Embodiments of this disclosure describe a feedback loop that can be used to maintain a nearly constant sheath voltage and thus creating a mono-energetic IEDF at the surface of the substrate. The system described herein consequently enables a precise control over the shape of IEDF and the profile of the features formed in the surface of the substrate.

A method for detecting radicals in process gases in a semiconductor fabrication assembly is provided where the semiconductor fabrication includes a plasma source and a mass spectrometer with an ion source. The method includes separating ions from the process gases and determining a fixed electron energy in which to measure the process gases. Process gases in the semiconductor fabrication assembly are continuously sampled. A first measurement is performed on the sampled process gases at the electron energy using the mass spectrometer, where the first measurement is performed with the plasma source off. A second measurement of the sampled process gases is performed at the fixed electron energy using the mass spectrometer, where the second measurement is performed with the plasma source on. An amount of a radical present in the sampled process gases is determined as a difference between the second measurement and the first measurement.

A controller for a plasma generation system includes a model evaluation module receives a sensed value that varies in accordance with a state of a plasma controlled by a RF power generator. The model evaluation module generates a plasma parameter that varies in accordance with the sensed value. A model integration module receives the plasma parameter, integrates the plasma parameter, and outputs an integrated model parameter. An IEDF evaluation module receives the integrated model parameter and generates an ion energy distribution function (IEDF) in accordance with the integrated model parameter. An IEDF controller module receives the IEDF and generates a signal for controlling a RF generator. A RF generator control module receives the signal and generates an RF generator control signal to control at least one of power, frequency, or phase of the RF power generator.

Generators and methods for igniting a plasma in a plasma chamber are disclosed. The generator includes an ignition profile generator that includes a data interface configured to receive a voltage value and a time value for each of N data points and an ignition data generator configured to create an ignition profile from the N data points. The generator also includes an ignition profile datastore to store the ignition profile and a waveform generator configured to apply a waveform with the ignition profile to an output of the generator.

The invention provides a system and method for measuring a characteristic of a plasma or a plasma chamber, wherein the plasma chamber has a viewport or a surface which is permeable to electromagnetic radiation such that at least a portion of the electromagnetic radiation emitted by the plasma in the plasma chamber passes through the viewport, the method comprising providing the antenna of a Radio Emission Spectroscopy, RES, plasma bulk system externally to the plasma chamber to absorb at least a portion of the electromagnetic radiation that has passed through the viewport and configured to measure signals in the near-field E- and B-field regions; measuring a first value based on the signal induced in the antenna wherein the signal is obtained from a plurality of powered RF electrodes configured to be independently modulated with one or more power sources; and calculating a second value indicative of a change of magnitude of the characteristic based on a change of magnitude of the first value, wherein the characteristic is plasma power and/or plasma pressure.

Provided is a generator including a power amplifier, at least one sampler, an RF output, a signal generator, a controller including a digital control portion and an analogue control portion, an analogue feedback path between the at least one sampler and the controller enabling an analogue signal representation of a signal to be provided to the controller, and a digital feedback path between the at least one sampler and the controller enabling a digital signal representation of the signal to be provided to the controller. The controller is configured to adjust the RF signal at the RF output from a first state into a second state based on the analogue signal representation and/or the digital signal representation.

Systems and methods for simulating a plasma etch process are disclosed. According to certain embodiments, a method for simulating a plasma etch process may include predicting a first characteristic of a particle of a plasma in a first scale based on a first plurality of parameters; predicting a second characteristic of the particle in a second scale based on a modification of the first characteristic caused by a second plurality of parameters; and simulating an etch characteristic of a feature based on the first and the second characteristics of the particle. A multi-scale physical etch model or a multi-scale data driven model may be used to simulate the plasma etch process.

A device for synchronizing a periodic high frequency power signal (18) and an external reference signal (10). The device comprises a phase control circuit (100) and a digital oscillator circuit (130). The digital oscillator circuit (130) is connected to the phase control circuit (100). The digital oscillator circuit (130) comprises means for generating the periodic high frequency power signal (18) dependent on the control signal from the phase control circuit. The phase control circuit (100) is configured to determine a phase difference of the periodic high frequency power signal (18) and the external reference signal (10).

A method of manufacturing a semiconductor device includes preparing etched mapping data by measuring an etching amount of a wafer subjected to an etching process, determining an error region in which the etching amount of the wafer is outside of a reference value, based on the etched mapping data, compensating distribution of an electrical field applied to the wafer, and compensating exhaust distribution of a process gas, changed by the compensating distribution of an electrical field.

Plasma processing apparatus and methods are disclosed. In one example implementation, a plasma processing apparatus can include a processing chamber. The apparatus can include a pedestal located in the processing chamber configured to support a workpiece during processing. The apparatus can include a dielectric window forming at least a portion of the processing chamber. The apparatus can include an inductive coupling element located proximate the dielectric window. The inductive coupling element can be configured to generate a plasma in the processing chamber when energized with RF energy. The apparatus can include a Faraday shield located between the inductive coupling element and the processing chamber. The apparatus can include at least one temperature control element in thermal communication with the Faraday shield.