A device for implanting particles in a substrate comprises a particle source and a particle accelerator for generating an ion beam of positively charged ions. The device also comprises a substrate holder and an energy filter, which is arranged between the particle accelerator and the substrate holder. The energy filter is a microstructured membrane with a predefined structural profile for setting a dopant depth profile and/or a defect depth profile produced in the substrate by the implantation. The device also comprises at least one passive braking element for the ion beam. The at least one passive braking element is arranged between the particle accelerator and the substrate holder and is spaced apart from the energy filter.

A method of inspecting a specimen with an array of primary charged particle beamlets in a charged particle beam device is described. The method includes generating a primary charged particle beam with a charged particle beam emitter; illuminating a multi-aperture lens plate with the primary charged particle beam to generate the array of primary charged particle beamlets; correcting a field curvature with at least two electrodes, wherein the at least two electrodes include aperture openings; directing the primary charged particle beamlets with a lens towards an objective lens; guiding the primary charged particle beamlets through a deflector array arranged within the lens; wherein the combined action of the lens and the deflector array directs the primary charged particle beamlets through a coma free point of the objective lens; and focusing the primary charged particle beamlets on separate locations on the specimen with the objective lens.

The present disclosure relates to an ion beam etching (IBE) system including a process chamber. The process chamber includes a plasma chamber configured to provide plasma. In addition, the process chamber includes an accelerator grid having multiple accelerator grid elements including a first accelerator grid element and a second accelerator grid element. A first wire is coupled to the first accelerator grid element and configured to supply a first voltage to the first accelerator grid element. A second wire is coupled to the second accelerator grid element and configured to supply a second voltage to the second accelerator grid element, where the second voltage is different from the first voltage. A first ion beam through a first hole is controlled by the first accelerator grid element, and a second ion beam through a second hole is controlled by the second accelerator grid element.

An apparatus an ion beam generator to provide an ion beam. A scanning system may receive the ion beam and provide a scanned beam. An electrode may receive the scanned beam. At least a portion of the electrode is normal to a propagation direction of the scanned beam. The portion of the electrode that is normal to the propagation direction the scan beam may have a curved shape.

A charged particle beam device includes: a charged particle source; an acceleration electric power source connected to the charged particle source for accelerating a charged particle beam emitted by the acceleration electric power source; and an objective lens for focusing the charged particle beam onto a sample, the objective lens including: a central magnetic pole having a central axis coinciding with an ideal optical axis of the charged particle beam; an upper magnetic pole; a cylindrical side-surface magnetic pole; and a disk-shaped lower magnetic pole, the central magnetic pole having an upper portion on a side of the sample and a column-shaped lower portion, the upper magnetic pole having a circular opening at a center thereof and being in a shape of a disk that is tapered to a center thereof and that is thinner at a position closer to a center of gravity of the central magnetic pole.

Methods and apparatus for modulating a particle pulse include a succession of Hermite-Gaussian optical modes that effectively construct a three-dimensional optical trap in the particle pulse's rest frame. Optical incidence angles between the propagation of the particle pulse and the optical pulse are tuned for improved compression. Particles pulses that can be modulated by these methods and apparatus include charged particles and particles with non-zero polarizability in the Rayleigh regime. Exact solutions to Maxwell's equations for first-order Hermite-Gaussian beams demonstrate single-electron pulse compression factors of more than 100 in both longitudinal and transverse dimensions. The methods and apparatus are useful in ultrafast electron imaging for both single- and multi-electron pulse compression, and as a means of circumventing temporal distortions in magnetic lenses when focusing ultra-short electron pulses.

A magnetic focusing apparatus for focusing an ion beam has a first magnet pair, a first core having a first yoke and a pair of first pole members defining a pair of first poles. A second core has a second yoke and a pair of second pole members defining a pair of second poles. A first gap separates the pairs of first and second poles. First and second coils are respectively wound around the first and second cores. The pairs of first and second poles control a focus of the ion beam along a first plane based on a current, and the pairs of first and second poles define an exit trajectory of the ion beam along a second plane downstream of the first magnet pair. The exit trajectory does not angularly deviate along the second plane from an entrance trajectory upstream of the first magnet pair.

The energy filter for use in the implantation of ions into a substrate is micropatterned for establishing, in the substrate, a dopant depth profile and/or defect depth profile brought about by the implantation, and has two or more layers or layer sections which are arranged one after another in the height direction of the energy filter. The energy filter also has a plurality of cavities each of which arranged between at least two layers or layer sections, with interior walls bounding the cavities and joining the at least two layers or layer sections to one another.

In one embodiment, an electron beam inspection apparatus includes an optical system irradiating a substrate with primary electron beams, a beam separator separating, from the primary electron beams, secondary electron beams emitted as a result of irradiating the substrate with the primary electron beams, a detector detecting the secondary electron beams separated, a movable stage on which the substrate is placed, a support base supporting the substrate on the stage, and an applying unit applying a first voltage to the substrate. The support base includes a plurality of support pins that support the substrate from below. The support pins each include a columnar insulator and a metal film disposed in the insulator. A second voltage is applied to the metal film.

This scanning electron microscope is provided with: a deceleration means that decelerates an electron beam (5) when the electron beam is passing through an objective lens; and a first detector (8) and a second detector (7) that are disposed between the electron beam and the objective lens and have a sensitive surface having an axially symmetric shape with respect to the optical axis of the electron beam. The first detector is provided at the sample side with respect to the second detector, and exclusively detects the signal electrons having a high energy that have passed through a retarding field energy filter (9A). When the distance between the tip (13) at the sample side of the objective lens and the sensitive surface of the first detector is L1 and the distance between the tip at the sample side of the objective lens and the sensitive surface of the second detector is L2, then L1/L25/9. As a result, when performing low-acceleration observation using a deceleration method by means of a scanning electron microscope, it is possible to detect signal electrons without the effect of shading in a magnification range of a low magnification on the order of hundreds of times to a high magnification of at least 100,000. Also, it is possible to highly efficiently detect backscattered electrons, of which the amount generated is less than that of secondary electrons.