Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.

A method of the invention which manufactures a substrate with a transparent conductive film, includes: preparing a base body that has a top surface and a back surface and has an a-Si film coating at least one of the top surface and the back surface; and setting temperatures of the base body and the a-Si film to be in the range of 70 to 220° C. in a film formation space having a processing gas containing hydrogen, applying a sputtering voltage to a target, carrying out DC sputtering, and thereby forming the a-Si film on a transparent conductive film.

A method for coating a curved substrate is disclosed, which includes: providing a coating device including: a chamber, a carrying platform, a sputtering mechanism, and a position-adjusting mechanism, wherein the carrying platform is disposed in the chamber and has a first surface, the sputtering mechanism is disposed in the chamber and is disposed corresponding to the carrying platform, and the position-adjusting mechanism is disposed in the chamber; providing a curved substrate, wherein the curved substrate is disposed on the first surface of the carrying platform and the curved substrate has a second surface; adjusting the sputtering mechanism to different positions by the position-adjusting mechanism; and sputtering a coating material to different parts of the second surface of the curved substrate by the sputtering mechanism at the different positions.

Apparatus for physical vapor deposition are provided herein. In some embodiments, a clamp for use in a physical vapor deposition (PVD) chamber includes a clamp body and an outwardly extending shelf that extends from the clamp body, wherein the outwardly extending shelf includes a clamping surface configured to clamp an isolator ring to a chamber body of the PVD chamber, wherein a height of the outwardly extending shelf is about 15 percent to about 40 percent of a height of the clamp body and wherein the clamp body includes a central opening configured to retain a fastener therein.

Disclosed are method and apparatus for treating a substrate. The apparatus is a dual-function process chamber that may perform both a material process and a thermal process on a substrate. The chamber has an annular radiant source disposed between a processing location and a transportation location of the chamber. Lift pins have length sufficient to maintain the substrate at the processing location while the substrate support is lowered below the radiant source plane to afford radiant heating of the substrate. A method of processing a substrate having apertures formed in a first surface thereof includes depositing material on the first surface in the apertures and reflowing the material by heating a second surface of the substrate opposite the first surface. A second material can then be deposited, filling the apertures partly or completely. Alternately, a cyclical deposition/reflow process may be performed.

A method of forming a particle trap on a sputtering chamber component comprises forming a first pattern on at least a portion of a surface of the sputtering chamber component to form a first patterned top surface, and forming a second pattern on at least a portion of the first patterned top surface.

An apparatus with a deposition source and a substrate holder having a source mounting portion, which is rotatable about a first axis, a shielding element, which is disposed between the deposition source and the substrate holder, and a drive arrangement. The deposition source has a material outlet opening from which material is emitted. A longitudinal axis of an elongate central region of the material outlet opening extends parallel and centrally between the edges of the material outlet opening. The deposition source is mounted to the source mounting portion such that the longitudinal axis of the central region is parallel to the first axis. The shielding element has an aperture. The drive arrangement controls rotation of the source mounting portion, adjustment of a width of the aperture, and relative movement between the substrate holder and both the source mounting portion and the shielding element.

A high-power pulsed surface processing system includes insulated-gate bipolar transistors (IGBT) to replicate desirable pulse structures with high precision, at low cost, and with high reliability within a single system. The pulsed surface processing system includes a power supply, an anode and a cathode, a dual gate driver supplying power to one or more IGBT gates, and one or more capacitor banks. Pulse formation software controls the timing and duration of electrical pulses to the electrodes. A freewheeling diode protects the system from an abrupt reduction of current in the circuit. The high-power pulsed surface processing system may be used to control versatile and complex pulse structures while with precise control of instantaneous pulse powers, pulse timing, and process control. The inclusion of dual gate drivers also offers the ability for multiple pulsers to be created and “slaved” together for a wide variety of custom processes.

A target for a cathode sputtering system has a tubular target body made of a sputtering material and at least one connector piece, which is connected to the target body and projects from the target body, for attaching the target body to the cathode sputtering system. The target body is connected to the at least one connector piece in a vacuum-tight manner and the two are rotationally fixed relative to one another. At least one damper element is provided between the at least one connector piece and the target body.

Embodiments of process shield for use in process chambers are provided herein. In some embodiments, a process shield for use in a process chamber includes: an annular body having an upper portion and a lower portion extending downward and radially inward from the upper portion, wherein the upper portion includes a plurality of annular trenches on an upper surface thereof and having a plurality of slots disposed therebetween to fluidly couple the plurality of annular trenches, wherein one or more inlets extend from an outer surface of the annular body to an outermost trench of the plurality of annular trenches.