An excimer lamp includes a discharge vessel in which a rare gas and a halogen are enclosed. The excimer lamp also includes at least one first electrode and at least one second electrode for generating a dielectric barrier discharge inside the discharge vessel. The discharge vessel has a discharge forming region and a non-discharge region such that discharging takes place in the discharge forming region and no discharging takes place in the non-discharge region. The discharge forming region is formed between the first electrode(s) and the second electrode(s). The non-discharge region communicates with the discharge forming region. The excimer lamp satisfies a following equation:

(Vb×Ph)/Sd≥4.50

where Vb [mm.sup.3] represents a space volume inside the discharge vessel, Sd [mm.sup.2] represents an inner surface area of the discharge vessel in the discharge forming region, and Ph [Torr] represents a halogen-atoms partial pressure enclosed in the discharge vessel.

In the excimer lamp according to the present invention, a flat discharge vessel having a substantially rectangular cross-sectional shape and comprising a pair of planar parts and a pair of side-surface parts has a pair of external electrodes disposed on the respective outer surfaces of the planar parts. The end parts of the external electrodes are provided with an auxiliary electrode extending to a region that is made smaller than the distance between the planar parts. A lead that supplies electricity to the external electrode is connected to the auxiliary electrode in the region that is made smaller than the distance between the planar parts.

There is provided a light transmissive material capable of reducing the attachment of contaminants to its front surface, and easily removing contaminants even when the contaminants have been attached thereto. There are also provided a lamp including alight emitting tube formed of the light transmissive material as well as a gas treatment device and a gas treatment method utilizing the light transmissive material.

The light transmissive material according to the present invention includes a glass substrate having a front surface on which a surface layer formed of nano-silica particles is provided. The lamp according to the present invention includes a light emitting tube formed of the above-described light transmissive material, in which the surface layer is provided on an outer surface of the light emitting tube. The gas treatment device according to the present invention includes: a chamber having a treatment space through which a gas to be treated flows; and an ultraviolet lamp disposed so that at least a part of a light emitting tube is exposed to the treatment space. The light emitting tube in the ultraviolet lamp has an outer surface on which a surface layer formed of nano-silica particles is provided.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

A low-pressure discharge lamp having a discharge vessel and a coating structure. The coating structure is formed on an inner side of the discharge vessel. The coating structure has nanoscale phosphate particles and/or nanoscale functional oxide. Alternatively or in addition, the phosphate particles are free or at least approximately free of rare earth metals. The nanoscale phosphate particles range in size from 5 nm to 800 nm.

A body, such as a lamp body, includes a tubular element. At least one conductor is introduced into the tubular element and a glass material surrounds the conductor. The glass material forms a seal between the tubular element and the conductor. The glass material includes a sintered glass, such as a sintered glass ring, and may completely surround the conductor.

Embodiments relate generally to an ultraviolet lamp (100) for use with a photoionization detector comprising a sealed tube (102) configured to contain at least one gas; a coating (120) applied to the inner surface (110) of the sealed tube (102); and a crystal window (112) attached to the sealed tube (102), configured to allow transmittance of ultraviolet (UV) light generated within the sealed tube (102). Additional embodiments include a method of forming an ultraviolet lamp (100) for use with a photoionization detector, the method comprising applying at least one layer of a coating (120) onto an inner surface (110) of a sealed tube (102); sealing a crystal window (112) onto the sealed tube (102); filling the sealed tube (102) with at least one gas; sealing the sealed tube (102) containing the at least one gas; generating ultraviolet radiation using the at least one gas within the sealed tube (102); and directing the generated ultraviolet radiation through the crystal window (112) toward a sample gas in the photoionization detector.

A broadband ultraviolet illumination source for a characterization system is disclosed. The broadband ultraviolet illumination source includes an enclosure having one or more walls, the enclosure configured to contain a gas, and a plasma discharge device based on a graphene-dielectric-semiconductor (GOS) planar-type structure. The GOS structure includes a silicon substrate having a top surface, a dielectric layer disposed on the top surface of the silicon substrate, and at least one layer of graphene disposed on a top surface of the dielectric layer. A metal contact may be formed on the top surface of the graphene layer. The GOS structure has several advantages for use in an illumination source, such as low operating voltage (below 50 V), planar surface electron emission, and compatibility with standard semiconductor processes. The broadband ultraviolet illumination source further includes electrodes placed inside the enclosure or magnets placed outside the enclosure to increase the current density.

Improved ultraviolet field-emission lamps can be safely deployed close to people because they eliminate the use of toxic materials, mitigate heating issues, and emit light in a wavelength range that is safe for human exposure.

The invention relates to plasma light sources with a continuous optical discharge (COD). The light source contains a gas filled chamber with a region of radiating plasma sustained by a focused beam of a CW laser. A density of gas particles in the chamber is less than 90.Math.10.sup.19 cm.sup.3 and a temperature of the chamber is in a range from 600 to 900 K or optionally higher. Preferably the density of gas particles is as low as possible and the temperature of the inner surface of the chamber at operation is as high as possible under providing a gas pressure in the chamber of about 50 bar or more. The technical result of the invention consists in providing COD sustaining conditions, which are optimal for achieving high stability and high brightness of the radiating plasma, in the creation on this basis of broadband light sources with ultra-high brightness and stability.