In a scanning electron microscope, an atmospheric pressure space having a specimen arranged therein and a vacuum space arranged on a charged particle optical system side are isolated from each other using an isolation film that transmits charged particle beams. The scanning electron microscope has an electron optical lens barrel, a chassis, and an isolation film. The electron optical lens barrel radiates a primary electron beam onto a specimen. The chassis is directly bonded to the inside of the electron optical lens barrel and has an inside that turns into a lower vacuum state than the inside of the electron optical lens barrel at least during the radiation of the primary electron beam. The isolation film isolates a space in an atmospheric pressure atmosphere having a specimen mounted therein and the inside of the chassis in a lower vacuum state, and transmits the primary charged particle beam.

An ion implanter includes an ion source configured to generate an ion beam including an ion of a first nonradioactive nuclide, a beamline configured to support an ion beam irradiated target formed of a solid material including a second nonradioactive nuclide different from the first nonradioactive nuclide, and a controller configured to calculate at least one of an estimated radiation dosage of a radioactive ray and an estimated generation amount of a radioactive nuclide generated by a nuclear reaction between the first nonradioactive nuclide and the second nonradioactive nuclide.

Disclosed herein is a charged particle beam apparatus (10) including: a sample chamber (11); a sample stage (31); an electron beam column (13) irradiating a sample S using an electron beam; and a focused ion beam column (14) irradiating the sample S using a focused ion beam. The apparatus (10) includes an electrode member (45) provided to be displaced between an insertion position between a beam emitting end portion of the electron beam column (13) and the sample stage (31) and a withdrawal position distant from the insertion position, the electrode member being provided with an electrode penetrating hole passing the electron beam therethrough. The apparatus (10) includes: a driving unit (42) displacing the electrode member (45); a power source (20) applying a negative voltage to the electrode member (45); and an insulation member (43) electrically insulating the sample chamber (11)and the driving unit (42) from the electrode member (45).

A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking part of a charged particle beam passing through the central opening of said electrode. The electrode is configured to operate at a first electric potential and the aperture array is configured to operate at a second electric potential different from the first electric potential. The electrode and the aperture array together form an aberration correcting lens.

Embodiments of the invention relate to a mass resolving aperture that may be used in an ion implantation system that selectively exclude ion species based on charge to mass ratio (and/or mass to charge ratio) that are not desired for implantation, in an ion beam assembly. Embodiments of the invention relate to a mass resolving aperture that is segmented, adjustable, and/or presents a curved surface to the oncoming ion species that will strike the aperture. Embodiments of the invention also relate to the filtering of a flow of charged particles through a closed plasma channel (CPC) superconductor, or boson energy transmission system.

An apparatus for improving the uniformity of an ion beam is disclosed. The apparatus includes a heating element to heat an edge of the suppression electrode that is located furthest from the suppression aperture. In operation, the edge of the suppression electrode nearest to the suppression electrode may be heated by the ion beam. This heat may cause the suppression electrode to distort, affecting the uniformity of the ion beam. By heating the distal edge of the suppression electrode, the thermal distortion of the suppression electrode can be controlled. In other embodiments, the distal edge of the suppression electrode is heated to create a more uniform ion beam. By monitoring the uniformity of the ion beam downstream from the suppression electrode, such as by use of a beam uniformity profiler, a controller can adjust the heat applied to the distal edge to achieve the desired ion beam uniformity.

An apparatus for improving the uniformity of an ion beam is disclosed. The apparatus includes a heating element to heat an edge of the suppression electrode that is located furthest from the suppression aperture. In operation, the edge of the suppression electrode nearest to the suppression electrode may be heated by the ion beam. This heat may cause the suppression electrode to distort, affecting the uniformity of the ion beam. By heating the distal edge of the suppression electrode, the thermal distortion of the suppression electrode can be controlled. In other embodiments, the distal edge of the suppression electrode is heated to create a more uniform ion beam. By monitoring the uniformity of the ion beam downstream from the suppression electrode, such as by use of a beam uniformity profiler, a controller can adjust the heat applied to the distal edge to achieve the desired ion beam uniformity.

Embodiments relate to a grid short clearing system is provided for gridded ion beam sources used in industrial applications for materials processing systems that reduces grid damage during operation. In various embodiments, the ion source is coupled to a process chamber and a grid short clearing system includes methods for supplying a gas to the process chamber and setting the gas pressure to a predetermined gas pressure in the range between 50 to 750 Torr, applying an electrical potential difference between each adjacent pair of grids using a current-limited power supply, and detecting whether or not the grid shorts are cleared. The electrical potential difference between the grids is at least 10% lower than the DC electrical breakdown voltage between the grids with no contaminants.

Processes and systems for carbon ion implantation include utilizing phosphine as a co-gas with a carbon oxide gas in an ion source chamber. In one or more embodiments, carbon implantation with the phosphine co-gas is in combination with the lanthanated tungsten alloy ion source components, which advantageously results in minimal oxidation of the cathode and cathode shield, among other components within the ion source chamber.

In a scanning electron microscope, an atmospheric pressure space having a specimen arranged therein and a vacuum space arranged on a charged particle optical system side are isolated from each other using an isolation film that transmits charged particle beams. The scanning electron microscope has an electron optical lens barrel, a chassis, and an isolation film. The electron optical lens barrel radiates a primary electron beam onto a specimen. The chassis is directly bonded to the inside of the electron optical lens barrel and has an inside that turns into a lower vacuum state than the inside of the electron optical lens barrel at least during the radiation of the primary electron beam. The isolation film isolates a space in an atmospheric pressure atmosphere having a specimen mounted therein and the inside of the chassis in a lower vacuum state, and transmits the primary charged particle beam.