Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.

Methods and apparatus for processing substrates with a multi-cathode chamber. The multi-cathode chamber includes a shield with a plurality of holes and a plurality of shunts. The shield is rotatable to orient the holes and shunts with a plurality of cathodes located above the shield. The shunts interact with magnets from the cathodes to prevent interference during processing. The shield can be raised and lowered to adjust gapping between a target of a cathode and a hole to provide a dark space during processing.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

The present invention provides a bulb (100, 110, 120, 130, 140, 140) an excitation chamber (200, 210, 220, 230, 230) a ferrite core (300, 310, 310), a spool (400, 410); an assembly or subassembly of such components, and a lamp (100, 1100, 1200, 1300, 1400, 1500, 1600, 1600, 1600, 1700, 1800) for producing electromagnetic radiation, such as in the light spectrum, UV or IR.

The present invention provides a bulb (100, 110, 120, 130, 140, 140) an excitation chamber (200, 210, 220, 230, 230) a ferrite core (300, 310, 310), a spool (400, 410); an assembly or subassembly of such components, and a lamp (100, 1100, 1200, 1300, 1400, 1500, 1600, 1600, 1600, 1700, 1800) for producing electromagnetic radiation, such as in the light spectrum, UV or IR.

There is provided an electrodeless plasma lamp and confinement member for an electrodeless plasma lamp. The lamp comprises a lamp body with an input coupling element, with one end coupled to an RF source and the other end coupled to a first ground potential. An output coupling element is received substantially within the lamp body and spaced apart from the input coupling element and from the top of the lamp body, wherein one end of the output coupling element is coupled to a second ground potential and the other end of the output coupling element at the top of the lamp body is coupled to a gas filled vessel. An electromagnetic confinement member extends away from the lamp body and surrounds it for reducing emission of electromagnetic waves below a predetermined threshold frequency, and includes a plurality of apertures formed therein.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

The present invention provides a bulb (100, 110, 120, 130, 140, 140) an excitation chamber (200, 210, 220, 230, 230) a ferrite core (300, 310, 310), a spool (400, 410); an assembly or subassembly of such components, and a lamp (100, 1100, 1200, 1300, 1400, 1500, 1600, 1600, 1600, 1700, 1800) for producing electromagnetic radiation, such as in the light spectrum, UV or IR.

The present invention provides a bulb (100, 110, 120, 130, 140, 140) an excitation chamber (200, 210, 220, 230, 230) a ferrite core (300, 310, 310), a spool (400, 410); an assembly or subassembly of such components, and a lamp (100, 1100, 1200, 1300, 1400, 1500, 1600, 1600, 1600, 1700, 1800) for producing electromagnetic radiation, such as in the light spectrum, UV or IR.

A sealed high intensity illumination device configured to receive a laser beam from a laser light source and method for making the same are disclosed. The device includes a sealed cylindrical chamber configured to contain an ionizable medium. The chamber has a cylindrical wall, with an ingress and an egress window disposed opposite the ingress window. A tube insert is disposed within the chamber formed of an insulating material. The insert is configured to receive the laser beam within the insert inner diameter.