A novel method, composition and system for using antimony-containing dopant materials are provided. The composition is selected with sufficient vapor pressure to flow into an arc chamber as part of an ion implant process. The antimony-containing material is represented by a non-carbon containing chemical formula, thereby reducing or eliminating the introduction of carbon-based deposits into the ion chamber. The composition is stored in a storage and delivery vessel under stable conditions, which includes a moisture-free environment that does not contain trace amounts of moisture.

Disclosed is a semiconductor processing apparatus including one or more components having a conductive or nonconductive porous material. In some embodiments, an ion implanter may include a plurality of beam line components for directing an ion beam to a target, and a porous material along a surface of at least one of the plurality of beamline components.

An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate.

A focus controlling component is configured to control a focus of a laser beam that passes through water and induces plasmas that emit signals. The focus of the laser beam is controlled such that the signals emitted by the induced plasmas interfere to form a combined signal that propagates in a desired direction.

An ion source includes a vaporizer, a plasma chamber, and a controller. The vaporizer produces a reaction product by supplying, through a first gas supply line to a crucible in which a solid material is installed, a reactive gas that reacts with the solid material, and vaporizes the reaction product by heating the crucible with a heater. The plasma chamber is supplied with a vapor from the vaporizer through a vapor supply line, and has a second gas supply line connected to the plasma chamber separately from the vapor supply line. The controller controls the heater to heat the crucible while a gas is being supplied from the second gas supply line to the plasma chamber and stops a supply of the reactive gas through the first gas supply line to the crucible.

Embodiments of the present disclosure generally relate to techniques for deposition of high-density films for patterning applications. In one embodiment, a method of processing a substrate is provided. The method includes depositing a carbon hardmask over a film stack formed on a substrate, wherein the substrate is positioned on an electrostatic chuck disposed in a process chamber, implanting ions into the carbon hardmask, wherein depositing the carbon hardmask and implanting ions into the carbon hardmask are performed in the same process chamber, and repeating depositing the carbon hardmask and implanting ions into the carbon hardmask in a cyclic fashion until a pre-determined thickness of the carbon hardmask is reached.

A target processing method includes: importing a target into a processing chamber; forming a film including carbon on the target using at least one of first ion including carbon and a first plasma including carbon; and removing the film by a reaction between a second plasma and the film, wherein the forming of the film and the removing of the film are alternately performed a number of times in the processing chamber without removing the target from the processing chamber.

In some embodiments of the present disclosure, a method of manufacturing a semiconductor structure includes the following operations. A substrate including a first atom and a second atom is provided. An etchant is dispatched from an ionizer. A compound is formed over the substrate by bonding the first atom with the etchant. A particle is released from an implanter. The compound is removed by bombarding the compound with the particle having an energy smaller than a bonding energy between the first atom and the second atom, wherein the particle is different from the etchant.

An ion beam treatment or implantation system includes an ion source emitting a plurality of parallel ion beams having a given spacing. A first lens magnet having a non-uniform magnetic field receives the plurality of ion beams from the ion source and focuses the plurality of ion beams toward a common point. The system may optionally include a second lens magnet having a non-uniform magnetic field receiving the ion beams focused by the first lens magnet and redirecting the ion beams such that they have a parallel arrangement having a closer spacing than said given spacing in a direction toward a target substrate.

An ion implanter and method for facilitating expeditious performance of maintenance on a component of the ion implanter in a manner that reduces downtime while increasing throughput of the ion implanter. The ion implanter includes a process chamber, a transfer chamber connected to the process chamber, a first isolation gate configured to controllably seal the transfer chamber from the process chamber, and a second isolation gate configured to controllably seal the transfer chamber from an atmospheric environment, wherein a component of the ion implanter can be transferred between the process chamber and the transfer chamber for performing maintenance on the component outside of the process chamber. Performing maintenance on a component of the ion implanter includes the steps of transferring the component from the process chamber to the transfer chamber, sealing the transfer chamber, venting the transfer chamber to atmospheric pressure, an opening the transfer chamber to an atmospheric environment.