A film forming method includes: preparing a substrate having a recess within a processing container; forming a silicon-containing film on the substrate by activating a silicon-containing gas with plasma and supplying the activated silicon-containing gas to the substrate; partially modifying the silicon-containing film after the silicon-containing film closes an opening of the recess; and selectively etching the modified silicon-containing film.

An apparatus for coating a PET container in a coating chamber includes a lance that introduces material and energy into the container while it is in the coating chamber. This results in a reaction that coats the bottle's interior with a silicon oxide. Before reaching the coating chamber, the bottle will have passed through a cooling system connected to coating chamber. The cooling system passes cooled gas through a feed, thereby cooling said bottle before it reaches the coating chamber.

An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

The present invention relates to a device for processing a component, comprising: a travel carriage having a frame which defines an axis of translation along which the travel carriage is translationally movable, a bogie which is relatively rotatably connected to the frame and to which the component is attachable, a first translation-permanent magnet device which is mounted on the frame and having permanent magnets, a rotation-permanent magnet device attached to the bogie and having permanent magnets, and a carriage-side longitudinal guide means mounted on the frame, a stationary travel carriage guide device having a guide-side longitudinal guide means, a first electromagnet translation device with electromagnets which magnetically interact with the permanent magnets of the first translation-permanent magnet device, a first rotation-electromagnet device having electromagnets which magnetically interact with the permanent magnets of the rotation-permanent magnet device, and a controller connected to the first translating electromagnet device and to the first rotation-electromagnet device to control its electromagnets to control the translational movement of the travel carriage and the rotational movement of the bogie.

The disclosure relates to a substrate processing apparatus, comprising: a first reactor constructed and arranged to process a rack with a plurality of substrates therein; a second reactor constructed and arranged to process a substrate; and, a substrate transfer device constructed and arranged to transfer substrates to and from the first and second reactor. The second reactor may be provided with an illumination system constructed and arranged to irradiate ultraviolet radiation within a range from 100 to 500 nanometers onto a top surface of at least a substrate in the second reactor.

A substrate processing method includes preparing a substrate including an etching target film and a mask; etching the etching target film through the mask by plasma; and heat-treating the substrate at a preset temperature after the etching of the etching target film.

An apparatus for forming a film on a substrate includes: a processing container in which a reaction gas is supplied to a surface of the substrate; a stage installed in the processing container, configured to place the substrate and including a heater; a lifting shaft connected to an external lifting mechanism via a through port formed in the processing container; a casing installed between the processing container and the lifting mechanism and covering the lifting shaft; a lid member disposed to surround the lifting shaft with a gap interposed between the lifting shaft and the lid member, and installed in the processing container; a purge gas supplier configured to supply a purge gas into the casing; and a guide member disposed at a position facing the gap that opens toward an interior of the processing container and including a guide surface configured to guide the purge gas.

Described herein is a technique capable of cleaning a surrounding structure of a substrate placing surface in an apparatus. According to one aspect of the technique, there is provided a substrate processing apparatus including: a process chamber in which a substrate is processed; a substrate mounting plate provided with a substrate non-placing surface and a plurality of substrate placing surfaces; a rotator configured to rotate the substrate mounting plate; a plasma generator configured to generate plasma such that a plasma density over the substrate non-placing surface is higher than a plasma density over the plurality of the substrate placing surfaces; a process gas supplier configured to supply a process gas into the process chamber; a cleaning gas supplier configured to supply a cleaning gas into the process chamber; and a heater placed below the substrate mounting plate.

A substrate processing system includes a hinge assembly configured to allow a substrate support and an RF bias assembly to slide, from a docked position to an undocked position, relative to other components of a processing chamber. A make-break connector is configured to supply fluid to at least one of the substrate support and the RF bias assembly. The make-break connector includes a first portion including a first fluid passage connected to a first conduit. A second portion includes a second fluid passage connected to a second conduit. The first fluid passage in the first portion fluidly communicates with the second fluid passage in the second portion. The first portion is configured to slide with the substrate support and the RF bias assembly relative to the second portion and the other portions of the processing chamber. The first portion is located inwardly relative to the second portion.

Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.