A charged particle beam device includes: a charged particle beam source; an analyzer that analyzes and detects particles including secondary electrons and backscattered charged particles that are emitted from a specimen by irradiating the specimen with a primary charged particle beam emitted from the charged particle beam source; a bias voltage applying unit that applies a bias voltage to the specimen; and an analysis unit that extracts a signal component of the secondary electrons based on a first spectrum obtained by detecting the particles with the analyzer in a state where a first bias voltage is applied to the specimen, and a second spectrum obtained by detecting the particles with the analyzer in a state where a second bias voltage different from the first bias voltage is applied to the specimen.

An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target.

An apparatus, system and method. An apparatus may include an RF power assembly, arranged to output an RF signal; a resonator, coupled to receive the RF signal, the resonator comprising a first output end and a second output end, and a drift tube assembly, configured to transmit an ion beam, and coupled to the resonator. As such, the drift tube assembly may include a first AC drift tube electrode, coupled to the first output end, and a second AC drift tube electrode, coupled to the second output end and separated from the first AC drift tube by a first gap. The RF power assembly may be switchable to switch output from a first Eigenmode frequency to a second Eigenmode frequency.

The invention provides an electron source including a columnar chip of a hexaboride single crystal, a metal pipe that holds the columnar chip of the hexaboride single crystal, and a filament connected to the metal pipe at a central portion. The columnar chip of the hexaboride single crystal is formed into a cone shape at a portion closer to a tip than a portion held in the metal pipe, and a tip end portion having the cone shape has a (310) crystal face. Schottky electrons are emitted from the (310) crystal face. According to the invention, it is possible to provide a novel electron source having monochromaticity, long-term stability of an emitter current, and high current density.

To provide an ion milling apparatus adapted to suppress the contamination of a beam forming electrode. The ion milling apparatus includes: an ion gun containing therein a beam forming electrode for forming an ion beam; a specimen holder for fixing a specimen to be processed by irradiation of an ion beam; a mask for shielding a part of the specimen from the ion beam; and an ion gun controller for controlling the ion gun.

A scanning electron microscope objective lens system is disclosed, which includes: a magnetic lens, a deflection device, a deflection control electrode, specimen to be observed, and a detection device; in which, The opening of the pole piece of the magnetic lens faces to the specimen; the deflection device is located in the magnetic lens, which includes at least one sub-deflector; the deflection control electrode is located between the detection device and the specimen, and the deflection control electrode is used to change the direction of the primary electron beam and the signal electrons generating from the specimen; the detection device comprises the first sub-detector for detecting the back-scattered electrons and the second sub-detector for detecting the second electrons. A specimen detection method is also disclosed.

A semiconductor metrology tool for analyzing a sample is disclosed. The semiconductor metrology tool includes a particle generation system, a local electrode, a particle capture device, a position detector, and a processor. The particle generation system is configured to remove a particle from a sample. The local electrode is configured to produce an attractive electric field and to direct the removed particle towards an aperture of the local electrode. The particle capture device is configured to produce a repulsive electric field around a region between the sample and the local electrode and to repel the removed particle towards the aperture. The position detector is configured to determine two-dimensional position coordinates of the removed particle and a flight time of the removed particle. The processor is configured to identify the removed particle based on the flight time.

An improved ANAB system or process substantially or fully eliminating contaminant particles from reaching a beam target by adding to the usual primary (first) ionizer of the ANAB system or process an additional (second) ionizer to ionize contaminant particles and means to block or retard the ionized particles to prevent their reaching the beam target.

An object of the present disclosure is to provide a charged particle beam apparatus that can quickly find a correction condition for a new aberration that is generated in association with beam adjustment. In order to achieve the above object, the present disclosure proposes a charged particle beam apparatus configured to include an objective lens (7) configured to focus a beam emitted from a charged particle source and irradiate a specimen, a visual field movement deflector (5 and 6) configured to deflect an arrival position of the beam with respect to the specimen, and an aberration correction unit (3 and 4) disposed between the visual field movement deflector and the charged particle source, in which the aberration correction unit is configured to suppress a change in the arrival position of the beam irradiated under different beam irradiation conditions.

Embodiments herein are directed to a resonator for an ion implanter. In some embodiments, a resonator may include a housing, and a first coil and a second coil partially disposed within the housing. Each of the first and second coils may include a first end including an opening for receiving an ion beam, and a central section extending helically about a central axis, wherein the central axis is parallel to a beamline of the ion beam, and wherein an inner side of the central section has a flattened surface.