Variable multi-beam charged particle devices for inspection of a sample include a multi-beam source that produces a plurality of charged particle beamlets, an objective lens, a sample holder for holding the sample between the objective lens and the multi-beam source, and a focusing column that directs the plurality of charged particle beamlets so that they are incident upon the sample. The focusing column directs the plurality of charged beams such that there are one or more crossovers of the plurality of charged particle beamlets, where each crossover corresponds to a point where the plurality of charged particle beamlets pass through a common location. The variable multi-beam charged particle devices also include a variable aperture that is configured to vary the current of the plurality of charged particle beamlets, and which is located at a final crossover of the one or more crossovers that is most proximate to the sample.

An electromagnetic mechanical pulser implements a transverse wave metallic comb stripline TWMCS kicker having inwardly opposing teeth that retards a phase velocity of an RF traveling wave to match the kinetic velocity of a continuous electron beam, causing the beam to oscillate before being chopped into pulses by an aperture. The RF phase velocity is substantially independent of RF frequency and amplitude, thereby enabling independent tuning of the electron pulse widths and repetition rate. The TWMCS further comprises an electron pulse picker (EPP) that applies a pulsed transverse electric field across the TWMCS to deflect electrons out of the beam, allowing only selected electrons and/or groups of electrons to pass through. The EPP pulses can be synchronized with the RF traveling wave and/or with a pumping trigger of a transverse electron microscope (TEM), for example to obtain dynamic TEM images in real time.

Provided is a multi charged particle beam writing apparatus including: an emission unit emitting a charged particle beam; a restriction aperture unit having a first opening having a variable opening area, the restriction aperture unit shielding a portion of the charged particle beam; a shaping aperture array substrate having a plurality of second openings, the shaping aperture array substrate forming multiple beams by allowing the shaping aperture array substrate to be irradiated with the charged particle beam passing through the first opening and allowing a portion of the charged particle beam to pass through the plurality of second openings; and a blanking aperture array substrate having a plurality of third openings, each beam of the multiple beams passing through the plurality of third openings, the blanking aperture array substrate being capable of independently deflecting each beam of the multiple beams.

An electromagnetic mechanical pulser implements a transverse wave metallic comb stripline TWMCS kicker having inwardly opposing teeth that retards a phase velocity of an RF traveling wave to match the kinetic velocity of a continuous electron beam, causing the beam to oscillate before being chopped into pulses by an aperture. The RF phase velocity is substantially independent of RF frequency and amplitude, thereby enabling independent tuning of the electron pulse widths and repetition rate. The TWMCS further comprises an electron pulse picker (EPP) that applies a pulsed transverse electric field across the TWMCS to deflect electrons out of the beam, allowing only selected electrons and/or groups of electrons to pass through. The EPP pulses can be synchronized with the RF traveling wave and/or with a pumping trigger of a transverse electron microscope (TEM), for example to obtain dynamic TEM images in real time.

The focused ion beam apparatus includes: a vacuum container; an emitter tip disposed in the vacuum container and having a pointed front end; a gas field ion source; a focusing lens; a first deflector; a first aperture; an objective lens focusing the ion beam passing through the first deflector; and a sample stage. A signal generator responding to the ion beam in a point-shaped area is formed between the sample stage and an optical system including at least the focusing lens, the first aperture, the first deflector, and the objective lens, and a scanning field ion microscope image of the emitter tip is produced by matching a signal output from the signal generator and scanning of the ion beam by the first deflector with each other.

Systems and methods for implementing charged particle flooding in a charged particle beam apparatus are disclosed. According to certain embodiments, a charged particle beam system includes a charged particle source and a controller which controls the charged particle beam system to emit a charged particle beam in a first mode where the beam is defocused and a second mode where the beam is focused on a surface of a sample.

A set of aperture substrates for multiple beams includes a first shaping aperture array substrate including a plurality of first openings, the first shaping aperture array substrate being irradiated with a charged particle beam in a region in which the first openings are formed whereby first multiple beams are formed with a part of the charged particle beams having passed respectively through the first openings, and a second shaping aperture array substrate including a plurality of second openings through which corresponding first multiple beam passes respectively whereby second multiple beams are formed. Each of the second multiple beams is shaped by a pair of opposite sides of the first opening and a pair of opposite sides of the second opening.

Provided is a multi-charged-particle beam writing apparatus including: an emitter emitting a charged particle beam; a first shaping aperture array substrate having a plurality of first apertures and forming first multiple beams by passing a part of the charged particle beam through the first apertures, respectively; a second shaping aperture array substrate having second apertures formed at positions corresponding to the respective first apertures and forming second multiple beams by passing at least a part of each of the first multiple beams through corresponding the second apertures, respectively; a blanking aperture array having third apertures formed at positions corresponding to the respective second apertures and including blankers disposed in the respective third apertures to perform blanking deflection on the respective beams of the corresponding second multiple beams; a movable mechanism moving at least one of the first shaping aperture array substrate and the second shaping aperture array substrate; and a controller controlling the movable mechanism.

The present disclosure relates to an ion implantation amount adjustment device that includes: an adjuster configured to turn on or off an ion outlet of the ion implantation apparatus; and an actuator configured to control movement of the adjuster to adjust an opening degree of the ion outlet.

An ion implantation system including an ion source for use in creating an ion beam is disclosed. The ion source has an ion source arc chamber housing that confines a high density concentration of ions within the chamber housing. An extraction member defining an appropriately configured extraction aperture allows ions to exit the source arc chamber. In a preferred embodiment, the extraction member defines a tailored extraction aperture shape for modifying an ion beam profile and producing a substantially uniform beam current across a dimension of the ion beam. The extraction aperture member defines an aperture in the form of an elongated slit having a width that varies, with wide ends and a narrow middle. The midsection of the extraction aperture has a narrower width than the opposite end sections. The tailored shape of the extraction aperture includes a central portion having a first width dimension, and first and second distal portions extending from opposite sides of the central portion, the opposed distal portions having a second width dimension that is greater than the first width dimension of the central portion.