There is provided an ion implanter including a beamline unit that transports an ion beam, an implantation processing chamber in which an implantation process of irradiating a wafer with an ion beam is performed, an illumination device that performs irradiation with illumination light in a direction intersecting with a transport direction of the ion beam in at least one of the beamline unit and the implantation processing chamber, an imaging device that generates a captured image captured by imaging a space through which the illumination light passes, and a control device that detects a particle which scatters the illumination light, based on the captured image.

A method for cleaning debris and contamination from an etching apparatus is provided. The etching apparatus includes a process chamber, a source of radio frequency power, an electrostatic chuck within the process chamber, a chuck electrode, and a source of DC power connected to the chuck electrode. The method of cleaning includes placing a substrate on a surface of the electrostatic chuck, applying a plasma to the substrate, thereby creating a positively charged surface on the surface of the substrate, applying a negative voltage or a radio frequency pulse to the electrode chuck, thereby making debris particles and/or contaminants from the surface of the electrostatic chuck negatively charged and causing them to attach to the positively charged surface of the substrate, and removing the substrate from the etching apparatus thereby removing the debris particles and/or contaminants from the etching apparatus.

A cleanliness monitor, an evaluation system and a method. The cleanliness monitor may include: a first vacuum chamber, a second vacuum chamber, a molecule collector, a release unit, a mass spectrometer, a manipulator that may be configured to move the molecule collector from the first position to the second position, and an analyzer. The mass spectrometer may have a line of sight to an inner space of the second vacuum chamber. The mass spectrometer may be configured to monitor the inner space of the second vacuum chamber and to generate detection signals that are indicative of a content of the inner space of the second vacuum chamber. A first subset of the detection signals may be indicative of a presence of the at least subset of released organic molecules. The analyzer may be configured to determine, based on the detection signals, the cleanliness of at least one out of (a) the first vacuum chamber, and (b) a tested vacuum chamber. The tested vacuum chamber is fluidly coupled to the first vacuum chamber.

The present disclosure relates to a charged particle beam device intended to appropriately measure the amount of foreign substances in a vacuum chamber. As one aspect for achieving the above object, proposed is a charged particle beam device including a charged particle beam column (9) configured to irradiate a sample with a charged particle beam, vacuum chambers (1, 2) configured to create a vacuum around the sample, a plurality of electrodes (12) arranged in the vacuum chambers, and a capacitance measuring device (13) for measuring the capacitance between the plurality of electrodes.

A cleanliness monitor for monitoring a cleanliness of a vacuum chamber. The cleanliness monitor may include a mass spectrometer, a molecule aggregation and release unit and an analyzer. The molecule aggregation and release unit is configured to (a) aggregate, during an aggregation period, organic molecules that are present in the vacuum chamber and (b) induce, during a release period, a release of a subset of the organic molecules towards the mass spectrometer. The mass spectrometer is configured to monitor an environment within the vacuum chamber and to generate detection signals indicative of a content of the environment; wherein a first subset of the detection signals is indicative of a presence of the subset of the organic molecules. The analyzer is configured to determine the cleanliness of the vacuum chamber based on the detection signals.

The present disclosure relates to a charged particle beam device intended to appropriately measure the amount of foreign substances in a vacuum chamber. As one aspect for achieving the above object, proposed is a charged particle beam device including a charged particle beam column (9) configured to irradiate a sample with a charged particle beam, vacuum chambers (1, 2) configured to create a vacuum around the sample, a plurality of electrodes (12) arranged in the vacuum chambers, and a capacitance measuring device (13) for measuring the capacitance between the plurality of electrodes.

In order to specify a dust emitting mechanism portion, a wafer must be provided near a mechanism portion in operation and the mechanism portion must be operated so that foreign matter sticks to a surface of the wafer. A mechanism that allows foreign matter to stick to a wafer by repeating operation of each of particular portions in a device and thus intentionally bringing about dust emission is provided. For example, the device includes a control device, a sample chamber in which a sample is processed, and a mechanism that loads and unloads a sample to and from the sample chamber, the mechanism has a plurality of portions, the control device has a script, and a particular portion of the plurality of portions of the mechanism is repeatedly operated as the control device executes the script.

According to one aspect of the present disclosure, there is provided a cleaning method including: cleaning a component in which a deposit adhering to the component constituting an apparatus is removed by supplying and discharging a cleaning gas, wherein the act of cleaning includes controlling the apparatus so that a signal, which indicates a concentration of a predetermined gas generated by a reaction of the deposit and the cleaning gas, reaches a predetermined upper limit value or less and then stays within a range between the predetermined upper limit value and a predetermined lower limit value for a predetermined time period.

The present invention relates to a handheld material analyser comprising an air-tight chamber having an analysis aperture; an electron beam generation system adapted to direct a beam of electrons through the analysis aperture; an Energy-Dispersive X-ray (EDX) spectroscopy system having a detector located in the chamber; the chamber being adapted to operate at internal pressures between atmospheric pressure and a vacuum of the order of 1 Pa; and a gas inlet adapted to receive an inert gas for generating a plasma in the region of the photocathode. In this way, the plasma can clean the photocathode.

The present invention relates to a handheld material analyser comprising an air-tight chamber having an analysis aperture; an electron beam generation system adapted to direct a beam of electrons through the analysis aperture; an Energy-Dispersive X-ray (EDX) spectroscopy system having a detector located in the chamber; the chamber being adapted to operate at internal pressures between atmospheric pressure and a vacuum of the order of 1 Pa; and a gas inlet adapted to receive an inert gas for generating a plasma in the region of the photocathode. In this way, the plasma can clean the photocathode.