An etching apparatus includes: a chamber; a substrate support disposed in the chamber; one or more heaters disposed in the substrate support; a gas supply; a plasma generator; a controller configured to perform an etching process comprising a plurality of cycles; and a heater controller. Each cycle includes: controlling the gas supply to supply a precursor into the chamber, thereby forming a precursor layer on a substrate supported by the substrate support, the substrate including a film and a mask; and controlling the gas supply and the plasma generator to supply a process gas into the chamber and generate a plasma from the process gas in the chamber, thereby etching the film through the mask.

Embodiments disclosed herein generally relate to a system and, more specifically, a substrate processing system. The substrate processing system includes one or more cooling systems. The cooling systems are configured to lower and/or control the temperature of a body of the substrate processing system. The cooling systems include features to cool the body disposed in the substrate processing system using gas and/or liquid cooling systems. The cooling systems disclosed herein can be used when the body is disposed at any height.

Sealing various machined component parts used in plasma etching chambers using an Atomic Layer Deposition (ALD) coating. By sealing the component parts with the ALD layer, surface erosion/etch caused by repeated exposure to plasma during workpiece fabrication is eliminated or significantly mitigated. As a result, unwanted particle generation, caused by erosion, is eliminated or significantly reduced, preventing contamination within the plasma etching chamber.

According to one aspect of the technique of the present disclosure, there is provided a substrate processing apparatus including: a process vessel in which a substrate is processed; an outer vessel configured to cover an outer circumference of the process vessel; a gas flow path provided between the outer vessel and the outer circumference of the process vessel; an exhaust path in communication with the gas flow path; an adjusting valve configured to be capable of adjusting a conductance of the exhaust path; a first exhaust apparatus provided on the exhaust path downstream of the adjusting valve; a pressure sensor configured to measure an inner pressure of the outer vessel; and a controller configured to be capable of adjusting an exhaust volume flow rate of the first exhaust apparatus by controlling the first exhaust apparatus based on a pressure measured by the pressure sensor.

Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.

A grounding cap module includes a main body, a frame portion, and a cap portion. The main body includes a first opening penetrating the main body and a grounding portion disposed on a periphery of the main body and configured to be electrically grounded. The frame portion is disposed on the main body and includes a second opening aligned with the first opening. The cap portion is disposed on the frame portion and covers the second opening, wherein the first opening, the second opening and the cap portion define a receiving cavity. A gas injection device and an etching apparatus using the same are also provided.

A technique increases verticality in etching. An etching method is a method for etching a target film with a plasma processing apparatus including a chamber and a substrate support located in the chamber to support a substrate, the substrate support holding a substrate that includes the target film, the target film including a patterned mask film having at least one opening. The etching method includes supplying a process gas containing an HF gas into the chamber, and etching the target film by: generating plasma from the process gas in the chamber with radio-frequency power having a first frequency, and applying a pulsed voltage periodically to the substrate support at a second frequency lower than the first frequency.

The present inventive concept relates to a substrate treatment apparatus comprising: a support part for supporting a substrate; a first electrode part disposed above the support part; a second electrode part disposed above the first electrode part; a generation hole formed to extend through the first electrode part; and a protruding electrode coupled to the second electrode part while protruding downward from the second electrode part at a position corresponding to the generation hole, wherein the protruding electrode is formed to have a shorter length than the first electrode part in the vertical direction.

According to one aspect of the present invention, a method of treating a substrate within a chamber includes performing a unit cycle at least one time, in which the unit cycle includes a substrate treatment step of supplying a reaction gas in which radicals constituting plasma of a first treatment gas are mixed with a second treatment gas onto the substrate, wherein the substrate includes a first thin film, and a second thin film having a lower reactivity to the reaction gas than the first thin film.

One or more embodiments described herein relate to abatement systems for reducing Br.sub.2 and Cl.sub.2 in semiconductor processes. In embodiments described herein, semiconductor etch processes are performed within process chambers. Thereafter, fluorinated greenhouse gases (F-GHGs), HBr, and Cl.sub.2 gases exit the process chamber and enter a plasma reactor. Reagent gases are delivered from a reagent gas delivery apparatus to the plasma reactor to mix with the process gases. Radio frequency (RF) power is applied to the plasma reactor, which adds energy and “excites” the gases within the process chamber. When HBr is energized, it forms Br.sub.2. Br.sub.2 and Cl.sub.2 are corrosive and toxic. However, the addition of H.sub.2O in the plasma reactor quenches the Br.sub.2 and Cl.sub.2 emissions, as the H atoms recombine with the Br atoms and the Cl atoms to form HBr and HCl. HBr and HCl are readily water-soluble and removed through a wet scrubber.