A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.

Disclosed are embodiments for an engineered feature formed as a part of or on a chamber component. In one embodiment, a chamber component for a processing chamber includes a component part body having unitary monolithic construction. The component part body has an outer surface. An engineered complex surface is formed on the outer surface. The engineered complex surface has a first lattice framework formed from a plurality of first interconnected laths and a plurality of first openings are bounded by three or more laths of the plurality of laths.

This sputtering cathode has a sputtering target having a tubular shape in which the cross-sectional shape thereof has a pair of long side sections facing each other, and an erosion surface facing inward. Using the sputtering target, while moving a body to be film-formed, which has a film formation region having a narrower width than the long side sections of the sputtering target, parallel to one end face of the sputtering target and at a constant speed in a direction perpendicular to the long side sections above a space surrounded by the sputtering target, discharge is performed such that a plasma circulating along the inner surface of the sputtering target is generated, and the inner surface of the long side sections of the sputtering target is sputtered by ions in the plasma generated by a sputtering gas to perform film formation in the film formation region of the body to be film-formed.

A sputtering method includes one or more sputtering processes. Each sputtering process includes in a first pre-sputtering phase, sputtering a target material on a baffle plate configured to shield a substrate; in a second pre-sputtering phase, sputtering a target material compound on the baffle plate; and in a main sputtering phase, sputtering the target material compound on the substrate. The first pre-sputtering phase is used to adjust a sputtering voltage for the main sputtering phase.

A target replacement apparatus for use in replacement of a sputtering target, the sputtering target being used to carry out surface treatment by a physical vapor deposition method on a material to be surface-treated that is situated in a reduced pressure space of a chamber, the target replacement apparatus includes a target retaining portion retaining the sputtering target; an attachment and detachment mechanism used to detachably attach the target retaining portion to the chamber at a position where the sputtering target faces the material to be surface-treated that is situated in the reduced pressure space; and an isolating mechanism operable to isolate the target retaining portion attached to the chamber from the reduced pressure space in an openable and closable manner.

A film formation apparatus includes a chamber which has an interior capable of being vacuumed, and which includes a lid that is openable and closable on the upper part of the chamber, a rotation table which is provided in the chamber and which and carries a workpiece in the circular trajectory, a film formation unit that deposits film formation materials by sputtering on the workpiece carried by the rotation table to form films, a shielding member which is provided with an opening at the side which the workpiece passes through, and which forms a film formation room where the film formations by the film formation units are performed, and a support which supports the shielding member, and which is independent relative to the chamber and is independent from the lid.

An apparatus includes a gas input and a cooling plate. A groove surrounds the gas input and less than one hundred percent of the cooling plate. An inflatable seal is in the groove.

Embodiments of process kits for process chambers and methods for processing a substrate are provided herein. In some embodiments, a process kit includes a non-conductive upper shield having an upper portion to surround a sputtering target and a lower portion extending downward from the upper portion; and a conductive lower shield disposed radially outward of the non-conductive upper shield and having a cylindrical body with an upper portion and a lower portion, a lower wall projecting radially inward from the lower portion, and a lip protruding upward from the lower wall. The cylindrical body is spaced apart from the non-conductive upper shield by a first gap. The lower wall is spaced apart from the lower portion of the non-conductive upper shield by a second gap to limit a direct line of sight between a volume within the non-conductive upper shield and the cylindrical body of the conductive lower shield.

A magnetron sputtering device in one embodiment of the present disclosure includes a support table supporting thereon a base substrate, and a floating mask arranged at a first side of the support table and substantially parallel to the support table. The sputtering gap measurement apparatus includes: a horizontal testing platform arranged on the support table during the measurement, a first edge of the horizontal testing platform being flush with an edge of the first side of the support table in the case that the horizontal testing platform is located at a first position; a first movement mechanism configured to control the horizontal testing platform to move in a direction close to the floating mask, the horizontal testing platform being in contact with the floating mask in the case that the horizontal testing platform has moved to a second position; and a distance measurement mechanism configured to measure a movement distance of the horizontal testing platform from the first position to the second position.