A radiation analysis apparatus includes an excitation source unit irradiating an object, for which the radiation analysis apparatus analyzes property or a structure, with a first radiation, a radiation detection unit including three or more radiation detectors that detect a second radiation generated from the object irradiated with the first radiation, a radiation focusing unit disposed between the object and the radiation detection unit, and focusing the second radiation, a position changing unit changing a relative positional relationship between the radiation focusing unit and the radiation detection unit, and a control unit controlling the position changing unit to change the positional relationship, based on first information which is stored in a storage unit and indicates an intensity distribution of the second radiation emitted from the radiation focusing unit and second information indicating a distribution based on a detection count of the second radiation detected by each of the radiation detectors.

An electron beam inspection apparatus, the apparatus including a plurality of electron beam columns, each electron beam column configured to provide an electron beam and detect scattered or secondary electrons from an object, and an actuator system configured to move one or more of the electron beam columns relative to another one or more of the electron beam columns. The actuator system may include a plurality of first movable structures at least partly overlapping a plurality of second movable structures, the first and second movable structures supporting the plurality of electron beam columns.

Provided is a charged particle beam device including a charged particle optical column that irradiates a specimen with a primary charged particle beam, and a specimen base rotating unit that is capable of rotating the specimen base in a state of an angle formed by a surface of the specimen base and an optical axis of the primary charged particle beam being inclined to a non-perpendicular angle, in which the specimen base is configured to include a detecting element that detects a charged particle scattered or transmitted inside the specimen, and transmitted charged particle images of the specimen corresponding to each angle is acquired by irradiating the specimen in a state of the specimen base rotating unit being rotated at a plurality of different angles.

A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample.

An apparatus for inspecting a substrate is described. The apparatus includes an X-Y stage that supports a substrate to be inspected and is operable to move a substrate supported thereby in X and Y directions; and an imaging system including a plurality of beam columns operable to irradiate regions of a substrate supported by the X-Y stage with beams of energy, respectively, discrete from one another. Respective ones of the beam columns are movable relative to others of the electron beam columns.

Provided are new techniques for fault analysis in IC semiconductor devices, including system designs and methods to enable the probing of circuitry within an IC device under test (DUT) using electron beam (e-beam) techniques while the DUT is being stimulated electrically, or while the device is active on its own or within a host system mounted in a circuit board or other module. The DUT could be a packaged IC, or an IC in some unpackaged form. To create a local evacuated volume immediately outside the e-beam tool, a sealing element is sealed against or around the DUT for a localized seal. Such an arrangement obviates the need for vacuum feedthroughs of possibly thousands of signals required to operate and monitor the DUT, and further enables probing of a DUT while it is operating in its normal environment, such as installed on a circuit board in its system, or on a tester.

The disclosure relates to a low energy electron microscopy. The electron microscopy includes a vacuum chamber; an electron gun used to emit electron beam; a diffraction chamber; an imaging device; a sample holder used to fix two-dimensional nanomaterial sample; a vacuum pumping device; and a control computer. The electron beam transmits the sample to form a transmission electron beam and diffraction electron beam. The control computer includes a switching module to switch the work mode between a large beam spot diffraction imaging mode and small beam spot diffraction imaging mode.

Methods, apparatuses, systems and software for ion beam milling or machining are disclosed. The apparatus includes a specimen holder, a table, one or more ion sources, rotatable ion optics, and an imaging device. The specimen holder is configured to hold a specimen in a stationary position during milling or machining. The table is configured to change the stationary position of the specimen holder in any of three orthogonal linear directions and an angular direction. The rotatable ion optics are configured to emit an ion beam towards a predetermined location on the specimen from any of the one or more ion sources at any angle around an axis that is orthogonal to a horizontal surface of the table when the angular direction of the table is 0. The imaging device is configured to generate an image of the specimen including the predetermined location, thereby enabling real-time monitoring of the milling or machining process.

A charged-particle beam exposure method includes providing a sample that has patterns having shot densities different from each other, using the sample to obtain pattern drift values correlated with the shot densities, and irradiating the sample with a charged-particle beam to perform an exposure process on the sample. The irradiating of the sample with the charged-particle beam is carried out while a deflection voltage, which is applied to the charged-particle beam to deflect the charged-particle beam, is corrected based on the pattern drift value corresponding to a shot density of a pattern to be formed on the sample.

Provided herein are ultraviolet (UV) devices, systems, and methods for UV disinfection and sterilization, more specifically, UV devices, systems, and methods for UV disinfection and sterilization of a container, room, space or defined environment. The systems, UV devices, and methods are particularly useful for the UV disinfection and sterilization of a container used in the food and dairy industry and for containers used in the process of fermentation for an alcoholic beverage. Provided are also UV devices, systems, and methods for inhibiting the growth of one or more species of microorganisms present in a container, room, space or defined environment, preferably for inhibiting the growth of one or more species of microorganisms present on an interior surface of a container, room, space or defined environment.