A charged particle beam specimen inspection system is described. The system includes an emitter for emitting at least one charged particle beam, a specimen support table configured for supporting the specimen, an objective lens for focusing the at least one charged particle beam, a charge control electrode provided between the objective lens and the specimen support table, wherein the charge control electrode has at least one aperture opening for the at least one charged particle beam, and a flood gun configured to emit further charged particles for charging of the specimen, wherein the charge control electrode has a flood gun aperture opening.

A composite stage for electron enhanced material processing is presented. The composite stage provides capacitive coupling of a biasing signal to a substrate supported by the composite stage. The composite stage comprises a pedestal and a support plate that includes stacked layer construction. The stacked layer construction includes a plurality of layers of electrically conductive and dielectric materials. According to one aspect, the plurality of layers includes at least one electrically conductive layer for receiving a basing signal, and at least one dielectric layer in contact with and overlying the at least one electrically conductive layer. According to one aspect, the substrate is held in place via an electrically insulating clamp, the clamp providing an aperture for processing of a portion of the substrate. A matching circuit is arranged between a biasing signal generator and the composite stage. A shunting resistor is coupled to the matching circuit.

A wafer grounding apparatus and method adaptable to a charged particle beam apparatus is disclosed. A wafer substrate is supported by a wafer mount. A pulse current pin is arranged to be in contact with a backside film formed on a backside of the wafer substrate. A grounding pulse generator provides at least one pulse to drive the pulse current pin such that dielectric breakdown occurring at the backside film leads to establishment of a current path through the backside films. Accordingly, a current flows in the wafer substrate through this current path and then flows out of the wafer substrate via at least one current return path formed from capacitive coupling between the wafer substrate and the wafer mount.

A system for zapping a wafer, the system includes a pulse generator; a sensor; a first conductive interface; a second conductive interface; a controller; wherein the pulse generator is configured to generate zapping pulses; wherein the first conductive interface is configured to provide the zapping pulses to a first location of a backside insulating layer of a wafer; wherein the sensor is configured to monitor a coupling between the first conductive interface and the second conductive interface to provide a monitoring result; wherein the monitoring occurs while the second conductive interface contacts a second location of the backside insulating layer; and wherein the controller is configured to control a generation of the zapping pulses in response to the monitoring result.

Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

A system for grounding a mask using a grounding component are provided. Some embodiments of the system include a grounding component comprising a base and an extension protruding from the base and comprising a conductive prong configured to contact a conductive layer of the mask. Some embodiments of the system include a plurality of conductive prongs configured to contact multiple positions of a conductive layer of the mask. Some other embodiments of the system include an extension comprising various shapes.

Systems and methods for wafer grounding and wafer grounding location adjustment are disclosed. A first method may include receiving a first value of an electric characteristic associated with the wafer being grounded by an electric signal; determining a first control parameter using at least the first value; and controlling a characteristic of the electric signal using the first control parameter and the first value. A second method for adjusting a grounding location for a wafer may include terminating an electric connection between the wafer and at least one grounding pin in contact the wafer; adjusting a relative position between the wafer and the grounding pin; and restoring the electric connection between the grounding pin and the wafer. A third method may include causing a grounding pin to penetrate through a coating on the wafer by impact; and establishing an electrical connection between the grounding pin and the wafer.

A charged particle beam apparatus includes a charged particle source, a separator, a charged particle beam irradiation switch, and a control device. The separator is inserted into a charged particle optical system and deflects a traveling direction of a charged particle beam out of an optical axis of the charged particle optical system or deflects the traveling direction in the optical axis of the charged particle optical system. The charged particle beam irradiation switch absorbs the charged particle beam deflected out of the optical axis of the charged particle optical system or reflects the charged particle beam toward the separator. The control device controls a charged particle beam irradiation switch.

A substrate inspection method includes reducing a surface potential of a substrate; and increasing a difference of the surface potential of the substrate, where reducing the surface potential of the substrate includes: controlling a scanning electron microscope to irradiate an electron beam to the substrate for a first irradiation time; and after a first standby time has elapsed, controlling the scanning electron microscope to re-irradiate the electron beam to the substrate for the first irradiation time, where increasing the difference of the surface potential of the substrate includes: controlling the scanning electron microscope to irradiate the electron beam to the substrate for a second irradiation time; and after a second standby time has elapsed, controlling the scanning electron microscope to re-irradiate the electron beam to the substrate for the second irradiation time, and where the first irradiation time is less than the second irradiation time.

Systems and methods of providing a probe spot in multiple modes of operation of a charged-particle beam apparatus are disclosed. The method may comprise activating a charged-particle source to generate a primary charged-particle beam and selecting between a first mode and a second mode of operation of the charged-particle beam apparatus. In the flooding mode, the condenser lens may focus at least a first portion of the primary charged-particle beam passing through an aperture of the aperture plate to form a second portion of the primary charged-particle beam, and substantially all of the second portion is used to flood a surface of a sample. In the inspection mode, the condenser lens may focus a first portion of the primary charged-particle beam such that the aperture of the aperture plate blocks off peripheral charged-particles to form the second portion of the primary charged-particle beam used to inspect the sample surface.