According to one embodiment, an electrostatic chuck includes a ceramic dielectric substrate, a base plate, and first and second electrode layers. The ceramic dielectric substrate includes first and second major surfaces. The first and second electrode layers are provided inside the ceramic dielectric substrate. The second electrode layer is provided between the first electrode layer and the first major surface. The first electrode layer includes first and second portions. The first portion is positioned more centrally of the ceramic dielectric substrate than is the second portion. The first portion includes first and second surfaces. The second portion includes third and fourth surfaces. The third surface is positioned between the first surface and the second electrode layer. An electrical resistance of the first surface is greater than an average electrical resistance of the first portion.

A coating apparatus and movable electrode arrangement, movable support arrangement, and application thereof are disclosed. The coating apparatus includes a reactor chamber body and a movable support arrangement. The reactor chamber body has a reactor chamber. The movable support arrangement is received in the reactor chamber and includes one or more electrodes and a movable support. The movable support is adapted for rotating relative to the reactor chamber body. At least one of the electrodes is arranged on the movable support so as for rotating together with the movable support. One or more workpieces to be coated are adapted for being held on the movable support to move together with the movable support.

In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.

A lift pin assembly for a lift pin of a plasma processing apparatus is provided. The lift pin assembly includes a pin housing defining an opening into which a lift pin extends. The pin housing is positioned such that the opening is aligned with an opening defined by an electrostatic chuck. The assembly includes a pin height adjustment member partially positioned within the opening defined by the pin housing. The pin height adjustment member is movable along an axis in a first direction and a second direction to move the lift pin into and out of the opening defined by the electrostatic chuck. The assembly includes a pin holder assembly at least partially positioned within an opening defined by the pin height adjustment member. The pin holder assembly is configured to hold the lift pin such that the lift pin is aligned with the opening defined by the electrostatic chuck.

Wafer bonding apparatus and method are provided. A method includes performing a first plasma activation process on a first surface of a first wafer. The first plasma activation process forms a first high-activation region and a first low-activation region on the first surface of the first wafer. A first cleaning process is performed on the first surface of the first wafer. The first cleaning process forms a first plurality of silanol groups in the first high-activation region and the first low-activation region. The first high-activation region includes more silanol groups than the first low-activation region. The first wafer is bonded to a second wafer.

Exemplary semiconductor substrate supports may include a pedestal shaft. The semiconductor substrate supports may include a platen. The platen may define a fluid channel across a first surface of the platen. The semiconductor substrate supports may include a platen insulator positioned between the platen and the pedestal shaft. The semiconductor substrate supports may include a conductive puck coupled with the first surface of the platen and configured to contact a substrate supported on the semiconductor substrate support. The semiconductor substrate supports may include a conductive shield extending along a backside of the platen insulator and coupled between a portion of the platen insulator and the pedestal shaft.

A machine and a wafer processing apparatus are provided; the machine includes a body and an adjustment part. The body is configured to bear a wafer; the adjustment part is disposed in the body, and the adjustment part uses a vacuum suction to adjust a levelness of an in-process wafer.

An electrostatic chuck device includes: an electrostatic chuck plate having a dielectric substrate having a placement surface on which a wafer is placed and an adsorption electrode positioned in the dielectric substrate; a metal base supporting the electrostatic chuck plate from a back surface side opposite to the placement surface; and a focus ring installed on an outer peripheral portion of the electrostatic chuck plate and surrounding the placement surface. The electrostatic chuck plate has a ring adsorption region which is adsorbed to the focus ring and is located on a surface positioned on the same side as the placement surface and has a base adsorption region which is adsorbed to the metal base and located on a back surface opposite to the placement surface.

Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.

A substrate processing system includes a vacuum transfer module; a plasma process module; a transfer robot in the vacuum transfer module; a stage in the plasma process module; a first ring disposed on the stage and a second ring disposed on the first ring to surround a substrate that is placed on the stage, the second ring having an inner diameter smaller than an inner diameter of the first ring; actuators to move support pins vertically to raise the first and the second rings and a transfer jig; and a controller configured to selectively execute a simultaneous transfer mode in which the transfer robot is caused to simultaneously transfer the first ring and the second ring and a sole transfer mode in which the transfer robot is caused to transfer only the second ring.