A controller for adjusting a height of an edge ring in a substrate processing system includes an edge ring wear calculation module configured to receive at least one input indicative of one or more erosion rates of the edge ring, calculate at least one erosion rate of the edge ring based on the at least one input, and calculate an amount of erosion of the edge ring based on the at least one erosion rate. An actuator control module is configured to adjust the height of the edge ring based on the amount of erosion as calculated by the edge ring wear calculation module.

A plasma processing apparatus and method with an improved processing yield, the plasma processing apparatus including detector configured to detect an intensity of a first light of a plurality of wavelengths in a first wavelength range and an intensity of a second light of a plurality of wavelengths in a second wavelength range, the first light being obtained by receiving a light which is emitted into the processing chamber from a light source disposed outside the processing chamber and which is reflected by an upper surface of the wafer, and the second light being a light transmitted from the light source without passing through the processing chamber; and a determination unit configured to determine a remaining film thickness of the film layer by comparing the intensity of the first light corrected using a change rate of the intensity of the second light.

A method of optimizing a recipe for a plasma process includes (a) building a virtual metrology (VM) model that predicts a wafer characteristic resulting from the plasma process based on a plasma parameter and (b) building a control model that describes a relationship between the plasma parameter and a recipe parameter. (c) The wafer characteristic is measured after performing the plasma process according to the recipe. (d) Whether the wafer characteristic is within a predetermined range is determined. (e) The VM model and the control model are calibrated based on the wafer characteristic. (f) The recipe is optimized by updating the plasma parameter based on the wafer characteristic using the VM model and updating the recipe parameter based on the plasma parameter using the control model. (c), (d), (e) and (f) are repeated until the wafer characteristic is within the predetermined range.

A power supply control system includes a power generator for providing a signal to a load. The power generator includes a power controller controlling a power amplifier. The power generator includes an adaptive controller for varying the output signal controlling the power amplifier. The adaptive controller compares an error between a measured output and a predicted output to determine adaptive values applied to the power controller. The power generator also includes a sensor that generates an output signal that is digitized and processed. The sensor signal is mixed with a constant K. The constant K is varied to vary the processing of the sensor output signal. The value K may be commutated based on the phase, frequency, or both phase and frequency, and the bandwidth of K is determined by coupled power in the sensor output signal.

In a plasma processing apparatus, occurrence of unplanned maintenance is predicted in advance so that a time when the work should be incorporated into planned maintenance can be determined. An apparatus diagnostic apparatus including a degradation score estimation unit that receives an output of a sensor mounted on a plasma processing apparatus and estimates a degradation score of the plasma processing device; a maintenance work occurrence probability estimation unit that calculates a probability of occurrence of an unplanned maintenance work that is not included in an original maintenance plan based on the degradation score; an actual maintenance cost calculation unit that calculates an actual maintenance cost; and a plan incorporated maintenance cost calculation unit that outputs a correction plan of maintenance plan in which the original maintenance plan is corrected by incorporating the unplanned maintenance work based on the probability of occurrence of the unplanned maintenance work.

The disclosure relates to a method of determining a velocity profile for the movement of a substrate to be coated relative to a coating source.

A method of reducing reflected Radio Frequency (RF) power in substrate processing chambers may include accessing input parameters for a processing chamber that are derived from a recipe to perform a process on a substrate. The input parameters may be provided to a model that has been trained using previous input parameters and corresponding sensor measurements for the chamber. A predicted amount of reflected RF power may be received from the model and it may be determined whether the predicted reflected RF power is optimized. The input parameters may be repeatedly adjusted and processed by the model until input parameter values are found that optimize the reflected RF power. Optimized input parameters may then be provided to the chamber to process the substrate.

A non-transitory computer-readable storage medium stores instructions, which when executed by a processing device of a diagnostic server, cause the processing device to perform certain operations. The operations include receiving, from a processing chamber, (i) measurement values of a combined signal that is based on an injection of an alternating signal wave onto a first output signal of a controller of the processing chamber, and (ii) measurement values of a second output signal of the controller that incorporates feedback from the processing chamber. The operations further include generating, based on the measurement values of the combined signal and the measurement values of the second output signal of the controller, a baseline bode fingerprint pertaining to a state associated with the processing chamber. The operations further include storing, in computer storage, the baseline bode fingerprint to be used in performing diagnostics of the processing chamber.

Capacitive sensors and capacitive sensing data integration for plasma chamber condition monitoring are described. In an example, a plasma chamber monitoring system includes a plurality of capacitive sensors, a capacitance digital converter, and an applied process server coupled to the capacitance digital converter, the applied process server including a system software. The capacitance digital converter includes an isolation interface coupled to the plurality of capacitive sensors, a power supply coupled to the isolation interface, a field-programmable gate-array firmware coupled to the isolation interface, and an application-specific integrated circuit coupled to the field-programmable gate-array firmware.

A system and method including a processing device. The processing device receives data including one or more plasma exposure durations of a plasma process. The plasma exposure duration are associated with a set of controlled elements. The processing device causes a each set of controlled elements to switch between a first mode of operation and a second mode of operation. Each set of controlled elements expose appropriate portion of a substrate to the plasma related fluxes. The first set of controlled elements process the substrate at an increased rate while operating in the first mode of operation relative to the second mode of operation. The processing device causes each set of controlled elements to operate in the first mode of operation for the appropriate time duration based on the received plasma exposure duration data.