A plasma processing apparatus includes: a detector configured to detect a change in an intensity of light emission from plasma formed inside a processing chamber; and a unit configured to adjust conditions for forming the plasma or processing a wafer arranged inside the processing chamber using an output from the detector, wherein the detector detects a signal of the intensity of light emission at plural time instants before an arbitrary time instant during processing, and wherein the adjusting unit removes the component of a temporal change of a long cycle of the intensity of light emission from this detected signal and detects the component of a short temporal change of the intensity of light emission, and adjusts the conditions for forming the plasma or processing a wafer arranged inside the processing chamber based on the short temporal change of the detected intensity of light emission.

A portable XRF analyzer includes a hand shield and a handle. In one embodiment, the XRF analyzer further comprises a power component spaced-apart from an engine component. The handle and the hand shield extend in parallel between the engine component and the power component, attaching the engine component to the power component. In another embodiment, the XRF analyzer further comprises two housing portions, each integrally formed in a single, monolithic body formed together at the same time. The two housing portions are joined together to form an XRF analyzer housing. In another embodiment, the hand shield is shorter than the handle.

A charged particle-optical device for projecting a plurality of charged particle beams along respective beam paths towards a sample location, the charged particle-optical device comprising: a charged particle-optical assembly configured to manipulate the charged particle beams, the charged particle-optical assembly comprising a first charged particle-optical element comprising a plate having one or more apertures around a beam path of the charged particle beams; and an electrical connector configured to electrically connect the plate of the first charged particle-optical element to an electrical power source, wherein the electrical connector: comprises a shield configured to define a field free region substantially free of electric fields; and is configured to be electrically connectable to a flexible coupling configured to electrically connect the plate of the first charged particle-optical element to the electrical power source, the flexible coupling located within the field free region.

An apparatus for forming a three-dimensional article through successively depositing individual layers of powder material that are fused together with an electron beam from an electron beam source so as to form the article according to a computer model thereof. The apparatus includes a chamber a chamber having a first section and a second section openly connected to each other. The first section is configured to receive the individual layers of powder material. The second section comprising an electron beam source, an electromagnetic focus coil having an axially extending, and a reflector coil. The electron beam source is configured to emit an electron beam to fuse the individual layers of powder material. The reflector coil is arranged radially outside the electromagnetic focus coil. The direction of windings of the reflector coil is opposite a direction of windings of the electromagnetic focus coil.

An apparatus that may be used to allow the rotation of a component that passes through a wall of a vacuum chamber is disclosed. The apparatus includes a rotatable shaft through which the component passes. The rotatable shaft is held in place using a holder, which retains a portion of the rotatable shaft. In some embodiments, the holder is affixed to a plate, which is then affixed to the chamber wall. The plate has an opening which is aligned to the opening in the chamber wall. A portion of the rotatable shaft passes through the opening in the plate and vacuum seals are disposed between the rotatable shaft and the plate. This apparatus may be used to allow use of rotatable components in an ion implanter.

A radio frequency (RF) screen for a microwave powered ultraviolet (UV) lamp system is disclosed. In one example, a disclosed RF screen includes: a sheet comprising a conductive material; and a frame around edges of the sheet. The conductive material defines a predetermined mesh pattern of individual openings across substantially an operative area of the screen. Each of the individual openings has a triangular shape.

A multi-mode low-voltage electron microscope operative in the accelerating voltage range of 3-50 kV is provided that include in the following order based on the direction of a primary electron beam (12): an electron beam source (1) to generate the primary electron beam (12), a first magnetostatic condenser lens means (3), a second magnetostatic condenser lens means (4), a condenser aperture (5), a sample holder (6), a magnetostatic objective lens means (7), an objective aperture (8), a first electrostatic projective lens means (9), and an end detection system (18) comprising a detection screen (11) and at least one detector.

A plasma processing apparatus includes a conductive processing container, a stage, an upper electrode, a gas supply device configured to supply a processing gas to a reaction chamber, a radio frequency power supply configured to generate plasma of the processing gas, and an electromagnetic wave suppressor provided in a sidewall of the processing container. The electromagnetic wave suppressor faces the reaction chamber, and includes an absorption ring, a seal, and a conductive reflection wall. The absorption ring surrounds the reaction chamber, is isolated from the reaction chamber by the seal and the sidewall, and includes a material that absorbs electromagnetic waves propagating along a side surface of the sidewall. The reflection wall protrudes from the absorption ring, and separates a region, which is surrounded by the reflection wall and the side surface, from the reaction chamber to suppress electromagnetic waves propagating in the region from advancing toward the reaction chamber.

An apparatus includes first and second VI sensors, an optical sensor, and an arcing detector. The first VI sensor is disposed in a power filter or on a power supply line connected to a heater disposed in a lower electrode of a process chamber in which a plasma process is performed. The first VI sensor senses a harmonic generated from a first power supply supplying power to the lower electrode and outputs a first signal. The optical sensor senses an intensity of light generated from the process chamber and outputs a second signal. The second VI sensor is disposed on a power supply line connected to an upper electrode and senses a harmonic generated from a second power supply supplying power to the upper electrode and outputs a third signal. The arcing detector determines whether arcing occurs based on one or more of the first, second, and third signals.

A chamber component of a processing chamber, including a body and a textured surface on at least one surface of the body, where the textured surface includes a lattice structure configured to absorb incident electromagnetic radiation at a plurality of frequencies and a plurality of angles of incidence.