Provided is a structure variable type of a plasma source coil and a method for controlling the same. The plasma source coil comprises a plurality of coil branches extending in a spiral shape based on a central part, wherein at least one coil branch has a structure in which the extending direction or a tilting level can be adjusted.

Systems, methods and apparatus for regulating ion energies in a plasma chamber and chucking a substrate to a substrate support are disclosed. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis.

An apparatus and a method for surface coating by means of grid control and plasma-initiated gas-phase polymerization. The method comprises: dividing a vacuum chamber into a discharging cavity (2) and a processing chamber (3) by using a metal grid mesh (1), the metal grid mesh (1) being insulated from the vacuum chamber; separately feeding carrier gas and monomer steam into the discharging cavity (2) and the processing chamber (3) through different pipes (4, 5), putting a substrate to be processed (11) in the processing chamber (3), and generating in the discharging cavity (2) plasma that continuously discharges; and applying pulse positive bias to the metal grid mesh (1), to release the plasma into the processing chamber (3) to initiate monomer polymerization.

In one embodiment, a method of matching an impedance is disclosed. An impedance matching network is coupled between a radio frequency (RF) source and a plasma chamber. The matching network includes a variable reactance element (VRE) having different positions for providing different reactances. The RF source has an RF source control circuit carrying out a power control scheme to control a power delivered to the matching network. Based on a determined parameter, a new position for the VRE is determined to reduce a reflected power at the RF input of the matching network. The matching network provides a notice signal to the RF source indicating the VRE will be altered. In response to the notice signal, the RF source control circuit alters the power control scheme. While the power control scheme is altered, the VRE is altered to the new position.

A high frequency generator having dual outputs comprises: a high frequency amplifying unit configured to amplify a DC voltage of a predetermined level, and output a first and a second high frequency amplification signal; a combiner configured to combine the first high frequency amplification signal and the second high frequency amplification signal, and output a high frequency power signal; a high frequency sensor disposed on output side of the combiner, configured to detect an electrical signal flowing the output side of the combiner, and output an electrical detection signal; a controller configured to output multiple control signals by using an externally applied control signal and the electrical detection signal; and a switching unit disposed between the combiner and the plasma chamber, and controlled by a switching control signal outputted from the controller to output the high frequency power signal to a first high frequency power output signal through a first output terminal and to output the high frequency power signal to a second high frequency power signal through a second output terminal.

A substrate processing system includes a plasma generator configured to supply (radio frequency) RF power to an electrode arranged in a processing chamber. A sensor is configured to sense a parameter of the RF power supplied to the electrode. A controller is configured to compensate variations in a rate of a plasma process due to variations in bulk resistivity of a substrate arranged on a substrate support by causing the sensor to sense the parameter at least one of prior to plasma processing of the substrate and after a predetermined period after the plasma processing of the substrate begins; and adjusting the parameter of the RF power for the substrate during the plasma processing of the substrate based on the parameter sensed for the substrate.

Provided are methods, apparatuses and systems for enhanced determination of the gas composition of a sample gas using glow discharge optical emission spectroscopy (GD-OES) for gas analysis. A first method comprises: generating one or more oscillating electromagnetic fields within a plasma cell to excite particles within the cell, to produce a glow discharge plasma in the plasma cell, and controlling the operating conditions for the plasma cell while flowing a gas mixture through the plasma cell to maintain glow discharge optical emissions from the plasma within a desired operating range; and monitoring one or more glow discharge optical emissions from the plasma in the plasma cell; wherein said monitoring of the optical emissions comprises measuring the optical emissions, or measuring a signal that correlates with the optical emissions, at twice the plasma excitation frequency; and processing the signal during each excitation cycle of the electromagnetic excitation, to determine the concentration of a gas within a gas mixture flowing through the plasma cell.

Embodiments include wafer and photomask processing equipment. An etch processing system including an endpoint detection system having a light source and a photodetector is described. In an example, the light source emits light toward an alignment region over a substrate support member of an etch chamber, and the photodetector receives a reflection of the light from the alignment region. The reflection is monitored for endpoint and process control. A second light source emits light toward the alignment region, and a camera receives the light to image the alignment region. The image can be used to align the light emitted by the endpoint detection system to a spot location within the alignment region, e.g., within an alignment opening of a substrate mounted on the substrate support member.

The features of the present invention are that a plasma processing apparatus includes: a process chamber in which a sample is plasma-processed; a dielectric window which airtightly seals an upper part of the process chamber; an inductive antenna which is disposed at an upper part of the dielectric window and forms an induction magnetic field; a radio frequency power source which supplies radio frequency power to the inductive antenna; and a Faraday shield to which radio frequency power is supplied from the radio frequency power source and which is disposed between the dielectric window and the inductive antenna, and the plasma processing apparatus further includes a monitoring unit which monitors a current flowing in the Faraday shield and a control unit which controls the monitored current.

According to one embodiment, a plasma processing apparatus includes a processing chamber, a sample stage that is disposed inside the processing chamber and electrically divided into a plurality of regions on which a sample is placed, an electromagnetic wave introduction unit that introduces electromagnetic waves into the processing chamber, and a bias power applying unit that applies bias power to the sample stage, in which the bias power applying unit is configured to include a first radio frequency power applying unit that applies first radio frequency power to a first region out of the plurality of electrically divided regions of the sample stage, a second radio frequency power applying unit that applies second radio frequency power to a second region out of the plurality of electrically divided regions of the sample stage, and a phase adjuster that controls the first radio frequency power applying unit and the second radio frequency power applying unit to shift the phases of the first radio frequency power and the second radio frequency power by a predetermined amount.