A substrate processing system includes a first chamber including a substrate support. A showerhead is arranged above the first chamber and is configured to filter ions and deliver radicals from a plasma source to the first chamber. The showerhead includes a heat transfer fluid plenum, a secondary gas plenum including an inlet to receive secondary gas and a plurality of secondary gas injectors to inject the secondary gas into the first chamber, and a plurality of through holes passing through the showerhead. The through holes are not in fluid communication with the heat transfer fluid plenum or the secondary gas plenum.

A method of plasma etching one or more features in a silicon substrate includes performing a main etch using a cyclical etch process in which a deposition step and an etch step are alternately repeated, and performing an over etch to complete the plasma etching of the features. The over etch includes one or more etch steps of a first kind and one or more etch steps of a second kind, each of the etch steps of the first and second kind include etching by ion bombardment of the silicon substrate. The ion bombardment during the one or more etch steps of the second kind has an inward inclination with respect to ion bombardment during the one or more etch steps of the first kind.

A plasma processing system. The system may include a vacuum chamber including an electron emission region and a processing region, in which plasma is produced and a substrate is loaded, the electron emission region having a first pressure and the processing region being maintained to a pressure higher than the first pressure, a thermal electron emission unit provided in the electron emission region and used to emit a thermal electron, a grid electrode grounded and used to selectively provide an electron emitted from the thermal electron emission unit to the processing region, a substrate holder provided in a lower region of the vacuum chamber and in the processing region, the substrate holder being used to load the substrate thereon, and an RF power source configured to apply an RF power to the substrate holder and to produce the plasma.

Methods, systems, and apparatus for generating hydrogen radicals for processing a workpiece, such as a semiconductor workpiece, are provided. In one example implementation, a method can include generating one or more species in a plasma chamber from an inert gas by inducing a plasma in the inert gas using a plasma source; mixing hydrogen gas with the one or more species to generate one or more hydrogen radicals; and exposing the workpiece in a processing chamber to the one or more hydrogen radicals.

Methods of etching metal by depositing a material reactive with a metal to be etched and a halogen to form a volatile species and exposing the substrate to a halogen-containing gas and activation gas to etch the substrate are provided. Deposited materials may include silicon, germanium, titanium, carbon, tin, and combinations thereof. Methods are suitable for fabricating MRAM structures and may involve integrating ALD and ALE processes without breaking vacuum.

Provided are a method and a device that can measure sputtered particles discharged by sputtering with high precision within a short time. A measuring device has a measuring section that measures a ratio between an equivalent value of the number of ion particles discharged from a target by sputtering caused by a pulsed electric discharge and an equivalent value of the number of neutral particles discharged from the target by the pulsed electric discharge. The ratio between the number of the ion particles and the number of the neutral particles discharged from the target by the sputtering can be regarded as one of factors affecting quality of a vapor-deposited film, a film growth rate and an etching rate. Thus, a factor affecting the quality of the vapor-deposited film, the film growth rate and the etching rate can be grasped and also controlled.

A processing apparatus may include a plasma chamber to house a plasma and having a main body portion comprising an electrical insulator; an extraction plate disposed along an extraction side of the plasma chamber, the extraction plate being electrically conductive and having an extraction aperture; a substrate stage disposed outside of the plasma chamber and adjacent the extraction aperture, the substrate stage being at ground potential; and an RF generator electrically coupled to the extraction plate, the RF generator establishing a positive dc self-bias voltage at the extraction plate with respect to ground potential when the plasma is present in the plasma chamber.

Embodiments of the present disclosure relate to reducing dislocation density in a heteroepitaxial growth film and devices including heteroepitaxial films with reduced dislocation density. According to embodiments of the present disclosure, sidewalls of high aspect ratio trenches may be tilted or angled to allow defects in crystalline material formed in the high aspect ratio trenches to be terminated in the tilted sidewalls, including defects propagating along the length of the high aspect ratio trenches. Embodiments of the present disclosure may be used to reduce defects in heteroepitaxial growth on silicon (Si) for microelectronic applications, such as high mobility channels using Group III-V elements in field effect transistors.

A processing method and system are provided for processing a substrate with a plasma in the presence of an electro-negative gas. A processing gas is injected into a processing chamber. The gas includes a high electron affinity gas species. A surface is provided in the plasma chamber onto which the gas species has a tendency to chemisorb. The gas species is exposed to the surface, chemisorbed onto it, and the surface is exposed to energy that causes negative ions of the chemisorbed gas species, that interact in the plasma to release secondary electrons. A neutralizer grid may be provided to separate from the chamber a second chamber in which forms a low energy secondary plasma for processing the substrate that is dense in electrons and contains high energy neutrals of the gas species and high energy positive ions of processing gas. Pulsed energy may be used to excite plasma or bias the substrate. A hollow cathode source is also provided.

In one implementation, a method of removing a metal-containing layer is provided. The method comprises generating a plasma from a fluorine-containing gas. The plasma comprises fluorine radicals and fluorine ions. The fluorine ions are removed from the plasma to provide a reactive gas having a higher concentration of fluorine radicals than fluorine ions. A substrate comprising a metal-containing layer is exposed to the reactive gas. The reactive gas dopes at least a portion of the metal-containing layer to form a metal-containing layer doped with fluorine radicals. The metal-containing layer doped with fluorine radicals is exposed to a nitrogen and hydrogen containing gas mixture and the reactive gas to remove at least a portion of the metal-containing layer doped with fluorine radicals.