Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.

An apparatus for suppression of arcs in an electron beam generator including: a first module providing an operating voltage; a second module including a coil suitable for a voltage of at least 10 kV, and at least one free-wheeling diode connected in parallel to the coil; a third module including a first circuit component configured to detect a first actual value for electric voltage, and a first signal is producible when the first actual value falls below a first threshold value, a second circuit component by which a second actual value for electric current is detectable, and a second signal is generated when the second actual value exceeds a second threshold value, a control logic, which optionally links the first and second signals and a resultant output signal is producible; a semiconductor-based switch suitable for the voltage of at least 10 kV, which is opened based on the output signal.

An electrode for use in an ion implantation system includes a body portion and a penetration portion. The penetration portion includes penetration holes which are closely and regularly arranged. The penetration holes have the shape of a circle or a regular polygon with at least four sides. The electrode has an increased aperture ratio which, in turn, increases the density of the ion beam, thereby improving the efficiency of the ion implantation process.

A sputtering system that includes a sputtering chamber having a target material serving as a cathode, and an anode and a work piece. A direct current (DC) power supply supplies electrical power to the anode and the cathode sufficient to generate a plasma within the sputtering chamber. A detection module detects the occurrence of an arc in the sputtering chamber by monitoring an electrical characteristic of the plasma. In one embodiment the electrical characteristic monitored is the impedance of the plasma. In another embodiment the electrical characteristic is the conductance of the plasma.

A member for semiconductor manufacturing apparatus includes: an upper plate that has a wafer placement surface, contains no electrode, and is a ceramic material plate; an intermediate plate that is provided on a surface of the upper plate, opposite to the wafer placement surface, that is used as an electrostatic electrode, and that is a conductive material plate; and a lower plate that is joined to a surface of the intermediate plate, opposite to the surface on which the upper plate is provided, and that is a ceramic material plate.

In one embodiment, an electron beam inspection apparatus includes an optical system irradiating a substrate with primary electron beams, a beam separator separating, from the primary electron beams, secondary electron beams emitted as a result of irradiating the substrate with the primary electron beams, a detector detecting the secondary electron beams separated, a movable stage on which the substrate is placed, a support base supporting the substrate on the stage, and an applying unit applying a first voltage to the substrate. The support base includes a plurality of support pins that support the substrate from below. The support pins each include a columnar insulator and a metal film disposed in the insulator. A second voltage is applied to the metal film.

A charged particle-optical device for projecting a plurality of charged particle beams along respective beam paths towards a sample location, the charged particle-optical device comprising: a charged particle-optical assembly configured to manipulate the charged particle beams, the charged particle-optical assembly comprising a first charged particle-optical element comprising a plate having one or more apertures around a beam path of the charged particle beams; and an electrical connector configured to electrically connect the plate of the first charged particle-optical element to an electrical power source, wherein the electrical connector: comprises a shield configured to define a field free region substantially free of electric fields; and is configured to be electrically connectable to a flexible coupling configured to electrically connect the plate of the first charged particle-optical element to the electrical power source, the flexible coupling located within the field free region.

Systems and methods for arc handling in plasma processing operations are disclosed. The method includes providing current with a power supply to a plasma load at a first voltage polarity and energizing an energy storage device so when it is energized, the energy storage device applies a reverse polarity voltage that has a magnitude that is as least as great as the first voltage polarity. When an arc is detected, power is applied from the energy storage device to the plasma load with a reverse polarity voltage that has a polarity that is opposite of the first voltage polarity, the application of the reverse polarity voltage to the plasma load decreases a level of the current that is provided to the plasma load.

The inventive concept provides a support unit for supporting a substrate. The support unit includes a heating unit for heating the substrate, and wherein the heating unit includes: a plurality of heating members; and a plurality of first power lines and a plurality of second power lines providing a supply and return pathway for a power to and from the plurality of heating members, and wherein the plurality of second power lines are connected to each of the plurality of first power lines through the plurality of heating members, and at least two heating members are connected to each first power line and at least two heating members are connected to each second power line, and at least two heating members are connected in parallel between each first power line and each second power line.

To provide a charged particle beam device including a booster electrode and an object lens that generates a magnetic field in a vicinity of a sample, and capable of preventing ion discharge, an insulator is disposed between a magnetic field lens and the booster electrode. A tip of the insulator protrudes to a tip side of an upper magnetic path from a tip of a lower magnetic path of the magnetic field lens. The tip on a lower side of the insulator is above the lower magnetic path, and a non-magnetic metal electrode is embedded between the upper magnetic path and the lower magnetic path.