A plasma processing apparatus includes a microwave output unit, a wave guide tube, a tuner, a demodulation unit, and a calculation unit. The microwave output unit outputs a microwave having power corresponding to setting power while frequency-modulating the microwave in a setting frequency range. The wave guide tube guides the microwave to an antenna of a chamber main body. The tuner is provided in the wave guide tube and adjusts a position of a movable plate. The demodulation unit is provided in the wave guide tube, and acquires travelling wave power and reflected wave power for each frequency. The calculation unit calculates a frequency at which a reflection coefficient, which is calculated on the basis of the travelling wave power and the reflected wave power, for each frequency becomes a minimum point as an absorption frequency.

An assembly provided with a coolant flow channel includes a base in which the coolant flow channel is formed; and a protrusion component that is disposed in the coolant flow channel, wherein the protrusion component is liftable or rotatable.

Embodiments of the present disclosure generally relate to substrate supports for process chambers and RF grounding configurations for use therewith. Methods of grounding RF current are also described. A chamber body at least partially defines a process volume therein. A first electrode is disposed in the process volume. A pedestal is disposed opposite the first electrode. A second electrode is disposed in the pedestal. An RF filter is coupled to the second electrode through a conductive rod. The RF filter includes a first capacitor coupled to the conductive rod and to ground. The RF filter also includes a first inductor coupled to a feedthrough box. The feedthrough box includes a second capacitor and a second inductor coupled in series. A direct current (DC) power supply for the second electrode is coupled between the second capacitor and the second inductor.

A plasma etching method using a Faraday cage, which effectively produces a blazed grating pattern.

A member for semiconductor manufacturing apparatus has a ceramic plate, a porous plug, an insulating lid, and pores. The ceramic plate has a wafer placement surface as an upper surface. The porous plug is disposed in a plug insertion hole penetrating the ceramic plate in an up-down direction, and allows a gas to flow. The insulating lid is provided in contact with an upper surface of the porous plug, and exposed to the wafer placement surface. A plurality of pores are provided in the insulating lid, and penetrate the insulating lid in an up-down direction.

Disclosed herein are embodiments of a servo-control system comprising at least one pneumatic actuator comprising a movable member, at least one proportional pneumatic valve configured to control fluid flow between the at least one pneumatic actuator and a pressurized fluid supply or a vent, a plurality of pressure sensors each configured to independently measure pressure in a respective supply line to the at least one pneumatic actuator, at least one position sensor configured to measure a position of the moveable member, and a controller. The controller is configured to determine a control signal based at least in part on pressure measurements of the plurality of pressure sensors and a position measurement of the at least one position sensor, and apply the control signal to at least one proportional pneumatic valve to move the movable member to a target position.

The present disclosure relates to a fixture, the fixture is a fixture for a semiconductor etching machine, and the fixture includes: a support mechanism, configured to be arranged on an outer base of an electrostatic chuck of the semiconductor etching machine; a cleaning mechanism, being rotatably arranged on the support mechanism; and at least one cleaning unit, being arranged on the cleaning mechanism.

A white light illumination source can illuminate a region of a substrate to be plasma etched with an incident light beam. A camera takes successive images of the region being illuminated during a plasma etch process. Image processing techniques can be applied to the images so as to identify a location of at least one feature on the substrate and to measure a reflectivity signal at the location. The plasma etch process can be modified in response to the measured reflectivity signal at the location.

Methods of cleaning a substrate support comprise: introducing a cleaning gas into a processing chamber containing the substrate support; applying a radio frequency (RF) power to a remote plasma source that is in fluid communication with the processing chamber to establish a reactive etching plasma from the cleaning gas in the processing chamber; reacting deposits on the substrate support with the reactive etching plasma to form a by-products phase; and evacuating the by-products phase from the processing chamber.

A method of processing includes directing an electron beam comprising ballistic electrons from an electron source towards a peripheral region of a substrate to be processed. The peripheral region surrounds a central region of the substrate. The electron beam may be directed such that the ballistic electrons impinge on the peripheral region and not on the central region of the substrate. The ballistic electrons may stimulate chemical reactions on the substrate. The method may include placing the substrate on a substrate holder disposed within a vacuum chamber. The method may also include generating the electron beam from a plasma in the vacuum chamber. The method may further include processing the substrate with ions from the plasma.