Patent classifications
H01J2237/06375
Corona/Plasma Treatment Machine
A corona/plasma treatment machine includes an array of electrodes arranged in a helix along a conductive central cylinder, allowing for the efficient surface treatment of materials with greater cross-sectional heights and widths than what is conventionally possible. The corona/plasma treatment machine further includes of a high frequency, high voltage power source, a dielectric, and a contact plate. The array of electrodes is driven using a motor and rotates about its longitudinal axis and is electrically isolated from its surroundings. When power is supplied to the electrode array, electrical energy is discharged from the tips of the electrodes near the contact plate and creates a plasma corona aura formed from the ionization of the surrounding air between the electrode array and the contact plate. A conveyor is positioned below the electrode array and configured to feed material through the plasma corona aura.
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
There is provided a plasma processing apparatus comprising: a chamber where a substrate is disposed and processed by plasma generated therein; a substrate attraction portion disposed in the chamber, having therein an electrode, and configured to attract the substrate by a voltage applied to the electrode; a conductive member disposed in the chamber; and a voltage supply configured to apply a voltage to the electrode. A reference potential terminal of the voltage supply is connected to the conductive member, and the voltage supply applies a voltage having as a reference potential a potential of the conductive member to the electrode.
ELECTRON SOURCE AND CHARGED PARTICLE BEAM DEVICE
A large current electron beam is stably emitted from an electron gun of a charged particle beam device. The electron gun of the charged particle beam device includes: a SE tip 202; a suppressor 303 disposed rearward of a distal end of the SE tip; a cup-shaped extraction electrode 204 including a bottom surface and a cylindrical portion and enclosing the SE tip and the suppressor; and an insulator 208 holding the suppressor and the extraction electrode. A shield electrode 301 of a conductive metal having a cylindrical portion 302 is provided between the suppressor and the cylindrical portion of the extraction electrode. A voltage lower than a voltage of the SE tip is applied to the shield electrode.
Charged-particle source
A charged-particle source for generating a charged-particle comprises a sequence of electrodes, including an emitter electrode with an emitter surface, a counter electrode held at an electrostatic voltage with respect to the emitter electrode at a sign opposite to that of the electrically charged particles, and one or more adjustment electrodes surrounding the source space between the emitter electrode and the counter electrode. These electrodes have a basic overall rotational symmetry along a central axis, with the exception of one or more steering electrodes which is an electrode which interrupts the radial axial-symmetry of the electric potential of the source, for instance tilted or shifted to an eccentric position or orientation, configured to force unintended, secondary charged particles away from the emission surface.
Electron gun and electron beam application device
In order to provide an electron gun capable of maintaining a small spot diameter of a beam converged on a sample even when a probe current applied to the sample is increased, a magnetic field generation source 301 is provided with respect to an electron gun including: an electron source 101; an extraction electrode 102 configured to extract electrons from the electron source 101; an acceleration electrode 103 configured to accelerate the electrons extracted from the electron source 101; and a first coil 104 and a first magnetic path 201 having an opening on an electron source side, the first coil 104 and the first magnetic path 201 forming a control lens configured to converge an electron beam emitted from the acceleration electrode 103. The magnetic field generation source is provided for canceling a magnetic field, at an installation position of the electron source 101, generated by the first coil 104 and the first magnetic path 201.
REMOTE SURFACE WAVE PROPAGATION FOR SEMICONDUCTOR CHAMBERS
Apparatus provide plasma to a processing volume of a chamber. The Apparatus may comprise a plurality of plasma sources, each with at least a dielectric tube inlet which is at least partially surrounded by a conductive tube which is configured to be connected to RF power to generate plasma and a gas inlet positioned opposite the dielectric tube inlet for a process gas and a dielectric tube directly connected to each of the plurality of plasma sources where the dielectric tube is configured to at least partially contain plasma generated by the plurality of plasma sources and to release radicals generated in the plasma via holes in the dielectric tube.
Charged Particle Beam Source and Charged Particle Beam System
Provided is a charged particle beam source having an emitter that can be replaced easily. The charged particle beam source includes an electron gun chamber; a first unit including both a supportive insulative member mechanically supporting a cable and a first set of terminals electrically connected to the cable; and a second unit including both the emitter that releases charged particles and a second set of terminals electrically connected to the emitter. The chamber has a side wall provided with a through-hole in which the first unit is secured. The second unit can be detachably mounted to the first unit. Within the chamber, the emitter is placed on an optical axis, so that the first and second sets of terminals are brought into contact with each other.
METHOD OF NUCLEAR REPROGRAMMING
A method of producing an induced pluripotent stem cell, comprising the step of introducing at least one kind of non-viral expression vector incorporating at least one gene that encodes a reprogramming factor into a somatic cell. In some embodiments, the gene that encodes a reprogramming factor is one or more kind of genes selected from the group consisting of an Oct family gene, a Klf family gene, a Sox family gene, a Myc family gene, a Lin family gene, and the Nanog gene.
CHARGED PARTICLE IRRADIATING DEVICE, SYSTEM, METHOD, AND PROGRAM
A charged particle emission device includes a pre-emission state detector configured to detect a pre-emission charged state which is a charged state of a charged object before the charged particles are emitted, a learned model configured to receive a charged state of a charged object and a control parameter related to a control amount used for control of the charged particles to be emitted to the charged object to generate an estimated charged state which is a charged state of the charged object after the charged particles are controlled under the control parameter and emitted, an estimated charged state generator configured to input the pre-emission charged state and a plurality of control parameters to the learned model to generate a plurality of estimated charged states corresponding to the pre-emission charged state and the plurality of control parameters.
CHARGED PARTICLE IRRADIATING DEVICE, SYSTEM, METHOD, AND PROGRAM
A charged particle emission device includes a pre-emission state detector configured to detect a pre-emission charged state which is a charged state of the charged object before charged particles are emitted, an emission time generator configured to generate an emission time based on a past emission time of charged particles and a charged state of the charged object after the emission, emission processor circuitry configured to emit charged particles to the charged object which is in the pre-emission charged state based on the generated emission time, a post-emission state detector configured to detect a post-emission charged state which is a charged state of the charged object after the charged particles are emitted, machine learning processor circuitry configured to cause a machine learning model to learn a correspondence among the pre-emission charged state, the post-emission charged state, and the emission time generated by the emission time generator.