Disclosed is a device for generating an organic molecular cluster ion beam, the device including a receiver configured to accommodate an organic material, a cluster generator configured to generate a cluster by supersonic expanding the organic material accommodated in the receiver at a high speed, a photo-ionizer configured to temporarily accommodate the cluster that is generated through the cluster generator, an ultraviolet (UV) light source configured to irradiate an UV pulse to the photo-ionizer to ionize the cluster, and entrance electrodes disposed at both sides of the photo-ionizer and configured to provide a potential difference to the photo-ionizer to generate a cluster ion beam.

A microscopy system includes a gas cluster beam system configured for generating a beam of gas clusters directed toward a sample to irradiate a sample and mill away successive surface layers from the sample, a scanning electron microscope system configured for irradiating the successive surface layers of the sample with an electron beam and for imaging the successive surface layers of the sample in response to the irradiation of the surface layer, and a processor configured for generating a three dimensional image of the sample based on the imaging of the successive layers of the sample.

A manufacturing system performs a deposition of an etch-compatible film over a substrate. The etch-compatible film includes a first surface and a second surface opposite to the first surface. The manufacturing system performs a partial removal of the etch-compatible film to create a surface profile on the first surface with a plurality of depths relative to the substrate. The manufacturing system performs a deposition of a second material over the profile created in the etch-compatible film. The manufacturing system performs a planarization of the second material to obtain a plurality of etch heights of the second material in accordance with the plurality of depths in the profile created in the etch-compatible film. The manufacturing system performs a lithographic patterning of a photoresist deposited over the planarized second material to obtain the plurality of etch heights and one or more duty cycles in the second material.

A method for treating a silicon substrate, and a silicon substrate, provide a surface treated with an accelerated neutral beam.

An apparatus, method and products thereof provide an accelerated neutral beam derived from an accelerated gas cluster ion beam for processing materials.

A method for Neutral Beam irradiation derived from gas cluster ion beams and articles produced thereby including optical elements.

An apparatus and method provides a drug layer formed on a surface region of a medical device, the drug layer comprised of a drug deposition and a carbonized or densified layer formed from the drug deposition by irradiation on an outer surface of the drug deposition, wherein the carbonized or densified layer does not penetrate through the drug deposition and is adapted to release drug from the drug deposition at a predetermined rate.

A method for preparing a biological material for implanting provides irradiating at least a portion of the surface of the material with an accelerated Neutral Beam.

Improvement of control of size and structure of nanoclusters with a nanocluster production apparatus is intended. Increase of an obtained amount and a yield of nanoclusters having size and structure, at least one of which is selected, is intended. A nanocluster production apparatus has a vacuum chamber, a sputtering source that generates plasma by pulse discharge, a pulse power supply that supplies a pulsed power to the sputtering source, a first inert gas supply device that supplies a first inert gas to the sputtering source, a cluster growth cell stored in the vacuum chamber and a second inert gas introduction device that introduces a second inert gas into the cluster growth cell.

A method for treating a substrate surface uses Neutral Beam irradiation derived from a gas-cluster ion-beam and articles produced thereby including lithography photomask substrates.