Provided is a method of adjusting an electron-beam irradiated area in an electron beam irradiation apparatus that deflects an electron beam with a deflector to irradiate an object with the electron beam, the method including: emitting an electron beam while changing an irradiation position on an adjustment plate by controlling the deflector in accordance with an electron beam irradiation recipe, the adjustment plate detecting a current corresponding to the emitted electron beam; acquiring a current value detected from the adjustment plate; forming image data corresponding to the acquired current value; determining whether the electron-beam irradiated area is appropriate based on the formed image data; and updating the electron beam irradiation recipe when the electron-beam irradiated area is determined not to be appropriate.

This invention provides a charged particle source, which comprises an emitter and means for generating a magnetic field distribution. The magnetic field distribution is minimum, about zero, or preferred zero at the tip of the emitter, and along the optical axis is maximum away from the tip immediately. In a preferred embodiment, the magnetic field distribution is provided by dual magnetic lens which provides an anti-symmetric magnetic field at the tip, such that magnetic field at the tip is zero.

Apparatuses and systems for stabilizing electron sources in charged particle beam inspection systems are provided. In some embodiments, a system may include an electron source comprising an emitting tip electrically connected to two electrodes and configured to emit an electron; and a base coupled to the emitting tip, wherein the base is configured to stabilize the emitting tip via the coupling.

An ion implanter is provided that includes an ion source configured to generate an ion beam and an analyzer magnet defining a chamber having a magnetic field therein. The chamber provides a curved path between a first end and a second end of the chamber. The ion source is disposed within the chamber of the analyzer magnet adjacent to the first end. The analyzer magnet is configured to bend the ion beam from the ion source within the chamber along the curved path to spatially separate one or more ion species in the ion beam while the ion source is immersed in the magnetic field of the analyzer magnet.

An ion source is provided that includes a gas source for supplying a gas, and an ionization chamber defining a longitudinal axis extending therethrough and including an exit aperture along a side wall of the ionization chamber. The ion source also includes one or more extraction electrodes at the exit aperture of the ionization chamber for extracting ions from the ionization chamber in the form of an ion beam. At least one of the extraction electrodes comprises a set of discrete rods forming a plurality of slits in the at least one extraction electrode for enabling at least one of increasing a current of the ion beam or controlling an angle of extraction of the ion beam from the ionization chamber. Each rod in the set of discrete rods is parallel to the longitudinal axis of the ionization chamber.

An apparatus includes at least one electron beam generator for generating accelerated electrons with which bulk material particles are impingeable during free fall. The electron beam generator has an annular design in which the electrons are emitted and accelerated by an annular cathode. The electrons exit from an electron outlet window in the direction of the ring axis. The annular electron beam generator is arranged in such a way that the ring axis of the electron beam generator is oriented perpendicular to, or at an angle of up to 45? from the horizontal. The apparatus may further include a device for separating bulk material particles arranged above the annular electron beam generator, the bottom wall of said device having at least one opening out of which the bulk material particles fall and, from there, fall through the ring which is formed by the electron beam generator.

A charged particle emission device includes a pre-emission state detector configured to detect a pre-emission charged state which is a charged state of a charged object before the charged particles are emitted, a learned model configured to receive a charged state of a charged object and a control parameter related to a control amount used for control of the charged particles to be emitted to the charged object to generate an estimated charged state which is a charged state of the charged object after the charged particles are controlled under the control parameter and emitted, an estimated charged state generator configured to input the pre-emission charged state and a plurality of control parameters to the learned model to generate a plurality of estimated charged states corresponding to the pre-emission charged state and the plurality of control parameters.

Embodiments of systems, devices, and methods relate to an ion beam source system. An ion source is configured to provide a negative ion beam to a tandem accelerator system downstream of the ion source, and a modulator system connected to an extraction electrode of the ion source is configured to bias the extraction electrode for a duration sufficient to maintain acceleration voltage stability of the tandem accelerator system.

Extractors and extractor systems minimize the generation of secondary electrons which interact with and degrade the primary electron beam. This can improve the performance of an electron beam system, such as a scanning electron microscope. The extractor may include a frustoconical aperture that widens as distance from the source of the electron beam increases. The entrance into the frustoconical aperture also can include a curved edge.

A substrate processing apparatus includes a chamber which has a processing room in which a substrate is processed, a cover which is provided in the processing room and is provided between the substrate and the chamber, and a heater which is provided only on the cover among the chamber and the cover and heats the cover.