The present invention relates to a method for the evaporation of a cathode by means of cathodic arc evaporation, wherein the focal spot of the arc is forced to a predetermined track on the cathode surface by means of temporally and spatially controllable magnetic fields, wherein a predetermined removal of material of the cathode surface is produced. The invention also relates to a device for carrying out the method according to the invention.

A cathode arc source comprises: a cathode target; a first magnetic field source located above the target; a second magnetic field source located below the target; and a third magnetic field source located between the first and second magnetic field sources and having an opposite polarity to the first magnetic field source; wherein the resultant magnetic field from the first, second and third magnetic field sources has zero field strength in a direction substantially normal to the target at a position above the target. The invention also provides methods of striking a cathode target and methods of depositing coatings which can be carried out using the cathode arc source described herein.

Methods, systems, apparatuses, and computer programs are presented for controlling plasma discharge uniformity using magnetic fields. A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate. The apparatus further includes a magnetic field sensor to detect a first signal representing an axial magnetic field and a second signal representing a radial magnetic field associated with the vacuum chamber. The apparatus includes at least two magnetic field sources to generate an axial supplemental magnetic field and a radial supplemental magnetic field through the processing zone of the vacuum chamber. The apparatus includes a magnetic field controller coupled to the magnetic field sensor and the at least two magnetic field sources. The magnetic field controller adjusts at least one characteristic of one or more of the axial supplemental magnetic field and the radial supplemental magnetic field based on the first signal and the second signal.

Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Apparatus for sputter deposition of target material to a substrate is disclosed. In one form, the apparatus includes a substrate guide arranged to guide a substrate along a curved path and a target portion spaced from the substrate guide and arranged to support target material. The target portion and the substrate guide define between them a deposition zone. The apparatus includes biasing element for applying electrical bias to the target material. The apparatus also includes a confining arrangement including one or more magnetic elements arranged to provide a confining magnetic field to confine plasma in the deposition zone thereby to provide for sputter deposition of target material to the web of substrate in use. The confining magnetic field having magnetic field lines arranged to, at least in the deposition zone, substantially follow a curve of the curved path so as to confine said plasma around said curve of the curved path.

A sputtering apparatus has a vacuum chamber capable of arranging a target material and a substrate therein so as to face each other, a DC power supply capable of electrically being connected to the target material, and a pulsing unit pulsing electric current flowing in the target material from the DC power supply, in which plasma is generated in the vacuum chamber to form a thin film on the substrate, including an ammeter measuring electric current flowing in the pulsing unit from the DC power supply, a power supply controller performing feedback control of the DC power supply so that a current value measured by the ammeter becomes a prescribed value and a pulse controller indicating a pulse cycle shifted from a control cycle of the DC power supply by the power supply controller to the pulsing unit.

Methods and apparatus for processing substrates are disclosed. In some embodiments, a process chamber for processing a substrate includes: a body having an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a substrate support disposed in the interior volume opposite the target and having a support surface configured to support the substrate; a collimator disposed in the interior volume between the target and the substrate support; a first magnet disposed about the body proximate the collimator; a second magnet disposed about the body above the support surface and entirely below the collimator and spaced vertically below the first magnet; and a third magnet disposed about the body and spaced vertically between the first magnet and the second magnet. The first, second, and third magnets are configured to generate respective magnetic fields to redistribute ions over the substrate.

Methods and apparatus for controlling the ion fraction in physical vapor deposition processes are disclosed. In some embodiments, a process chamber for processing a substrate having a given diameter includes: an interior volume and a target to be sputtered, the interior volume including a central portion and a peripheral portion; a rotatable magnetron above the target to form an annular plasma in the peripheral portion; a substrate support disposed in the interior volume to support a substrate having the given diameter; a first set of magnets disposed about the body to form substantially vertical magnetic field lines in the peripheral portion; a second set of magnets disposed about the body and above the substrate support to form magnetic field lines directed toward a center of the support surface; a first power source to electrically bias the target; and a second power source to electrically bias the substrate support.

An arc evaporation source (101) according to one embodiment of the present invention comprises: a ring-shaped circumferential magnet (103) which is so arranged as to surround the outer circumference of a target (102) along a direction in which the direction of magnetization becomes parallel with the front surface of the target; and a rear surface magnet (104) which is arranged on the rear surface side of the target (102) along a direction in which the direction of magnetization becomes perpendicular to the front surface of the target. The magnetic pole of the circumferential magnet (103) on the inner side in the radial direction and the magnetic pole of the rear surface magnet (104) on the target (102) side have the same polarity as each other.