A film forming apparatus includes a cylindrical evaporation source, an electrode, and a gas passage. The evaporation source is composed of metal and includes an internal space for accommodating a workplace. The electrode is arranged in the internal space of the evaporation source, The gas passage supplies gas to the internal space of the evaporation source from a space outside the evaporation source. The gas passage includes an end portion located in the internal space. The end portion of the gas passage includes a first section composed of a first material and a second section composed of a second material. The first material and the second material have different thermal expansion coefficients.

A manufacturing process of an element chip comprises steps of preparing a substrate including dicing regions and element regions, attaching a holding sheet held on a frame with a die attach film in between, forming a protective film covering the substrate, forming a plurality of grooves in the protective film along the dicing regions, plasma-etching the substrate to expose the die attach film and then die attach film along the dicing regions, and picking up each of the element chips along with the separated die attach film away from the holding sheet, wherein the die attach film has an area greater than that of the substrate, and wherein the protective film includes a first covering portion covering the substrate and a second covering portion covering at least a portion of the die attach film that extends beyond an outer edge of the substrate.

In some implementations described herein, a collimator that is biasable is provided. The ability to bias the collimator allows control of the electric field through which the sputter species pass. In some implementations of the present disclosure, a collimator that has a high effective aspect ratio while maintaining a low aspect ratio along the periphery of the collimator of the hexagonal array of the collimator is provided. In some implementations, a collimator with a steep entry edge in the hexagonal array is provided. It has been found that use of a steep entry edge in the collimator reduces deposition overhang and clogging of the cells of the hexagonal array. These various features lead to improve film uniformity and extend the life of the collimator and process kit.

A method for coating an inside of a polyethylene terephthalate bottle with an oxide of silicon includes cooling the bottle within a covered cooling segment while transporting it toward a coating chamber, immediately after having cooled and transported said PET bottle to said coating chamber, forming a plasma, creating an under-pressure, and coating an inner surface of said bottle with an oxide of silicon.

According to the process, the filiform component is continuously linearly moved through magnetic dipoles arranged opposite each other and around a tube constituting a treatment chamber, and the microwave energy is introduced between at least two magnetic dipoles.

An article has a cavity defined by an inner surface, the cavity having a size such that a largest sphere placeable in the cavity has a diameter of less than 7 cm and a smallest sphere placeable in the cavity has a diameter of 0.5 mm; and a hard coating on the inner surface, the hard coating having a hardness between 18 to 100 GPa, the hard coating distributed on the inner surface such that a ratio of a coating thickness at a first region of the hard coating to that at a second region of the hard coating ranges from 0.75 to 1.33.

A method and a device are provided for homogeneously coating surfaces of 3D substrates in a vacuum chamber which has a sputtering source, such as a planar source or a tube or double-tube source, wherein individual substrates, with a curved substrate surface directed toward the sputtering source, are able to be moved past said source in a translational manner. The sputtering source is fastened to a chamber wall within a vacuum chamber so as to have two degrees of freedom such that the sputtering source is able to be set both in terms of its spacing to a surface to be coated of a substrate, which is moved past in front of said sputtering source in a translational manner, and with respect to the surface normal of the surface to be coated proceeding from a fixed point such that the surface normal deviation is 0 at all times.

A plasma etching source installable into at least one of multiple compartments of a sputter deposition tool. The plasma etching source includes a first mounting plate and at least one electrode plate coupled to the first mounting plate. A gas inlet is included in the first mounting plate of the plasma etching source.

A pretreatment assembly includes a product support assembly and a pretreatment device. The product support assembly includes a primary support assembly, a primary drive assembly, a number of secondary support assemblies, and a secondary drive assembly. The primary drive assembly is operatively coupled to the primary support assembly. The primary drive assembly imparts a generally constant motion to the primary support assembly. Each secondary support assembly is structured to support a number of work pieces. Each secondary support assembly is movably coupled to the primary support assembly. The secondary drive assembly is operatively coupled to each secondary support assembly. The secondary drive assembly selectively imparts a motion to each secondary support assembly. The pretreatment device is disposed adjacent the product support assembly.

A device and a process for applying multiple plasma coating layers in a vacuum, and a product created from that process. The process includes disposing a substrate in a vacuum chamber and applying multiple plasma coating layers to the substrate without breaking vacuum.