Embodiments described herein generally relate to a substrate support assembly having a shield cover. In one embodiment, a substrate support assembly is disclosed herein. The substrate support assembly includes a support plate, a plurality of RF return straps, at least one shield cover, and a stem. The support plate is configured to support a substrate. The plurality of RF return straps are coupled to a bottom surface of the support plate. At least one shield cover is coupled to the bottom surface of the support plate, between the plurality of RF return straps and the bottom surface. The stem is coupled to the support plate.

A vacuum container is configured so that an opening on one side and an opening on another side in the longitudinal direction of a cylindrical insulating body are sealed with an emitter unit and a target unit respectively; and a vacuum chamber is provided on the inner peripheral side of the insulating body. The emitter unit is provided with: a moving body located on the one side in the longitudinal direction in the vacuum chamber and supported so as to be movable in the longitudinal direction via a bellows; and a guard electrode located on the outer peripheral side of the moving body. An emitter section having an electron generating section is formed at a tip section of the moving body on the other side in the longitudinal direction by subjecting the surface of the tip section to film formation processing.

This description relates to a plasma treatment apparatus including a vapor chamber, a gas supply and an upper electrode assembly. The upper electrode assembly includes a gas distribution plate having a plurality of holes in a bottom surface thereof and an upper electrode having at least one gas nozzle and at least one controllable valve connected to the at least one gas nozzle. The plasma treatment apparatus further includes a controller configured to generate a control signal. The at least one controllable valve is configured to be adjusted based on the control signal. A control system and a method of controlling a controllable valve are also described.

A plasma processing device that includes a processing chamber which is disposed in a vacuum vessel and is decompressed internally, a sample stage which is disposed in the processing chamber and on which a sample of a process target is disposed and held, and a plasma formation unit which forms plasma using process gas and processes the sample using the plasma, and the plasma processing device includes: a dielectric film which is disposed on a metallic base configuring the sample stage and connected to a ground and includes a film-like electrode supplied with high-frequency power internally; a plurality of elements which are disposed in a space in the base and have a heat generation or cooling function; and a feeding path which supplies power to the plurality of elements, wherein a filter to suppress a high frequency is not provided on the feeding path.

An upper electrode disclosed configures a shower head in a capacitively-coupled plasma processing apparatus. The upper electrode includes a first member and a first member. The first member includes a conductor. The first member provides a plurality of first holes. The plurality of first holes penetrate the first member. The second member includes a main body and a cover layer. The main body includes a conductor and is provided above the first member. The cover layer covers the surface of the main body. The second member provides one or more second holes. The secondary electron emission coefficient of the cover layer is smaller than 1.

A method and apparatus for reproducing a component of a semiconductor manufacturing apparatus, and a reproduced component are provided. The method may include a preparing step of preparing a damaged component of a semiconductor manufacturing apparatus, a first cleaning step of cleaning the damaged component, a masking step of masking at least one of areas including an undamaged part of the damaged component, a reproduced part forming step of forming a reproduced part on the damaged component using a chemical vapor deposition (CVD), a post-grinding step of grinding the damaged component with the reproduced part, and a second cleaning step of cleaning the damaged component with the reproduced part.

Disclosed is a plasma processing method for processing a workpiece that includes: a silicon-containing etching target layer, an organic film provided on the etching target layer, an antireflective film provided on the organic layer, and a first mask provided on the antireflective layer, using a plasma processing apparatus having a processing container. The plasma processing method includes: etching the antireflective film using plasma generated in the processing container and the first mask to form a second mask from the antireflective film; etching the organic film using plasma generated in the processing container and the second mask to form a third mask from the organic film; generating plasma of a mixed gas including the first gas and the second gas in the processing container; and etching the etching target layer using plasma generated in the processing container and the third mask.

A system and method for plasma enhanced deposition processes. An exemplary semiconductor manufacturing system includes a susceptor configured to hold a semiconductor wafer and a sector disposed above the susceptor. The sector includes a first plate and an overlying second plate, operable to form a plasma there between. The first plate includes a plurality of holes extending through the first plate, which vary in at least one of diameter and density from a first region of the first plate to a second region of the first plate.

Embodiments of the invention generally include shield frame assembly for use with a showerhead assembly, and a showerhead assembly having a shield frame assembly that includes an insulator that tightly fits around the perimeter of a showerhead in a vacuum processing chamber. In one embodiment, a showerhead assembly includes a gas distribution plate and a multi-piece frame assembly that circumscribes a perimeter edge of the gas distribution plate. The multi-piece frame assembly allows for expansion of the gas distribution plate without creating gaps which may lead to arcing. In other embodiments, the insulator is positioned to be have the electric fields concentrated at the perimeter of the gas distribution plate located therein, thereby reducing arcing potential.

A plasma processing apparatus includes a chamber, a substrate support, a radio-frequency power supply, and a controller. The substrate support includes a lower electrode and is disposed in the chamber to mount a focus ring to surround a disposed substrate on the substrate support. The radio-frequency power supply supplies a bias radio-frequency power to the lower electrode. The controller causes specifying a power level of the bias radio-frequency power corresponding to a specified value of the DC potential of the focus ring by using a table or a function that defines a relationship between the power level of the bias radio-frequency power and the DC potential of the focus ring generated by supplying the bias radio-frequency power to the lower electrode, and controlling the radio-frequency power supply to supply the bias radio-frequency power having the specified power level to the lower electrode during a plasma generation in the chamber.