An apparatus that may be used to allow the rotation of a component that passes through a wall of a vacuum chamber is disclosed. The apparatus includes a rotatable shaft through which the component passes. The rotatable shaft is held in place using a holder, which retains a portion of the rotatable shaft. In some embodiments, the holder is affixed to a plate, which is then affixed to the chamber wall. The plate has an opening which is aligned to the opening in the chamber wall. A portion of the rotatable shaft passes through the opening in the plate and vacuum seals are disposed between the rotatable shaft and the plate. This apparatus may be used to allow use of rotatable components in an ion implanter.

A method for plasma processing includes biasing a substrate by ramping a sheath voltage during a first phase of a plasma process and removing sidewall charge buildup on a feature of the substrate in an absence of substrate biasing during a second phase of the plasma process.

A novel composition, system and method thereof for improving beam current during boron ion implantation are provided. The boron ion implant process involves utilizing B2H6, BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Systems and methods for accelerating large particle beam currents in an electrostatic particle accelerator are provided. A system may include a process ion source that is configured to emit ions, a particle accelerator and a target. The particle accelerator may include multiple conductive electrodes that are serially arranged to define a particle path between the process ion source and the target and multiple accelerator tubes arranged to further define the particle path between the process ion source, ones of the conductive electrodes and the target.

Provided is a charged particle beam apparatus capable of realizing a highly reliable insulating structure. This charged particle beam apparatus emits a charged particle beam from a charged particle beam emission device onto a sample, detects charged particles generated from the sample, and creates a sample image or processes the sample. The charged particle beam emission device is provided with a charged particle source and a shield arranged in an interior of a metal housing that is filled with an insulating gas, and an acceleration electrode arranged below the charged particle source, power being supplied to the acceleration electrode via the shield.

A novel composition, system and method for improving beam current during boron ion implantation are provided. In a preferred aspect, the boron ion implant process involves utilizing B2H6, 11BF3 and H2 at specific ranges of concentrations. The B2H6 is selected to have an ionization cross-section higher than that of the BF3 at an operating arc voltage of an ion source utilized during generation and implantation of active hydrogen ions species. The hydrogen allows higher levels of B2H6 to be introduced into the BF3 without reduction in F ion scavenging. The active boron ions produce an improved beam current characterized by maintaining or increasing the beam current level without incurring degradation of the ion source when compared to a beam current generated from conventional boron precursor materials.

Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses.

A a method of stress management in a substrate. The method may include providing a stress compensation layer on a main surface of the substrate; and performing a chained implant procedure to implant a set of ions into the stress compensation layer. The chained implant procedure may include directing a first implant procedure to the substrate, the first implant procedure generating a first damage profile within the stress compensation layer; directing a second implant to the substrate, different from the first implant, wherein a composite damage profile is generated within the stress compensation layer after the second implant, the composite damage profile resulting in a higher stress response ratio than the first damage profile.

An ion implantation system including an ion source for generating an ion beam, an end station for holding a substrate to be implanted by the ion beam, and a linear accelerator disposed between the ion source and the end station and adapted to accelerate the ion beam, the linear accelerator including at least one acceleration stage including a resonator and a resonator coil disposed within a resonator chamber, wherein the resonator coil is a tubular body having a plurality of coaxial layers, including an inner layer, a middle layer, and an outer layer, wherein the outer layer is formed of a dielectric material.