An apparatus may include a first beam sensor, disposed adjacent a first position along a beamline. The apparatus may further include a second beam sensor, disposed adjacent a second position along the beamline, at a predetermined distance, downstream of the first beam sensor. The apparatus may include a detection system, coupled to the first beam sensor and to the second beam sensor to receive from a pulsed ion beam a first electrical signal from the first beam sensor and a second electrical signal from the second beam sensor.

A semiconductor analysis system includes a machining device that machines semiconductor wafer to prepare a thin film sample for observation, a transmission electron microscope device that acquires a transmission electron microscope image of the thin film sample, and a host control device that controls the machining device and the transmission electron microscope device. The host control device evaluates the thin film sample based on the transmission electron microscope image, updates machining conditions based on an evaluation result of the thin film sample, and outputs the updated machining conditions to the machining device.

Embodiments herein are directed to a linear accelerator assembly for an ion implanter, wherein the linear accelerator includes a jacketed resonator coil. In some embodiments, a linear accelerator assembly may include a first fluid conduit and a coil resonator coupled to the first fluid conduit, wherein the coil resonator is operable to receive a first fluid via the first fluid conduit, wherein the coil resonator comprises a first coil conduit adjacent a second coil conduit, and wherein a first fluid channel defined by the first coil conduit is operable to receive the first fluid.

The present invention provides an apparatus of electron beam comprising an electron gun with a pinnacle limiting plate having at least one current-limiting aperture. The pinnacle limiting plate is located between a bottom (or lowest) anode and a top (or highest) condenser within the electron gun. A current (ampere) of the electron beam that has passed through the current-limiting aperture remains the same (unchanged) after the electron beam travels through the top condenser and an electron optical column and arrives at a sample space. Electron-electron interaction of the electron beam is thus reduced.

An ion implanter includes: a plurality of devices which are disposed along a beamline along which an ion beam is transported; a plurality of neutron ray measuring instruments which are disposed at a plurality of positions in the vicinity of the beamline and measure a neutron ray from a neutron ray source which is generated in the beamline due to collision of a high-energy ion beam; and a control device which monitors at least one of the plurality of devices, based on a plurality of measurement values measured by the plurality of neutron ray measuring instruments.

Provided is a particle beam apparatus capable of performing appropriate switching selectively between charged particle beam and neutral particle beam. A particle beam column (19) includes an ion source (41), a condenser lens (52), a charge exchange grid (55), and an objective lens (56). The ion source (41) generates ions. The condenser lens (52) changes focusing of the ion beam so that switching is performed between ion beam and neutral beam as particle beam with which a sample (S) is irradiated. The charge exchange grid (55) converts at least a part of ion beam into neutral particle beam through neutralization. The objective lens (56) is placed downstream of the charge exchange grid (55). The objective lens (56) reduces the ion beam toward the sample (S) when the sample (S) is irradiated with the neutral particle beam as the particle beam.

There is provided an electron microscope in which a crossover position can be kept constant. The electron microscope (100) includes: an electron source (110) for emitting an electron beam; an acceleration tube (170) having acceleration electrodes (170a-170f) and operative to accelerate the electron beam; a first electrode (160) operative such that a lens action is produced between this first electrode (160) and the initial stage of acceleration electrode (170a); an accelerating voltage supply (112) for supplying an accelerating voltage to the acceleration tube (170); a first electrode voltage supply (162) for supplying a voltage to the first electrode (160); and a controller (109b) for controlling the first electrode voltage supply (162). The lens action produced between the first electrode (160) and the initial stage of acceleration electrode (170a) forms a crossover (CO2) of the electron beam. The controller (109b) controls the first electrode voltage supply (162) such that, if the accelerating voltage is modified, the ratio between the voltage applied to the first electrode (160) and the voltage applied to the initial stage of acceleration electrode (170a) is kept constant.

An electrode for manipulating an ion beam. The electrode may include an insert having an ion beam aperture to conduct the ion beam therethrough, the insert comprising a first electrically conductive material; a frame disposed around the insert and comprising a second electrically conductive material; and an outer portion, the outer portion disposed around the frame and comprising a third electrically conductive material, wherein the insert is reversibly detachable from the frame, and wherein the frame is reversibly attachable from the outer portion.

Substrate processing systems, such as ion implantation systems, deposition systems and etch systems, having textured silicon liners are disclosed. The silicon liners are textured using a chemical treatment that produces small features, referred to as micropyramids, which may be less than 20 micrometers in height. Despite the fact that these micropyramids are much smaller than the textured features commonly found in graphite liners, the textured silicon is able to hold deposited coatings and resist flaking. Methods for performing preventative maintenance on these substrate processing systems are also disclosed.

To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.