A substrate support unit for thin film deposition on a substrate including a pattern structure and a thin film deposition apparatus including the substrate support unit includes a heater; an RF electrode; a first rod connected to the heater; a second rod connected to the RF electrode; and an RF shield spaced apart from the second rod, disposed to surround the second rod, and extending in an extension direction of the second rod.

A plasma processing method including: a film formation step of forming a silicon-containing film on a surface of a member inside a chamber by plasma of a silicon-containing gas and a reducing gas; a plasma processing step of plasma-processing a workpiece carried into the chamber by plasma of a processing gas after the silicon-containing film is formed on the surface of the member; and a removal step of removing the silicon-containing film from the surface of the member by plasma of a fluorine-containing gas after the plasma-processed workpiece is carried out of the chamber.

A plasma reactor for generating a plasma for use in depositing a thin film on a large area wafer, such as in the manufacturing of solar cells. A plasma electrode unit in the plasma reactor is divided into a plurality of discrete electrodes, and RF electric power is sequentially applied to the divided plasma electrodes in accordance with a predefined sequence of temporal intervals as controlled by a sequence control unit. The sequential application of RF power across the divided plasma electrode unit resolves a standing wave problem in the plasma applied over a large area corresponding to a large area wafer.

A plasma reactor for generating a plasma for use in depositing a thin film on a large area wafer, such as in the manufacturing of solar cells. A plasma electrode unit in the plasma reactor is divided into a plurality of discrete electrodes, and RF electric power is sequentially applied to the divided plasma electrodes in accordance with a phase angle detected by a phase control unit. The sequential application of high frequency RF power across the divided plasma electrode unit resolves a standing wave problem in the plasma applied over a large area corresponding to a large area wafer.

Systems and methods for managing electric power are disclosed. In an aspect, a system can comprise plasma disposed in a housing and a pair of helical electrodes disposed in the housing, wherein an electric current passing through the pair of electrodes induces a rotation in the plasma.

A plasma processing apparatus includes: a plasma processing chamber; a radio frequency power source; a sample stage on which a sample is mounted; an electrode which is arranged inside the sample stage and electrostatically chucks the sample; a DC power source which applies a DC voltage to the electrode; and a control device which controls an output voltage of the DC power source so that an electric potential difference between an electric potential of the sample and an electric potential of an inner wall of the plasma processing chamber is reduced to an electric potential difference within a predetermined range during interruption of plasma discharge.

Disclosed is a capacitively coupled plasma etching apparatus, wherein a lower electrode is fixed to a lower end of an electrically conductive supporting rod, a retractable electrically conductive part is fixed to the lower end of the electrically conductive supporting rod, wherein the retractable electrically conductive part being extended or retracted along an axial direction of the electrically conductive supporting rod; besides, the lower end of the retractable electrically conductive part is electrically connected with the output end of the radio-frequency matcher via an electrically connection portion, and the loop end of the radio-frequency matcher is fixed to the bottom of a chamber body. In this way, the height of the lower electrode may be controlled by extension or retraction of the retractable electrically conductive part, such that the distance between the upper and lower plates becomes adjustable; besides, the loop end of the radio-frequency matcher is fixed to the bottom of the chamber body, such that when the retractable electrically conductive part is axially extended or retracted, the movement of the electrically connection portion in the radial direction of the extractable electrically conductive part is reduced, not causing instability of the radio-frequency loop, thereby achieving stability of the radio-frequency loop while achieving adjustability of the plate distance.

A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.

A plasma CVD apparatus includes a plasma source connected to an alternating current power supply or two or more alternating current power supplies, configured to generate plasma; and a magnet array configured by a plurality of magnets. The plasma source has an electrode group, which is configured by arranging n electrodes (n being a positive even integer), in an order of electrode numbers. Each of the electrodes of the electrode group is connected to the alternating current power supply. An exit of a flow channel for a precursor gas is formed between adjacent electrodes of the electrode group. The magnet array is arranged so that a north pole or a south pole of each of the magnets is facing the plasma source. In the magnet array, for at least one pair of adjacent two magnets, poles facing the plasma source are arranged to be the same.

In one embodiment, a dual phase cleaning chamber may include a turbulent mixing chamber, a fluid diffuser, an isostatic pressure chamber and a rupture mitigating nozzle. The turbulent mixing chamber may be in fluid communication with a first fluid inlet and a second fluid inlet. The fluid diffuser may be in fluid communication with the turbulent mixing chamber. The rupture mitigating nozzle may include a first fluid collecting offset, a second fluid collecting offset, and a displacement damping projection. The displacement damping projection may be disposed between the first and second fluid collecting offset and may be offset away from each of the first fluid collecting offset and the second fluid collecting offset, and towards the fluid diffuser. A pressurized cleaning fluid introduced from the first fluid inlet, the second fluid inlet, or both flows through the outlet passage of the first and second fluid collecting offset.