Manufacturing apparatus, systems and method of making silicon (Si) nanowires on carbon based powders, such as graphite, that may be used as anodes in lithium ion batteries are provided. In some embodiments, an inventive tumbler reactor and chemical vapor deposition (CVD) system and method for growing silicon nanowires on carbon based powders in scaled up quantities to provide production scale anodes for the battery industry are described.

Manufacturing apparatus, systems and method of making silicon (Si) nanowires on carbon based powders, such as graphite, that may be used as anodes in lithium ion batteries are provided. In some embodiments, an inventive tumbler reactor and chemical vapor deposition (CVD) system and method for growing silicon nanowires on carbon based powders in scaled up quantities to provide production scale anodes for the battery industry are described.

Embodiments of the disclosure provided herein include a system and method for plasma cleaning and activation using hybrid bonding. The system includes a processing chamber, a substrate support configured to support a substrate during hybrid bonding substrate processing, a gas delivery system coupled to the processing chamber having at least one radical generator, and a controller configured to cause the substrate processing system to form a first layer on a first substrate, dissociate a gas in the at least one radical generator to form a plasma, flow the plasma into the processing volume of the processing chamber for a period of time, exhaust the plasma, by products, and effluent gas from the processing volume after the period of time, and adhere a second layer disposed on a second substrate onto the first layer using a hybrid bonding technique.

Disclosed herein is a processing system. The processing system has an upper chamber body and a lower chamber body defining a processing environment. An upper heater is moveably disposed in the upper chamber body. The upper heater has a moveable support and an upper step formed along an outer perimeter. A lower showerhead is fixedly disposed in the lower chamber body. The lower showerhead includes a top surface configured to support a substrate, a lower step disposed along an outer perimeter wherein the substrate is configured to extend from the top surface partially over the lower step. Lift pins are disposed in the lower showerhead and configured to extend through the top surface and support the substrate thereon. Gas holes are disposed in a first zone along the top surface and a second zone on the step and configured to independently flow both a process and non-process gas.

A method for efficient plasma etching of surfaces inside three-dimensional structures can include positioning an inner electrode within the chamber cavity; evacuating the chamber cavity; adding a first inert gas to the chamber cavity; regulating the pressure in the chamber; generating a plasma sheath along the inner wall of the chamber cavity; adjusting a positive D.C. bias on the inner electrode to establish an effective plasma sheath voltage; adding a first electronegative gas to the chamber cavity; optionally readjusting the positive D.C. bias on the inner electrode reestablish the effective plasma sheath voltage at the chamber cavity; etching the inner wall of the chamber cavity; and polishing the inner wall to a desired surface roughness.

A film formation apparatus and a film-formed workpiece manufacturing method which are capable of forming a film with a uniform thickness on a workpiece like a three-dimensional object that includes a plurality of surfaces by a simple structure are provided. A film formation apparatus includes a target 21 that is a film formation material including a plane SU3, a power supply unit 3 applying power to the target 21, a rotating unit 4 rotating a workpiece W that is a film formation object around a rotation axis AX1, and a revolving unit 5 revolving the rotating unit 4 around a revolution axis AX2 separate from the rotation axis AX1 to repeatedly make the workpiece W to come close to and move apart from the target 21.

Methods and apparatus for processing substrates are provided herein. In some embodiments, a physical vapor deposition chamber includes a first RF power supply having a first base frequency and coupled to one of a target or a substrate support; and a second RF power supply having a second base frequency and coupled to one of the target or the substrate support, wherein the first and second base frequencies are integral multiples of each other, wherein the second base frequency is modified to an offset second base frequency that is not an integral multiple of the first base frequency.

In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

Embodiments of apparatus for physical vapor deposition are provided. In some embodiments, a target assembly for use in a substrate processing system to process a substrate includes a plate having a first side and an opposing second side, wherein the second side comprises a target supporting surface extending from the second side in a direction normal to the second side, wherein the target supporting surface has a first diameter and is bounded by a first edge; and a target having a first side bonded to the target supporting surface, wherein a diameter of the target is greater than the first diameter of the target supporting surface.

An ion beam etching device comprises: an ion source configured to generate ions; a grid on a side of the ion source, the grid configured to accelerate the generated ions to generate an ion beam; a process chamber configured to have an etching process using the ion beam performed therein; and a variable magnetic field application part adjacent to the process chamber, the variable magnetic field application part configured to apply a variable magnetic field.