A deposition system is disclosed that allows for growth of inclined c-axis piezoelectric material structures. The system integrates various sputtering modules to yield high quality films and is designed to optimize throughput lending it to a high-volume in manufacturing environment. The system includes two or more process modules including an off-axis module constructed to deposit material at an inclined c-axis and a longitudinal module constructed to deposit material at normal incidence; a central wafer transfer unit including a load lock, a vacuum chamber, and a robot disposed within the vacuum chamber and constructed to transfer a wafer substrate between the central wafer transfer unit and the two or more process modules; and a control unit operatively connected to the robot.

Various embodiments herein relate to methods and systems for integrating a vapor deposition process and an etch process in a single reactor. The vapor deposition process involves delivery of at least one deposition vapor in the absence of plasma. The etch process is a plasma etch process. Various features may be combined as desired to promote high quality deposition and etching results.

Methods, systems, and non-transitory computer readable medium are described for prescriptive analytics in highly collinear response space. A method includes receiving film property data associated with manufacturing parameters of manufacturing equipment. The method further includes determining that the film property data is correlated and is different from target data. The method further includes selecting a set of data points of the film property data that are orthogonal to the target data. The method further includes performing feature extraction on the set of data points. The method further includes determining, based on the feature extraction, updates to one or more of the manufacturing parameters to meet the target data.

A plasma reactor includes a chamber body having an interior space that provides a plasma chamber, a gas distribution port to deliver a processing gas to the plasma chamber, a workpiece support to hold a workpiece, an antenna array comprising a plurality of monopole antennas extending partially into the plasma chamber, and an AC power source to supply a first AC power to the plurality of monopole antennas.

The present disclosure provides a method of manufacturing a semiconductor device, including: (a) loading a substrate with a film formed on a surface thereof into a process vessel; (b) generating a reactive species containing oxygen and a reactive species of a rare gas by converting a mixed gas containing the rare gas and an oxygen-containing gas into a plasma state; and (c) oxidizing the film by supplying the reactive species containing oxygen to the substrate together with the reactive species of the rare gas. In (b), a partial pressure ratio P.sub.N/P.sub.T, which is a ratio of a partial pressure P.sub.N of the rare gas in the process vessel to a total pressure P.sub.T of the mixed gas in the process vessel, is set to a value of 0.4 or less.

An etching method comprises (a) providing a substrate in a chamber, the substrate including a silicon-containing film and a mask on the silicon-containing film; and (b) etching the silicon-containing film, including (b-1) etching the silicon-containing film using plasma generated from a first process gas, the first process gas containing a hydrogen fluoride gas and a reaction control gas to control a reaction between hydrogen fluoride and the silicon-containing film, the first process gas containing, as the reaction control gas, at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction, and (b-2) etching the silicon-containing film using plasma generated from a second process gas, the second process gas containing a hydrogen fluoride gas, and containing at least one of a reaction accelerator gas to accelerate the reaction or a reaction inhibitor gas to inhibit the reaction.

A plasma processing apparatus includes: a chamber including a first member, and a second member detachable from the first member; a conductive member disposed between the first member and the second member; and a first high frequency power supply generating plasma in the chamber. The conductive member includes a resin member made of a resin material, and a metal film covering a surface of the resin member.

A gas distribution system, a reactor system including the gas distribution system, and method of using the gas distribution system and reactor system are disclosed. The gas distribution system can be used in gas-phase reactor systems to independently monitor and control gas flow rates in a plurality of channels of a gas distribution system coupled to a reaction chamber.

A bonding structure for bonding a first conductive member and a second conductive member forming a processing container having therein a processing region for processing a substrate is provided. The processing region is isolated from an outside region. In the bonding structure, a bonding interface is formed between the first conductive member and the second conductive member, an endless first sealing groove and an endless second sealing groove face the bonding interface while being separated from each other, a first sealing member is fitted in the first sealing groove and a second sealing member is fitted in the second sealing groove, and gaps formed by surface irregularities of the bonding interface between the first sealing groove and the second sealing groove communicate with the outside region.

A plasma processing apparatus configured to perform plasma processing on a conductive workpiece having a flat plate shape includes: a conductive vacuum chamber having a recessed portion which is configured to cause a processing object portion of at least one side of the workpiece having a flat plate shape to be disposed in the recessed portion and a peripheral edge portion which is provided outside the recessed portion to be continuous with the recessed portion; a holding member configured to hold the workpiece to be separated and insulated from the peripheral edge portion; a voltage application unit configured to apply a voltage between the workpiece and the vacuum chamber; and an insulating layer configured to cover a portion of the peripheral edge portion facing the workpiece.