The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.

A high throughput deposition apparatus includes a first process chamber; one or more first deposition sources in the first process chamber; a first main carrier comprising a plurality of first sub-carriers each configured to carry one or more substrate each positioned around an axial direction and configured to receive a first deposition material from the one or more first deposition sources, wherein the first sub-carriers define a curved surface around the axial direction; and a transport mechanism configured to move the first main carrier along the axial direction through the first process chamber.

A high surface area coil for use with a physical vapor deposition apparatus comprising a first surface. At least a portion of the first surface has a macrotexture with a surface roughness between about 15 m and about 150 m. At least a portion of the first surface has a microtexture with a surface roughness between about 2 m and 15 m.

A sputtering apparatus and a target changing device thereof are disclosed. The target changing device includes a stand, a mounting shaft on the stand, a target mounting body sleeved on an outside of the mounting shaft and being ratable around an axis of the mounting shaft, and a first driving mechanism configured to drive the target mounting body to rotate around the axis of the mounting shaft. The target mounting body includes at least two target mounting surfaces configured to mount targets. When the target mounting body rotates around the axis of the mounting shaft, each of the target mounting surfaces may be switched between an operating state orientation and an idle orientation

Disclosed herein is a sputtering chamber component comprising a particle trap, the particle trap comprising a patterned macrotexture formed on at least a portion of a surface of the sputtering chamber component. The patterned macrotexture has indentations having a depth and is arranged in a repeating pattern. The patterned macrotexture has first threads extending in a first direction, the first threads forming side walls separating adjacent indentations in a second direction. The patterned macrotexture has second threads extending in the second direction. The second direction is at an angle of greater than 0 and less than 180 degrees to the first direction, the second threads forming side walls separating adjacent indentations in the first direction. The patterned macrotexture has a random pattern microtexture formed on the patterned macrotexture; the microtexture has a height less than the depth of the indentations.

Disclosed is a substrate processing system which enables combined static and pass-by processing. Also, a system architecture is provided, which reduces footprint size. The system is constructed such that the substrates are processed therein vertically, and each chamber has a processing source attached to one sidewall thereof, wherein the other sidewall backs to a complementary processing chamber. The chamber system can be milled from a single block of metal, e.g., aluminum, wherein the block is milled from both sides, such that a wall remains and separates each two complementary processing chambers.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.

A target for a cathode sputtering system has a tubular target body made of a sputtering material and at least one connector piece, which is connected to the target body and projects from the target body, for attaching the target body to the cathode sputtering system. The target body is connected to the at least one connector piece in a vacuum-tight manner and the two are rotationally fixed relative to one another. At least one damper element is provided between the at least one connector piece and the target body.

A high throughput deposition apparatus includes a first process chamber; one or more first deposition sources in the first process chamber; a first main carrier comprising a plurality of first sub-carriers each configured to carry one or more substrate each positioned around an axial direction and configured to receive a first deposition material from the one or more first deposition sources, wherein the first sub-carriers define a curved surface around the axial direction; and a transport mechanism configured to move the first main carrier along the axial direction through the first process chamber.