A sputtering chamber includes at least two sputtering targets, one of the at least two targets disposed on a first side a substrate conveyor extending within the chamber, and another of the at least two targets disposed on a second side of the conveyor. The at least two targets may be independently operable, and at least one of the targets, if inactivated, may be protected by a shielding apparatus. Both of the at least two targets may be mounted to a first wall of a plurality of walls enclosing the sputtering chamber.

A chamber member of a plasma source is provided and includes a sidewall, a transition member, a top wall and an injector connecting member. The sidewall is cylindrically-shaped and surrounds an upper region of a substrate processing chamber. The transition member is connected to the sidewall. The top wall is connected to the transition member. The injector connecting member is connected to the top wall, positioned vertically higher than the sidewall, and configured to connect to a gas injector. Gas passes through the injector connecting member via the gas injector and into the upper region of the substrate processing chamber. A center height to low inner diameter ratio of the chamber member is 0.25-0.5 and/or a center height to outer height ratio of the chamber member is 0.4-0.85.

An article may include a substrate defining at least one at least partially obstructed surface. The substrate includes at least one of a ceramic or a ceramic matrix composite. The article also may include a multilayer, multi-microstructure environmental barrier coating on the at least partially obstructed substrate. The multilayer, multi-microstructure environmental barrier coating includes a first layer comprising a rare earth disilicate and a substantially dense microstructure; and a second layer on the first layer. The second layer includes a columnar microstructure and at least one of a rare earth monosilicate or a thermal barrier coating composition comprising a base oxide comprising zirconia or hafnia; a primary dopant comprising ytterbia; a first co-dopant comprising samaria; and a second co-dopant comprising at least one of lutetia, scandia, ceria, gadolinia, neodymia, or europia.

A method of forming a silicon nitride film on a substrate in a vacuum vessel, includes forming the silicon nitride film by depositing a layer of reaction product by repeating a cycle a plurality of times. The cycle includes a first process of supplying a gas of a silicon raw material to the substrate to adsorb the silicon raw material to the substrate, subsequently, a second process of supplying a gas of ammonia in a non-plasma state to the substrate to physically adsorb the gas of the ammonia to the substrate, and subsequently, a third process of supplying active species obtained by converting a plasma forming gas containing a hydrogen gas for forming plasma into plasma to the substrate and causing the ammonia physically adsorbed to the substrate to react with the silicon raw material to form the layer of reaction product.

The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.

A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

A substrate processing system for processing a substrate within a processing chamber is provided and includes a source terminal, a substrate support, and a tuning circuit. The substrate support holds the substrate and includes first and second electrodes, which receive power from a power source via the source terminal. The tuning circuit is connected to the first electrode or the second electrode. The tuning circuit is allocated for tuning signals provided to the first electrode. The tuning circuit includes at least one of a first impedance set or a second impedance set. The first impedance set is serially connected between the first electrode and the power source and receives a first signal from the power source via the source terminal. The second impedance set is connected between an output of the power source and a reference terminal and receives the first signal from the power source via the source terminal.

Proposed is a reactor that is formed by assembling a plurality of components. The reactor includes a body, in which a plurality of components are assemble, and that has a plasma forming space in an interior thereof, and an assembly line for the components is formed in an area that deviates from an area that is closest to an area of the plasma forming space of the body, in which plasma is concentrated, by a specific range.

An article may include a substrate defining at least one at least partially obstructed surface. The substrate includes at least one of a ceramic or a ceramic matrix composite. The article also may include a multilayer, multi-microstructure environmental barrier coating on the at least partially obstructed substrate. The multilayer, multi-microstructure environmental barrier coating includes a first layer comprising a rare earth disilicate and a substantially dense microstructure; and a second layer on the first layer. The second layer includes a columnar microstructure and at least one of a rare earth monosilicate or a thermal barrier coating composition comprising a base oxide comprising zirconia or hafnia; a primary dopant comprising ytterbia; a first co-dopant comprising samaria; and a second co-dopant comprising at least one of lutetia, scandia, ceria, gadolinia, neodymia, or europia.

In accordance with an embodiment, a measurement system includes a sensor circuit configured to provide a voltage sense signal proportional to an electric field sensed by the RF sensor and a current sense signal proportional to a magnetic field sensed by the RF sensor; an analysis circuit comprising a frequency selective demodulator circuit configured to: demodulate the voltage sense signal into a first set of analog demodulated signals according to a set of demodulation frequencies, demodulate the current sense signal into a second set of analog demodulated signals according to the set of demodulation frequencies, and determine a phase shift between the voltage sense signal and the current sense signal for at least one frequency of the set of demodulation frequencies; and analog-to-digital converters configured to receive the first and second sets of analog demodulated signals.