The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

A control mechanism for a high-voltage generator that provides voltage and current to an electronic radiation source in a high-temperature environment is provided, the control mechanism including at least an intermediate enveloping ground plane, and a ground-plane potential monitoring system that provides an input to a control processor that in turn drives the high-voltage generator. A method of controlling a high-voltage generator that powers an electronic radiation source is also provided, the method including at least: measuring an enveloping ground plane potential such that a change in the potential of said enveloping ground plane surrounding the generator is monitored and used to determine the beginning of one or more of a partial discharge and flash-over event.

In a substrate processing apparatus for processing a substrate, a processing chamber accommodating the substrate is provided. A mounting table is disposed in the processing chamber and configured to attract and hold the substrate using an electrostatic attractive force. A charge amount measurement unit is disposed in the processing chamber and configured to measure charge amount of a substrate attraction surface of the mounting table. A charge neutralization mechanism is configured to neutralize the substrate attraction surface of the mounting table. A retreating mechanism is configured to make the charge amount measurement unit retreat from a measurement position facing the substrate attraction surface of the mounting table.

The present disclosure describes an ion implantation system that includes a bushing designed to reduce the accumulation of IMP by-produces on the bushing's inner surfaces. The ion implantation system can include a chamber, an ion source configured to generate an ion beam, and a bushing coupling the ion source and the chamber. The bushing can include (i) a tubular body having an inner surface, a first end, and a second end and (ii) multiple angled trenches disposed within the inner surface of the tubular body, where each of the multiple angled trenches extends towards the second end of the tubular body.

The present disclosure relates to a charged particle beam device intended to appropriately measure the amount of foreign substances in a vacuum chamber. As one aspect for achieving the above object, proposed is a charged particle beam device including a charged particle beam column (9) configured to irradiate a sample with a charged particle beam, vacuum chambers (1, 2) configured to create a vacuum around the sample, a plurality of electrodes (12) arranged in the vacuum chambers, and a capacitance measuring device (13) for measuring the capacitance between the plurality of electrodes.

A system and method for monitoring glitch frequency and energy is disclosed. The system includes a glitch capture module that monitors the voltage of a biased component and captures any glitches that occur. The glitch capture module also extends the duration of that glitch so that the controller is guaranteed to observe this glitch. In certain embodiments, the glitch capture module captures the maximum energy of the glitch by storing the minimum voltage, in terms of magnitude, of the glitch.

A glitch monitoring system is disclosed. The glitch monitoring system allows the capture of voltage and current data from one or more channels. Additionally, voltage and current data that occurred prior to the glitch can also be captured for further analysis. The amount of data may be thousands or millions of bytes. Additionally, the description of a glitch, including an upper threshold, a lower threshold and a duration, can be programmed. This allows spurious perturbation in voltage or current to be ignored if desired. Further, the voltage and current data may be filtered if desired prior to being stored in memory. This data can later be retried by a main controller and analyzed to determine a potential cause of the glitch and potential remedial actions.

An ion implanter includes a measuring device that measures an angle distribution of an ion beam with which a wafer is irradiated. The measuring device includes: a slit into which the ion beam is incident; a central electrode body having a beam measurement surface disposed on a central plane extending from the slit to a beam traveling direction; a plurality of side electrode bodies disposed between the slit and the central electrode body and disposed away from the central plane in a slit width direction, in which each of the plurality of side electrode bodies has a beam measurement surface; and a magnet device that applies a magnetic field bending around an axis extending along a slit length direction to at least one of the beam measurement surfaces of the plurality of side electrode bodies.

An insulator for an ion source is positioned between the apertured ground electrode and apertured suppression electrode. The insulator has an elongate body having a first end and a second end, where one or more features are defined in the elongate body and increase a gas conductance path along a surface of the elongate body from the first end to the second end. One or more of the features is an undercut extending generally axially or at a non-zero angle from an axis of the elongate body into the elongate body. One of the features can be a rib extending from a radius of the elongate body.

The present invention relates to a plasma diagnosing system and method, and more particularly, to a system and a method for diagnosing plasma in real time using a change in a capacitance sensed by an electrode using a reference waveform having a frequency different from a plasma discharging frequency band region. The sensed capacitance varies before and after discharging plasma and the plasma is diagnosed using the change in capacitance in real time.