaced; and a backup operation of backing up the substrate treating apparatus after the replacement operation, in which the backup operation includes a bake purge operation for removing byproducts present in the component.

An exemplary embodiment of the present invention provided an apparatus for treating a substrate. The apparatus for treating the substrate includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma, wherein the microwave application unit includes a transmission plate disposed above the support unit to radiate the microwaves to the treating space, a first waveguide disposed above the transmission plate, and a first power supply for applying the microwaves to the first waveguide, wherein the first waveguide is provided in a ring shape.

The apparatus includes a process chamber having a treating space therein, a support unit for supporting the substrate in the treating space, a gas supply unit for supplying treating gas to the treating space, and a microwave application unit for applying microwaves to the treating gas to generate plasma. The microwave application unit may include first power supply for applying a first microwave, a support plate having a groove formed on an upper surface thereof and combined with the process chamber above the support unit to define the treating space, a first transmission plate inserted into the groove to radiate the first microwave to the treating space, and a first waveguide disposed to overlap with an upper portion of the first transmission plate and coupled to the first power supply, wherein a plurality of grooves may be formed along a circumferential direction in an edge region of the support plate.

Disclosed is a microwave plasma processing apparatus including: a chamber that accommodates a workpiece; a microwave generating source that generates microwaves; a waveguide unit that guides the microwaves toward the chamber; a planar antenna made of a conductor having a plurality of slots that radiate the microwaves toward the chamber; a microwave-transmitting plate made of a dielectric material that constitutes a top wall of the chamber and transmits the microwaves radiated from the plurality of slots; a gas supply mechanism that supplies a gas into the chamber; and an exhaust mechanism that exhausts an atmosphere in the chamber. The planar antenna includes a plurality of slot groups each forming one unit including one or more of the slots, and the slots are formed so as to form an odd number of the slot groups equal to or more than three in a circumferential direction.

A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.