A multi-beam exposure device reducing variations of electron beam optical systems for electron beams, and preventing vacuum leakage. An exposure device is provided, including: a body tube depressurized to produce a vacuum state therein; multiple charged particle beam sources provided in the body tube, and emitting multiple charged particle beams in a direction of extension of the body tube; multiple electromagnetic optical elements, each provided corresponding to one of the multiple charged particle beams in the body tube, and controlling the one of the multiple charged particle beams; first and second partition walls arranged separately from each other in the direction of extension in the body tube, and forming a non-vacuum space between at least parts of the first and second partition walls; and a supporting unit provided in the body tube, and supporting the multiple electromagnetic optical elements for positioning of the multiple electromagnetic optical elements.

A charged particle beam device, comprising a charged particle source configured to emit a charged particle beam; a movable stage comprising an assembly of aperture arrays having at least a first aperture array and a second aperture array, the movable stage is configured to align the assembly of aperture arrays with the charged particle beam, and at least one aperture array comprises a shielding tube coupled to the movable stage.

The present disclosure relates to an integrated chip processing tool. The integrated chip processing tool includes a gas distribution ring configured to extend along a perimeter of a process chamber. The gas distribution ring includes a lower ring extending around the process chamber. The lower ring has a plurality of gas inlets arranged along a bottom surface of the lower ring and a plurality of gas conveyance channels arranged along an upper surface of the lower ring directly over the plurality of gas inlets. The gas distribution ring further includes an upper ring disposed on the upper surface of the lower ring and covering the plurality of gas conveyance channels. A plurality of gas outlets are arranged along opposing ends of the plurality of gas conveyance channels. A plurality of gas conveyance paths extending between the plurality of gas inlets and the plurality of gas outlets have approximately equal lengths.

An ion source includes a vacuum chamber having a cooling mechanism, an ion generation container for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode for extracting ions generated in the ion generation container and generating an ion beam, and a shielding member provided inside and in the vicinity of an inner wall of the vacuum chamber, and having a main body made of a conductive metal for blocking deposition of an insulating material on the inner wall (10d) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.

An ion source includes a vacuum chamber having a cooling mechanism, an ion generation container for reacting an ionized gas with an ion material so as to generate ions, an extraction electrode for extracting ions generated in the ion generation container and generating an ion beam, and a shielding member provided inside and in the vicinity of an inner wall of the vacuum chamber, and having a main body made of a conductive metal for blocking deposition of an insulating material on the inner wall (10d) of the vacuum chamber. The main body of the shielding member has a plurality of protruding support portions that is in contact with the inner wall of the vacuum chamber for supporting the main body in a manner such that the main body is fitted at a distance from the inner wall of the vacuum chamber.

An apparatus may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes, arranged in series, downstream to the first grounded drift tube, and a second grounded drift tube, downstream to the at least two AC drift tubes. The apparatus may include an AC voltage assembly, electrically coupled to at least two AC drift tubes. The AC voltage assembly may include a first AC voltage source, coupled to deliver a first AC voltage signal at a first frequency to a first AC drift tube of at least two AC drift tubes. The AC voltage assembly may further include a second AC voltage source, coupled to deliver a second AC voltage signal at a second frequency to a second AC drift tube of the at least two AC drift tubes, wherein the second frequency comprises an integral multiple of the first frequency.

An ion implantation system, including an ion source, and a buncher to receive a continuous ion beam from the ion source, and output a bunched ion beam. The buncher may include a drift tube assembly, having an alternating sequence of grounded drift tubes and AC drift tubes. The drift tube assembly may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes downstream to the first grounded drift tube, a second grounded drift tube, downstream to the at least two AC drift tubes. The ion implantation system may include an AC voltage assembly, coupled to the at least two AC drift tubes, and comprising at least two AC voltage sources, separately coupled to the at least two AC drift tubes. The ion implantation system may include a linear accelerator, comprising a plurality of acceleration stages, disposed downstream of the buncher.

An apparatus may include a first grounded drift tube, arranged to accept a continuous ion beam, at least two AC drift tubes, arranged in series, downstream to the first grounded drift tube, and a second grounded drift tube, downstream to the at least two AC drift tubes. The apparatus may include an AC voltage assembly, electrically coupled to at least two AC drift tubes. The AC voltage assembly may include a first AC voltage source, coupled to deliver a first AC voltage signal at a first frequency to a first AC drift tube of at least two AC drift tubes. The AC voltage assembly may further include a second AC voltage source, coupled to deliver a second AC voltage signal at a second frequency to a second AC drift tube of the at least two AC drift tubes, wherein the second frequency comprises an integral multiple of the first frequency.

A charged particle beam device, comprising a charged particle source configured to emit a charged particle beam; a movable stage comprising an assembly of aperture arrays having at least a first aperture array and a second aperture array, the movable stage is configured to align the assembly of aperture arrays with the charged particle beam, and at least one aperture array comprises a shielding tube coupled to the movable stage.

An electrically conductive component is provided for a near-wafer environment of an ion implantation system, where the component has a carbon-based substrate having a microscopically textured surface overlying a macroscopically textured surface. The macroscopically textured surface is a mechanically, chemically, or otherwise roughened surface. The microscopically textured surface can be a converted surface formed by a chemical reaction forming a non-stoichiometric silicon and carbon surface. The one or more components can be a dose cup, exit aperture, and tunnel wall. The carbon-based substrate can be graphite. The microscopically textured surface can be a modified graphite surface. No defined interface layer exists between the microscopically textured surface and macroscopically textured surface. The carbon-based graphite is selected based on a final porosity and grain size of the graphite.