Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

A method of controlling an implanter operating in plasma immersion, the method including the steps of: an implantation stage (1) during which the plasma AP is ignited and the substrate is negatively biased S; a neutralization stage (2) during which the plasma AP is ignited and the substrate has a positive or zero bias S applied thereto; a suppression stage (3) during which the plasma AP is extinguished; and an expulsion stage (4) for expelling negatively charged particles from the substrate and during which the plasma AP is extinguished.

The method is remarkable in that the duration of the expulsion stage is longer than 5 s.

The invention also provides a power supply for biasing an implanter.

A gas supply assembly is described for delivery of gas to a plasma flood gun. The gas supply assembly includes: a fluid supply package configured to deliver inert gas to a plasma flood gun for generating inert gas plasma including electrons for modulating surface charge of a substrate in ion implantation operation; and cleaning gas in the inert gas fluid supply package in mixture with the inert gas, or in a separate cleaning gas supply package configured to deliver cleaning gas to the plasma flood gun concurrently or sequentially with respect to delivery of inert gas to the plasma flood gun. A method of operating a plasma flood gun is also described, in which cleaning gas is introduced to the plasma flood gun, intermittently, continuously, or sequentially in relation to flow of inert gas to the plasma flood gun. The cleaning gas is effective to generate volatile reaction product gases from material deposits in the plasma flood gun, and to effect re-metallization of a plasma generation filament in the plasma flood gun.

A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening.

Methods are provided for operating a particle-optical device, wherein electrical charging of a sample to be examined is reduced. The particle-optical device includes a vacuum chamber for receiving a sample, a particle source for generating a primary particle beam directed to the sample, a scan generator for directed guidance of the primary particle beam over the sample surface, and at least one detector for detecting interaction products created during the interaction between the primary particle beam and the sample.

A structure for grounding an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for grounding an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and back side. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUV mask is grounded. The reflective surface of the EUV mask on a continuously moving stage is scanned by using the electron beam simultaneously. The moving direction of the stage is perpendicular to the scanning direction of the electron beam.

The present disclosure provides a charged particle beam device capable of removal or control of an electric charge by plasma without affecting control of the charged particle beam. The charged particle beam device according to the present disclosure is provided with a charged particle beam optical system for emitting a charged particle beam onto a sample, a sample chamber provided with a stage on which the sample is placed, a plasma generating device for generating plasma to be emitted onto the stage so as to remove an electrification charge from the sample, and a coupling member coupling the plasma generating device to the sample chamber, the coupling member including an insulating spacer insulating the sample chamber and the plasma generating device.

A computer-readable recording medium encoded with a computer program for executing an ion etching method of etching a substrate arranged on a substrate holder using an ion beam etching apparatus. The computer program includes a decremental control program having a command according to which the first step is executed; and an incremental control program having a command according to which the second step is executed.

A structure for discharging an extreme ultraviolet mask (EUV mask) is provided to discharge the EUV mask during the inspection by an electron beam inspection tool. The structure for discharging an EUV mask includes at least one grounding pin to contact conductive areas on the EUV mask, wherein the EUV mask may have further conductive layer on sidewalls or/and bottom. The inspection quality of the EUV mask is enhanced by using the electron beam inspection system because the accumulated charging on the EUU mask is grounded.