A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A broadband light source is disclosed. The broadband light source includes a rotatable gas containment structure. The broadband light source includes a rotational drive system configured to rotate the rotatable gas containment structure about the horizonal axis of rotation of the rotatable gas containment structure. The broadband light source includes a pump source configured to generate pump illumination and a reflector element configured to direct a portion of the pump illumination into the gas to sustain a plasma. The reflector is configured to collect a portion of broadband light emitted from the plasma.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

The present disclosure relates to the technical field of electric light sources, particularly to a metal halide lamp and a manufacturing method thereof. The metal halide lamp includes an electric arc tube, an inner glass bulb, and a lamp holder fixedly connected with the inner glass bulb; the electric arc tube includes a tube body, a positive electrode located inside an electric arc cavity of the tube body and connected with a positive feedthrough inserted in a first leg portion of the tube body, and a negative electrode connected with a negative feedthrough inserted in a second leg portion of the tube body; the electric arc cavity is provided therein with an ignition gas; an outer surface of the first leg portion is provided with a conductive layer and a metal electrical connector, wherein the conductive layer has one end close to and the other end away from an electrode tip of the positive electrode, the metal electrical connector has one end connected with the other end of the conductive layer, and the other end connected with a long molybdenum rod. Security risks in manufacturing, transportation, mounting, utilization, storage, and waste disposal brought about by use of the radioactive material .sup.85Kr are avoided in the present disclosure.

A lighting device (100, 300, 400) is disclosed. The lighting device comprises a light source (110, 310, 410), an at least partially light transmitting envelope (120, 320, 420) and a dispenser (140, 340, 440). The envelope is arranged to define a sealed space (130, 330, 430) in which at least a portion of the light source is arranged. Further, the dispenser comprises a chemically reactive substance and is adapted to gradually release at least some of the chemically reactive substance to the sealed space so as to reduce contaminants and by-products that may be present in the sealed space.

A lighting device (100, 300, 400) is disclosed. The lighting device comprises a light source (110, 310, 410), an at least partially light transmitting envelope (120, 320, 420) and a dispenser (140, 340, 440). The envelope is arranged to define a sealed space (130, 330, 430) in which at least a portion of the light source is arranged. Further, the dispenser comprises a chemically reactive substance and is adapted to gradually release at least some of the chemically reactive substance to the sealed space so as to reduce contaminants and by-products that may be present in the sealed space.

The present disclosure relates to the technical field of electric light sources, particularly to a metal halide lamp and a manufacturing method thereof. The metal halide lamp includes an electric arc tube, an inner glass bulb, and a lamp holder fixedly connected with the inner glass bulb; the electric arc tube includes a tube body, a positive electrode located inside an electric arc cavity of the tube body and connected with a positive feedthrough inserted in a first leg portion of the tube body, and a negative electrode connected with a negative feedthrough inserted in a second leg portion of the tube body; the electric arc cavity is provided therein with an ignition gas; an outer surface of the first leg portion is provided with a conductive layer and a metal electrical connector, wherein the conductive layer has one end close to and the other end away from an electrode tip of the positive electrode, the metal electrical connector has one end connected with the other end of the conductive layer, and the other end connected with a long molybdenum rod. Security risks in manufacturing, transportation, mounting, utilization, storage, and waste disposal brought about by use of the radioactive material .sup.85Kr are avoided in the present disclosure.

Getter devices with improved sorption rate based on powders of ternary alloys particularly suitable for hydrogen and carbon monoxide sorption are described, said alloys having a composition comprising zirconium, vanadium and aluminum as main constituent elements.

A double-ended high intensity discharge lamp includes a luminous tube which comprises an inner tube and an outer tube. At least one electrical member is securely fastened inside the luminous tube and at least one illuminator supported inside the luminous tube with a distributor connected with the electrical member to receive power and supply the illuminator. The outer tube is another protective shield to stop spreading in explosion of the illuminator.

A double-ended high intensity discharge lamp includes a luminous tube which comprises an inner tube and an outer tube. At least one electrical member is securely fastened inside the luminous tube and at least one illuminator supported inside the luminous tube with a distributor connected with the electrical member to receive power and supply the illuminator. The outer tube is another protective shield to stop spreading in explosion of the illuminator.