A processing apparatus has a pedestal which includes an electrostatic chuck and a cooling table. A plurality of heat transfer spaces are provided between the electrostatic chuck and the cooling table. The plurality of heat transfer spaces are coaxially provided with respect to the center axis of the electrostatic chuck and are separated from each other. The processing apparatus further includes a piping system. The piping system is configured to selectively connect each of the plurality of heat transfer spaces to a chiller unit, a source of a heat transfer gas, and an exhaust device.

A local dry etching apparatus includes a vacuum chamber, a nozzle opened in the vacuum chamber, a discharge tube connected to the nozzle, a workpiece table disposed in the vacuum chamber for mounting a workpiece thereon, a table driving device, a table driving control device, an electromagnetic wave oscillator, a gas supply device for supplying a raw material gas to the discharge tube, a plasma generation portion formed in the discharge tube, and an electromagnetic wave transmission unit for irradiation of electromagnetic waves oscillated in the electromagnetic wave oscillator to the plasma generation portion, in which the nozzle and the discharge tube are composed of separate parts and a temperature adjusting unit is provided for adjusting the temperature of at least one of the nozzle and the discharge tube.

A plasma processing apparatus including a sample stage arranged in a processing chamber, a temperature regulator arranged in an interior of the sample stage, a film made of a dielectric that configures the upper surface of the sample stage, and including a film-like electrode therein, a protruding portion arranged on an upper surface of the film made of a dielectric on an outer periphery-side area, and arranged to surround a center-side area of the upper surface in a ring manner, a power source that supplies power for forming electrostatic force that absorbs a wafer arranged above the electrode in the film made of a dielectric, and a controller that regulates the power from the power source and the gas introduction between the wafer and the film to hold the wafer above the film in a noncontact manner.

A segmented antenna assembly for use in a plasma enhanced chemical vapor deposition (PECVD) apparatus. One embodiment provides an apparatus comprising a chamber body having a top surface and a bottom surface, an antenna comprising a first segment, a second segment electrically coupled to the first segment and extending through an interior volume of the chamber, and a third segment electrically coupled to the second segment, and a dielectric layer disposed around an outer diameter of the second segment.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.

A shower plate is disposed in a processing chamber in a plasma processing apparatus, and plasma excitation gas is released into the processing chamber so as to generate plasma. A ceramic member having a plurality of gas release holes having a diameter of 20 μm to 70 μm, and/or a porous gas-communicating body having pores having a maximum diameter of not more than 75 μm communicating in the gas-communicating direction are sintered and bonded integrally with the inside of each of a plurality of vertical holes which act as release paths for the plasma excitation gas.

This microwave plasma processing apparatus has, as a gas introduction mechanism for introducing a working gas inside a chamber (10), electrical discharge prevention members (96(1) to 96(8)), each of which is provided to a plurality of dielectric window gas passages (94(1) to (94(8)) through which a dielectric window (54) passes. Each electrical discharge prevention member (96(n)), a portion (114) of which protrudes only a height h, which is greater than or equal to a predetermined distance H, upward from the rear surface of a dielectric window (52) on the inlet side, passes through an opening (54a) of a slot plate (54), and inserts into a branched gas supply path (92(n)) of a gas branch part (90). The gas branch part (90), spring coils (116) and the slot plate (54), which surround the protruding portion (114) of each electrical discharge prevention member (96(n)), constitute an enclosing conductor (118).

This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a combination of microwave and radio frequency (RF) power sources that may generate plasma conditions to remove monolayer(s). The system may generation a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transition to a second plasma. The differences between the first and second plasma may be include the ion energy proximate to the substrate. For example, the first plasma may have an ion energy of less than 20 eV and the second plasma may have an ion energy greater than 20 eV.

A processing reactor includes a microwave energy source and a field-enhancing waveguide. The field-enhancing waveguide has a field-enhancing zone between a first cross-sectional area and a second cross-sectional area of the waveguide, and also has a plasma zone and a reaction zone. The second cross-sectional area is smaller than the first cross-sectional area, is farther away from the microwave energy source than the first cross-sectional area, and extends along a reaction length of the field-enhancing waveguide. The supply gas inlet is upstream of the reaction zone. In the reaction zone, a majority of the supply gas flow is parallel to the direction of the microwave energy propagation. A supply gas is used to generate a plasma in the plasma zone to convert a process input material into separated components in the reaction zone at a pressure of at least 0.1 atmosphere.

In one aspect, the invention relates to methods to prepare markings on diamond surfaces which are encapsulated by diamond, and the marked diamonds prepared by the disclosed methods. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present invention.