In a known plasma-chemical coating apparatus, a plasma chamber is provided within which at least one linear antenna is arranged for producing a plasma by means of electromagnetic power, in which a supply for a carrier gas terminates and which comprises a plasma exit opening in the direction of a treatment chamber for a plasma-assisted modification of a substrate. Starting from this, to achieve cleaning cycles as in coating apparatuses with comparatively slow coating processes, it is suggested according to the invention that the plasma exit opening is configured as an elongated narrowing and defined preferably on both sides by cylinders which extend in parallel with each other and are rotatable about their cylinder axis, and that a cleaning zone is respectively provided for each of the cylinders, into which an area of the outer surface of the respective cylinder which is to be cleaned can be introduced by rotation about the cylinder axis.

In an inductively-coupled plasma torch unit, a coil, a first ceramic block, and a second ceramic block are arranged parallel to one another, and an elongated chamber has an annular shape. Plasma generated inside the chamber is ejected toward a substrate through an opening portion in the chamber. The substrate is processed by relatively moving the elongated chamber and the substrate in a direction perpendicular to a longitudinal direction of the opening portion. A rotating ceramic pipe having a cylindrical shape is provided so as to cause a refrigerant to flow into a cavity formed inside the ceramic pipe. Accordingly, it becomes possible to apply greater high-frequency power, thereby enabling fast plasma processing.

Embodiments of the present disclosure provide methods for conditioning a plasma processing chamber to maintain a reliable and predicable processing conditions while performing a oxide removal process on a substrate. In one embodiment, a method for conditioning a plasma processing chamber includes supplying a first gas mixture including an inert gas into a processing chamber a first period of time in absent of a substrate, supplying a second gas mixture including an inert gas, a hydrogen containing gas and a halogen containing gas for a second period of time in absent of the substrate, and supplying a third gas mixture including an inert gas and a hydrogen containing gas for a third period of time in absent of the substrate in the processing chamber.

Embodiments of the present disclosure provide methods for conditioning a plasma processing chamber to maintain a reliable and predicable processing conditions while performing a oxide removal process on a substrate. In one embodiment, a method for conditioning a plasma processing chamber includes supplying a first gas mixture including an inert gas into a processing chamber a first period of time in absent of a substrate, supplying a second gas mixture including an inert gas, a hydrogen containing gas and a halogen containing gas for a second period of time in absent of the substrate, and supplying a third gas mixture including an inert gas and a hydrogen containing gas for a third period of time in absent of the substrate in the processing chamber.

A plasma processing apparatus 1 includes a chamber 10, a mounting table 16, a focus ring 24a, a first electrode plate 36 and a second electrode plate 35. The focus ring 24a is provided around the mounting table 16 to surround a mounting surface of the mounting table 16. The first electrode plate 36 is provided above the mounting table 16. The second electrode plate 35 is provided around the first electrode plate 36 to surround the first electrode plate 36 and is insulated from the first electrode plate 36. The plasma processing apparatus 1, in a first process, performs a preset processing on a semiconductor wafer W mounted on the mounting surface with plasma generated within the chamber, and, in a second process, increases an absolute value of a negative DC voltage applied to the second electrode plate 35 depending on an elapsed time of the first process.

A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the upper chamber region and the lower chamber region and includes a plate with a plurality of holes. A cooling plenum cools the gas distribution device and a purge gas plenum directs purge gas into the lower chamber. A surface to volume ratio of the holes is greater than or equal to 4. A controller selectively supplies an etch gas mixture to the upper chamber and a purge gas to the purge gas plenum and strikes plasma in the upper chamber to selectively etch a layer of the substrate relative to at least one other exposed layer of the substrate.

A film forming apparatus includes: first and second processing gas supply parts configured to supply first and second processing gases, respectively; a plasma-generating gas supply part configured to supply a plasma-generating gas; a plasma forming part configured to convert the plasma-generating gas into plasma; a receiving vessel inserted into an opening formed in a ceiling portion of a vacuum vessel, the receiving vessel having a bottom surface portion facing a rotary table and being engaged with the plasma forming part on an upper surface of the bottom surface portion; a dielectric shield member arranged between the receiving vessel and an inner peripheral surface of the opening; a height adjustment part configured to adjust an arrangement height position of the bottom surface portion; and one or more sealing parts configured to hermetically close a space between the vacuum vessel and the receiving vessel.

Semiconductor processing systems and system components are described. The system components include a chamber lid of a semiconductor processing chamber that includes a dielectric material having a substantially disk shape and integrating a lid portion and a gas delivery nozzle portion into a single structure. The chamber lid includes a plurality of gas flow paths that each traverse a region of the chamber lid from an input location at a first surface of the chamber lid to a respective output location on a different surface of the chamber lid and through which etch gases are distributed to particular portions of a processing region of the processing chamber.

An etching device and an etching method. The etching device includes an etching chamber and a chuck located therein for clamping a substrate to be etched, a plasma generating device surrounding the etching chamber in an area and a gas nozzle distribution device for introducing etching gas, which is situated above the chuck in such a way that an etching gas stream is directed essentially perpendicular to a surface of the substrate to be etched. A moving mechanism may be used to change the distance between the gas nozzle distribution device and the chuck as a function of the etching mode.

An apparatus and method of manufacture of an extreme ultraviolet reflective element includes: a substrate; a multilayer stack on the substrate, the multilayer stack includes a plurality of reflective layer pairs having a first reflective layer formed from silicon and a second reflective layer formed from niobium or niobium carbide for forming a Bragg reflector; and a capping layer on and over the multilayer stack for protecting the multilayer stack by reducing oxidation and mechanical erosion.