A tunable edge sheath (TES) system includes a coupling ring configured to couple to a bottom surface of an edge ring that surrounds a wafer support area within a plasma processing chamber. The TES system includes an annular-shaped electrode embedded within the coupling ring. The TES system includes a plurality of radiofrequency signal supply pins coupled to the electrode within the coupling ring. Each of the plurality of radiofrequency signal supply pins extends through a corresponding hole formed through a bottom surface of the coupling ring. The TES system includes a plurality of radiofrequency signal filters respectively connected to the plurality of radiofrequency supply pins. Each of the plurality of radiofrequency signal filters is configured to provide a high impedance to radiofrequency signals used to generate a plasma within the plasma processing chamber.

Embodiments described herein relate to magnetic and electromagnetic systems and a method for controlling the density profile of plasma generated in a process volume of a PECVD chamber to affect deposition profile of a film. In one embodiment, a plurality of retaining brackets is disposed in a rotational magnetic housing of the magnetic housing systems. Each retaining bracket of the plurality of retaining brackets is disposed in the rotational magnetic housing with a distance d between each retaining bracket. The plurality of retaining brackets has a plurality of magnets removably disposed therein. The plurality of magnets is configured to travel in a circular path when the rotational magnetic housing is rotated around the round central opening.

A pedestal assembly including a pedestal for supporting a substrate. A central shaft positions the pedestal at a height during operation. A ring is placed along a periphery of the pedestal. A ring adjuster subassembly includes an adjuster flange disposed around a middle section of the central shaft. The subassembly includes a sleeve connected to the adjuster flange and extending from the adjuster flange to an adjuster plate disposed under the pedestal. The subassembly includes ring adjuster pins connected to the adjuster plate and extending vertically from the adjuster plate. Each of the ring adjuster pins being positioned on the adjuster plate at locations adjacent to and outside of a pedestal diameter. The ring adjuster pins contacting an edge undersurface of the ring. The adjuster flange coupled to at least three adjuster actuators for defining an elevation and tilt of the ring relative to a top surface of the pedestal.

Method for tuning a voltage setpoint for a multi-state pulsed RF signal in a plasma processing system, including: applying RF power from a first generator to an ESC, the RF power from the first generator defining a first multi-state pulsed RF signal; applying RF power from a second generator to an edge electrode that surrounds the ESC and is disposed below an edge ring that surrounds the ESC, the RF power from the second generator defining a second multi-state pulsed RF signal having a first state and a second state, wherein for each state of the second multi-state pulsed RF signal, the second generator automatically introduces a phase adjustment to substantially match phase with a corresponding state of the first multi-state pulsed RF signal; adjusting a voltage setpoint for the second state of the second multi-state pulsed RF signal to tune the phase adjustment to a target phase adjustment setting.

A method for adjusting a height of an edge ring arranged around an outer portion of a substrate support includes receiving at least one input indicative of one or more erosion rates of the edge ring. The at least one input includes a plurality of erosion rates for respective usage periods of a substrate processing system. The method further includes determining at least one erosion rate of the edge ring using the plurality of erosion rates for the respective usage periods, monitoring an overall usage of the edge ring and storing the overall usage of the edge ring in a memory, calculating an amount of erosion of the edge ring based on the determined at least one erosion rate and the overall usage of the edge ring, and adjusting the height of the edge ring based on the calculated amount of erosion to compensate for the calculated amount of erosion.

An edge ring for a substrate processing system includes an annular body and an annular channel disposed in the annular body circumferentially along an inner diameter of the annular body. The annular channel includes N distinct sections, where N is an integer greater than 1. The edge ring includes N injection ports arranged circumferentially on the annular body to respectively inject one or more gases into the N distinct sections of the annular channel. The edge ring includes a flange extending radially inwards from the inner diameter of the annular body. A plurality of slits is arranged in the flange. The slits are in fluid communication with the annular channel and extend radially inwards from the annular channel to deliver the one or more gases.

An apparatus for patterned processing includes a source of input gas, a source of energy suitable for generating a plasma from the input gas in a plasma region and a grounded sample holder configured for receiving a solid sample. The apparatus includes a mask arranged between the plasma region and the grounded sample holder, the mask having a first face oriented toward the plasma region and a second face oriented toward a surface of the solid sample to be processed, the mask including a mask opening extending from the first face to the second face, and an electrical power supply adapted for applying a direct-current bias voltage to the mask, and the mask opening being dimensioned and shaped so as to generate spatially selective patterned processing on the surface of the solid sample.

A substrate support includes an outer edge ring configured to be raised and lowered relative to the substrate support via one or more lift pins. The outer edge ring is further configured to interface with a guide feature extending upward from a middle ring of the substrate support. An inner edge ring is located radially inward of the outer edge ring and is configured to be raised and lowered, independently of the outer edge ring, relative to the substrate support via one or more lift pins.

The present invention provides a plasma generating system that includes: a waveguide; a plasma cavity coupled to the waveguide and configured to generate a plasma therewithin by use of microwave energy; a hollow cylinder protruding from a wall of the waveguide and having a bottom cap that has an aperture; a detection unit for receiving the light emitted by the plasma through the aperture and configured to measure intensities of the light in an ultraviolet (UV) range and an infrared (IR) range; and a controller for controlling the detection unit.

An improved cathodic arc source and method of DLC film deposition with a carbon containing directional-jet plasma flow produced inside of cylindrical graphite cavity with depth of the cavity approximately equal to the cathode diameter. The generated carbon plasma expands through the orifice into ambient vacuum resulting in plasma flow strong self-constriction. The method represents a repetitive process that includes two steps: the described above plasma generation/deposition step that alternates with a recovery step. This step provides periodical removal of excessive amount of carbon accumulated on the cavity wall by motion of the cathode rod inside of the cavity in direction of the orifice. The cathode rod protrudes above the orifice, and moves back to the initial cathode tip position. The said steps periodically can be reproduced until the film with target thickness is deposited. Technical advantages include the film hardness, density, and transparency improvement, high reproducibility, long duration operation, and particulate reduction.