Aspects of the present disclosure relate generally to pedestals, components thereof, and methods of using the same for substrate processing chambers. In one implementation, a pedestal for disposition in a substrate processing chamber includes a body. The body includes a support surface. The body also includes a stepped surface that protrudes upwards from the support surface. The stepped surface is disposed about the support surface to surround the support surface. The stepped surface defines an edge ring such that the edge ring is integrated with the pedestal to form the body that is monolithic. The pedestal also includes an electrode disposed in the body, and one or more heaters disposed in the body.

Provided is a filter device including a plurality of coils, a plural of capacitors, and a frame. The coils constitute a plurality of coil groups. Each coil group includes two or more coils. The two or more coils in each coil group are provided such that respective windings of the two or more coils extend spirally about a central axis and respective turns of the two or more coils are sequentially and repeatedly arranged in an axial direction in which the central axis extends. The coil groups are provided coaxially with the central axis. A pitch between the respective turns of the two or more coils of any one coil group among the coil groups is larger than a pitch between the respective turns of the two or more coils of the coil group provided inside the one coil group among the coil groups.

Provided is a substrate processing apparatus. The substrate processing apparatus includes a tube configured to provide a processing space, a partition wall configured to provide a discharge space in which plasma is generated, a gas supply pipe configured to supply a process gas to the discharge space, and a plurality of electrodes disposed outside the tube to generate the plasma in the discharge space. The tube has a plurality of recesses recessed inward from the outermost circumferential surface of the tube, and the plurality of electrodes are accommodated in the plurality of recesses, respectively.

A method for controlling reflected power in a plasma processing system is provided, including: applying RF power from a first generator to an ESC; applying RF power from a second generator to an edge electrode that surrounds the ESC and is disposed below an edge ring that surrounds the ESC, the RF power from the second generator having a voltage set based on the amount of use of the edge ring, wherein the second generator automatically introduces a phase adjustment so that a phase of the RF power from the second generator substantially matches a phase of the RF power from the first generator; and, adjusting a variable capacitor of a match circuit through which the RF power from the second generator is applied to tune the phase adjustment to a target phase adjustment setting.

Provided is a filter device includes: a first coil group including a plurality of coils arranged along a central axis and spirally wound with a first inner diameter; and a second coil group including a plurality of coils arranged along the central axis and spirally wound with a second inner diameter larger than the first inner diameter. A pitch between respective turns of the plurality of coils of the second coil group is larger than a pitch between respective turns of the plurality of coils of the first coil group.

The present invention provides a method for plasma dicing a substrate. The method comprising providing a process chamber having a wall; providing a plasma source adjacent to the wall of the process chamber; providing a work piece support within the process chamber; placing the substrate onto a support film on a frame to form a work piece work piece; loading the work piece onto the work piece support; providing a clamping electrode for electrostatically clamping the work piece to the work piece support; providing a mechanical partition between the plasma source and the work piece; generating a plasma through the plasma source; and etching the work piece through the generated plasma.

A method for manufacturing a display device according to an embodiment includes: forming a display panel including a first substrate, a second substrate facing the first substrate, an emission layer disposed between the first substrate and the second substrate, a pad portion disposed on the first substrate, and a thin film encapsulation layer disposed on the pad portion; removing the thin film encapsulation layer disposed on the pad portion by using a plasma processing device; and attaching a flexible circuit board on which an integrated circuit chip is mounted to the pad portion exposed by removing the thin film encapsulation layer.

A plasma processing apparatus is disclosed, comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber; a lower electrode disposed in the substrate support; at least one RF power source coupled to the lower electrode; an electromagnet unit disposed on or above the plasma processing chamber; and an upper electrode assembly, disposed above the substrate support, including: an insulating plate having a plasma exposed surface; a gas diffusion plate having a gas diffusion space; and an upper electrode plate, disposed between the insulating plate and the gas diffusion plate, including: a coolant inlet and a coolant outlet located at a location that is radially outward from the electromagnet unit; a coolant supply channel extending radially from the coolant inlet to a vicinity of the approximate center of the upper electrode plate; and a coolant return channel extending from the vicinity of the approximate center of the upper electrode plate to the coolant outlet.

An apparatus for plasma processing includes a chamber, a lower electrode on which a substrate is placed in the chamber, an edge ring disposed around the lower electrode, an upper electrode facing the lower electrode in the chamber, a member disposed around the upper electrode, a gas supply section configured to supply a process gas to a space between the member and the lower electrode, and a power supply for applying radio frequency power to the lower electrode or the upper electrode to generate a plasma of the process gas. The member includes an inner member and an outer member positioned outside the inner member, and the outer member is disposed outside the edge ring in a radial direction. At least part of the outer member is movable in a vertical direction.

A plasma processing apparatus comprising: a chamber; a substrate support disposed in the chamber and including a lower electrode, a substrate supporting surface for supporting a substrate, and an edge ring disposed to surround the substrate placed on the substrate supporting surface; an upper electrode disposed above the lower electrode; a power supply portion configured to supply two or more powers having different frequencies, the power supply portion including a source power supply configured to supply a source power for generating plasma from a gas in the chamber to the upper electrode or the lower electrode, and at least one bias power supply configured to supply one bias power or two or more bias powers having different frequencies to the lower electrode; at least one variable passive component electrically connected to the edge ring; and at least one bypass circuit that electrically connects the power supply portion and the edge ring and is configured to supply a part of at least one power selected from the group consisting of the source power and at least one bias power to the edge ring.