The present application discloses an accelerator system for mineral component analysis and system and method for mineral component analysis. The accelerator system includes an electron gun for generating an electron beam; an accelerating tube for accelerating an electron beam emitted by the electron gun to a predetermined energy; a composite target for generating a radioactive ray on the composite target after receiving bombardment of the electron beam; and a shielding mechanism for shielding the radioactive ray.

A charged particle beam apparatus with reduced frequency of lens resetting operations and thus with improved throughput. The apparatus includes an electron source configured to generate an electron beam, an objective lens to which coil current is adapted to be applied to converge the electron beam on a sample, a focal position adjustment device configured to adjust the focal position of the electron beam, a detector configured to detect electrons from the sample, a display unit configured to display an image of the sample in accordance with a signal from the detector, a storage unit configured to store information on the hysteresis characteristics of the objective lens, and an estimation unit configured to estimate a magnetic field generated by the objective lens on the basis of the coil current, the amount of adjustment of the focal position by the focal position adjustment device, and the information on the hysteresis characteristics.

Provided is an electron gun that can have a setting to make it possible to irradiate a desired location on an irradiation target with an electron beam having a desired electron beam parameter by using only the component included in the electron gun. This object can be achieved by an electron gun including: a light source; a photocathode configured to generate releasable electrons in response to receiving light from the light source; an anode configured to generate an electric field between the photocathode and the anode, extract the releasable electrons by the generated electric field, and form an electron beam; and a control unit, and the control unit sets the number of emission times of the electron beam and sets an electron beam parameter for each emitting electron beam, or sets an emission duration of the electron beam and sets an electron beam parameter of an emitting electron beam in association with the emission duration.

A purpose of the present invention is to provide a charged particle beam device that suppresses an off-axis amount when a field of view moves, said move causing an aberration, and allows large field of view moves to be carried out. In order to achieve the above-mentioned purpose, this charged particle beam device is provided with an objective lens and deflectors for field of view moves, said deflectors deflecting a charged particle beam, and is further provided with an accelerating tube positioned between the objective lens and the deflectors for field of view moves, a power source that applies a voltage to the accelerating tube, and a control device that controls the voltage to be applied to the power source in response to the deflection conditions of the deflectors for field of view moves.

A mass analyzer includes a mass analyzing magnet that applies a magnetic field to ions extracted from an ion source to deflect the ions, a mass analyzing slit that is provided downstream of the mass analyzing magnet and allows an ion of a desired ion species among the deflected ions to selectively pass, and a lens device that is provided between the mass analyzing magnet and the mass analyzing slit and applies a magnetic field and/or an electric field to the ion beam to adjust the convergence or divergence of a ion beam. The mass analyzer changes a focal point of the ion beam in a predetermined adjustable range between an upstream side and a downstream side of the mass analyzing slit with the lens device to adjust mass resolution.

To provide a scanning electron microscope having an electron spectroscopy system to attain high spatial resolution and a high secondary electron detection rate under the condition that energy of primary electrons is low, the scanning electron microscope includes: an objective lens 105; primary electron acceleration means 104 that accelerates primary electrons 102; primary electron deceleration means 109 that decelerates the primary electrons and irradiates them to a sample 106; a secondary electron deflector 103 that deflects secondary electrons 110 from the sample to the outside of an optical axis of the primary electrons; a spectroscope 111 that disperses secondary electrons; and a controller that controls application voltage to the objective lens, the primary electron acceleration means and the primary electron deceleration means so as to converge the secondary electrons to an entrance of the spectroscope.

An RF feedthrough has an electrically insulative cone that is hollow having first and second openings at first and second ends having first and second diameters. The first diameter is larger than the second diameter, defining a tapered sidewall of the cone to an inflection point. A stem is coupled to the second end of the cone, and passes through the first opening and second opening. A flange is coupled to the first end of the cone and has a flange opening having a third diameter. The third diameter is smaller than the first diameter. The stem passes through the flange opening without contacting the flange. The flange couples the cone to a chamber wall hole. Contact portions of the cone may be metallized. The cone and flange pass the stem through the hole while electrically insulating the stem from the wall of the chamber.

An electron-beam irradiation apparatus includes: a power source device; an accelerating tube that accelerates electrons when power is supplied from the power source device, to generate an electron beam; and a pressure tank that contains the power source device and the accelerating tube. The pressure tank is configured so as to be dividable into a first division body that contains the power source device and a second division body that contains the accelerating tube. The second division body has an outlet for emitting the electron beam emitted from the accelerating tube, to the outside of the pressure tank. In addition, the power source device has a connecting part connected to the second division body.

With conventional optical axis adjustment, a charged particle beam will not be perpendicularly incident to a sample, affecting the measurements of a pattern being observed. Highly precise measurement and correction of a microscopic inclination angle are difficult. Therefore, in the present invention, in a state where a charged particle beam is irradiated toward a sample, a correction of the inclination of the charged particle beam toward the sample is performed on the basis of secondary electron scanning image information from a reflector plate. From the secondary electron scanning image information, a deviation vector for charged particle beam deflectors is adjusted, causing the charged particle beam to be perpendicularly incident to the sample. At least two stages of charged particle beam deflectors are provided.

In one embodiment, an ion implantation apparatus includes an ion source configured to generate an ion beam. The apparatus further includes a scanner configured to change an irradiation position with the ion beam on an irradiation target. The apparatus further includes a first electrode configured to accelerate an ion in the ion beam. The apparatus further includes a controller configured to change at least any of energy and an irradiation angle of the ion beam according to the irradiation position by controlling the ion beam having been generated from the ion source.