Various illustrative aspects are directed to a system. The system comprises a setpoint waveform streaming progenitor module, configured to receive inputs indicative of a desired setpoint waveform, and to output a data package based at least in part on the inputs indicative of the desired setpoint waveform, wherein the data package comprises a plurality of points, an interpolation method, and one or more interpolation parameters. The system further comprises a setpoint waveform streaming processing module, configured to receive the data package from the setpoint waveform streaming progenitor module, and to output a streaming setpoint waveform based at least in part on the data package.

Measuring a plasma state using a probe device in the case of performing plasma processing on a substrate by introducing process gas into a processing container accommodating the substrate and by producing pulsed plasma using an electromagnetic wave pulse obtained by processing an electromagnetic wave generated from an electromagnetic wave oscillator using a pulsing device. An AC voltage to the pulsed plasma is applied via the probe device; transmitting a signal from the pulsed plasma based on the AC voltage via the probe device and measuring data including a current value; and obtaining a state of the pulsed plasma by analyzing the measured data. The frequency of the AC voltage deviates from a frequency of the electromagnetic wave pulse so that the number of data required for the measurement of the pulsed plasma within one cycle of the electromagnetic wave pulse is obtained within allowable time.

A fabrication system for fabricating an IC is provided which includes a processing tool, a computation device and a FDC system. The processing tool includes an electrode and an RF sensor to execute a semiconductor manufacturing process to fabricate the IC. The RF sensor wirelessly detects the intensity of the RF signal. The computation device extracts statistical characteristics based on the detection of the intensity of the RF signal. The FDC system determines whether or not the intensity of the RF signal meets a threshold value or a threshold range according to the extracted statistical characteristics. When the detected intensity of the RF signal exceeds the threshold value or the threshold range, the FDC system notifies the processing tool to adjust the RF signal or stop tool to check parts damage.

A target value of magnetic flux density and magnetic flux density actually obtained are made to coincide precisely with each other. An electromagnet control device comprises a current value determining unit for determining, based on a magnetic flux density instruction value, a value of current that is made to flow through a coil. The current value determining unit is constructed to execute a second process for determining, based on a second function, a value of the current, if the magnetic flux density is to be decreased from that in a first magnetization state, and a fourth process for expanding or reducing the second function by use of a first scaling ratio for transforming it to a fourth function, and determining, based on the fourth function obtained after above transformation, a value of the current, if the magnetic flux density is to be decreased from that in a third magnetization state.

A plasma treatment chamber comprises one or more sidewalls. A support surface within the one or more sidewalls holds a workpiece. A first gas injector along the one or more sidewalls injects a first gas flow in a first direction generally parallel to and across a surface of the workpiece. A first pump port along the one or more sidewalls generally opposite of the first gas injector pumps out the first gas flow. A second gas injector along the one or more sidewalls injects a second gas flow in a second direction generally parallel to and across the surface of the workpiece. A second pump port along the one or more sidewalls generally opposite of the second gas injector pumps out the second gas flow. Conductance control rings modulate conductance of the pump ports and are located proximate to plasma screens at a top of the pump ports.

Various embodiments herein relate to methods, apparatus, and systems for depositing a boron-based ceramic film on a substrate. Advantageously, the boron-based ceramic films described herein can be formed at relatively low temperatures (e.g., about 600C or less), while still achieving very high quality materials that exhibit good mechanical strength (e.g., high hardness and Young's modulus), good etch selectivity, amorphous morphology, etc. The films herein also have low hydrogen content, low oxygen content, and low halide content. In many cases, the films may be formed through a reaction between a boron halide and a saturated or unsaturated hydrocarbon, in the presence of plasma.

A substrate processing system includes: an acquiring unit that acquires a plurality of types of time-series data for each time when a plasma processing is performed on a substrate; a learning unit that generates a number of learned abnormal value detection models corresponding to a number of the plurality of types of the time-series data by calculating a data density of each of the plurality of types of time-series data acquired in a first phase; and a quantification unit that quantifies a state in a processing space in a second phase by inputting the plurality of types of time-series data acquired in the second phase into the corresponding learned abnormal value detection models, respectively, and calculating a divergence degree from the plurality of types of the time-series data acquired in the first phase.

The present disclosure provides a non-transitory computer-readable storage medium storing a control program of a plasma processing apparatus which performs a plasma processing by supplying a source power to a plasma generator and supplying a bias power to a stage that places a processing target substrate thereon. The control program causes a computer to execute a process including: monitoring a peak-to-peak voltage value of the source power or the bias power; and correcting the source power supplied to the plasma generator and the bias power supplied to the stage according to a fluctuation of the peak-to-peak voltage value, to make the monitored peak-to-peak voltage value approach an initial set value while fixing a ratio of the source power and the bias power.

Disclosed is an abnormality determination system for plasma treatment, including: a plasma treatment apparatus capable of treating, based on a recipe, a plurality of workpieces at a time; a sensor that obtains at least one monitoring data relating to the workpieces and the plasma treatment apparatus that is performing plasma treatment; a storage unit that stores a threshold that is set according to a first treatment mode including the number and the type of the workpieces; and a determination unit that determines, based on the monitoring data and the threshold, whether or not there is an abnormality in the plasma treatment.

A disclosed plasma processing system 10 includes: a plasma processing apparatus 100 including a processing chamber 100a for plasma processing an object 400 to be processed, and at least one component 122, 131 which is at least partially disposed in the processing chamber 100a; a storage unit 301 for storing a recipe including a set value specifying a plasma processing condition; a tolerance determination unit 302 that determines a tolerance of the set value, based on a degree of deterioration of the at least one component 122, 131; and a recipe modification unit 303 that modifies the recipe such that the set value falls within the tolerance, when the set value is outside the tolerance.